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Investigation on the mechanism of optical near field energy transfer in a nanophotonic integrated circuit and connection with external circuites

纳米光子集成电路中光近场能量传输机理及与外部电路连接的研究

基本信息

批准号：
14350033
负责人：
OHTSU Motoichi
金额：
$ 10.75万
依托单位：
Tokyo Institute of Technology
依托单位国家：
日本
项目类别：
Grant-in-Aid for Scientific Research (B)
财政年份：
2002
资助国家：
日本
起止时间：
2002 至 2003
项目状态：
已结题

来源：
https://kaken.nii.ac.jp/en/grant/KAKENHI-PROJECT-14350033/
关键词：
Optical near field Optical switch Pulsed light Figure of merit Waveguide Photonic integrated circuit Plasmon Etching

项目摘要

Following two subjects were carried out simultaneously in order to utilize the "nanophotonic integrated circuit" due to optical near fields as a basic device in the next-generation photonic systems.[1]Investigation on the mechanism of optical near field energy transfer in a nanophotonic integrated circuit:Using CuCl quantum dots as reference specimen, optical near fields were generated by illuminating a pulsed laser light. Operation of nanophotonic switch was confirmed due to optical near field energy transfer between three quantum dots with the size ratio of 1:√2:2. Rise-and fall-times of output signal were evaluated as 50-90ps and 1-2ns, respectively. The figure of merit of this device was confirmed to be 10-100 times larger than that of conventional photonic devices. Nanometric ZnO particles, to be used for nanophotonic devices and integrated circuits, were fabricated with high accuracies in their size and position by utilizing nonadiabatic process in optical near field chemical vap … More or deposition. That is, nanometric Zn particles with the size of 5nm was successfully fabricated to be oxidized to form nanometric ZnO particles. Further, optical near field energy transfer between ZnO were observed.[2]Connection with external circuits:Gold metallic nanowire was fixed on a wedged silicon substrate, by which a plasmon waveguide with 150nm-width was fabricated in order to transfer the TM plasmon mode. Transmission length was longer than 3μm, which was as long as the expected value. For lower loss configuration, an array of nanometric metallic particles was fixed to form a novel waveguide, by which the transmission loss was decreased to 1/10. Further, a focuser was fabricated by utilizing nanometric metallic particles in order to couple the surface plasmon to the input port of the above mentioned array. To explore the possibility of parallel operation of nanometric waveguides, a zig-zag configuration of the above mentioned array was fabricated. Transmisson loss as low as the linear configuration was confirmed experimentally.By the experimental results summarized above, possibility of using the nanophotonic integrated circuits for the next generation photonic system was confirmed. Less

本研究同时进行以下两个课题，以利用光学近场效应所产生的“奈米光子积体电路”作为下一代光子系统的基本元件。[1]纳米光子集成电路中光学近场能量传递机制的研究：以CuCl量子点为参考样品，通过照射脉冲激光产生光学近场。实验结果表明，纳米光子开关是由尺寸比为1：2：2的三个量子点之间的近场光能量传递实现的。输出信号的上升和下降时间分别为50- 90 ps和1-2ns。该器件的品质因数比传统的光子器件大10-100倍。利用光学近场化学气相沉积技术中的非绝热过程，制备了纳米光子器件和集成电路用ZnO纳米粒子， ...更多信息或者取证也就是说，成功地制备了尺寸为5 nm的纳米Zn颗粒，并将其氧化成纳米ZnO颗粒。此外，观察到ZnO之间的光学近场能量转移。[2]与外部电路的连接：将金金属纳米线固定在楔形硅衬底上，制作了宽度为150 nm的等离子体波导，用于传输TM等离子体模。透射长度大于3μm，与预期值一致。对于低损耗结构，采用纳米金属颗粒阵列固定形成新型波导，传输损耗降低到原来的1/10。此外，通过利用纳米金属颗粒制造聚焦器，以将表面等离子体激元耦合到上述阵列的输入端口。为了探索纳米波导并行操作的可能性，制作了上述阵列的锯齿形结构。实验结果表明，该结构的传输损耗可以达到线性结构的水平，从而证实了纳米光子集成电路应用于下一代光子系统的可能性。少