Investigation on the mechanism of optical near field energy transfer in a nanophotonic integrated circuit and connection with external circuites
Investigation on the mechanism of optical near field energy transfer in a nanophotonic integrated circuit and connection with external circuites
批准号:
14350033
负责人:
OHTSU Motoichi
金额:
$10.75万
依托单位国家:
日本
项目类别:
Grant-in-Aid for Scientific Research (B)
财政年份:
2002
资助国家:
日本
项目状态:
已结题
起止时间:
2002 至 2003
中文摘要
为了利用光学近场的“纳米光子集成电路”作为下一代光子系统的基本器件,同时进行了以下两项研究。纳米光子集成电路中光学近场能量传递机理的研究:以CuCl量子点为参比样品,通过脉冲激光照射产生光学近场。三个尺寸比为1:2:2的量子点之间的光近场能量传递证实了纳米光子开关的运行。输出信号的上升和下降时间分别为50-90ps和1-2ns。该器件的光能值比传统光子器件的光能值大10-100倍。利用光学近场化学蒸发或沉积的非绝热工艺,制备出了尺寸和位置精度较高的纳米ZnO粒子,用于纳米光子器件和集成电路。即成功制备出尺寸为5nm的纳米锌颗粒,并将其氧化生成纳米ZnO颗粒。进一步观察了ZnO之间的光学近场能量传递。外部电路连接:将金金属纳米线固定在楔形硅衬底上,制作宽度为150nm的等离子体波导,用于传输TM等离子体模式。透射长度大于3μm,符合期望值。为了降低损耗,我们将纳米金属粒子阵列固定成一种新型波导,使传输损耗降低到1/10。此外,为了将表面等离子体耦合到上述阵列的输入端口,利用纳米金属颗粒制作了聚焦器。为了探索纳米波导并行工作的可能性,制作了上述阵列的锯齿形结构。实验证实,传输损耗与线性结构一样低。通过上述实验结果,证实了纳米光子集成电路应用于下一代光子系统的可能性。少
英文摘要
Following two subjects were carried out simultaneously in order to utilize the "nanophotonic integrated circuit" due to optical near fields as a basic device in the next-generation photonic systems.[1]Investigation on the mechanism of optical near field energy transfer in a nanophotonic integrated circuit:Using CuCl quantum dots as reference specimen, optical near fields were generated by illuminating a pulsed laser light. Operation of nanophotonic switch was confirmed due to optical near field energy transfer between three quantum dots with the size ratio of 1:√2:2. Rise-and fall-times of output signal were evaluated as 50-90ps and 1-2ns, respectively. The figure of merit of this device was confirmed to be 10-100 times larger than that of conventional photonic devices. Nanometric ZnO particles, to be used for nanophotonic devices and integrated circuits, were fabricated with high accuracies in their size and position by utilizing nonadiabatic process in optical near field chemical vap … More or deposition. That is, nanometric Zn particles with the size of 5nm was successfully fabricated to be oxidized to form nanometric ZnO particles. Further, optical near field energy transfer between ZnO were observed.[2]Connection with external circuits:Gold metallic nanowire was fixed on a wedged silicon substrate, by which a plasmon waveguide with 150nm-width was fabricated in order to transfer the TM plasmon mode. Transmission length was longer than 3μm, which was as long as the expected value. For lower loss configuration, an array of nanometric metallic particles was fixed to form a novel waveguide, by which the transmission loss was decreased to 1/10. Further, a focuser was fabricated by utilizing nanometric metallic particles in order to couple the surface plasmon to the input port of the above mentioned array. To explore the possibility of parallel operation of nanometric waveguides, a zig-zag configuration of the above mentioned array was fabricated. Transmisson loss as low as the linear configuration was confirmed experimentally.By the experimental results summarized above, possibility of using the nanophotonic integrated circuits for the next generation photonic system was confirmed. Less
期刊论文(29)
专著(0)
科研奖励(0)
会议论文
登录
查看更多内容
大津元一: "ナノフォトニクス"電子情報通信学会誌. 85.11. 834-838 (2002)
大津元一:《纳米光子学》电子、信息和通信工程师学会杂志 85.11 (2002)。
DOI:
--
发表时间:
期刊:
影响因子:
--
作者:
[]
通讯作者:
Y.Yamamoto, M.Kourogi, M.Ohtsu, G.H.Lee, T.Kawazoe: "Lateral Integration of Zn and Al dots with Nanometer-Scale Precision by Near Field Optical Chemical Vapor Deposition Using a Sharpened Optical Fiber Probe"IEICE Transactions on Electronics. vol.E85-C, n
Y.Yamamoto、M.Kourogi、M.Ohtsu、G.H.Lee、T.Kawazoe:“使用锐化光纤探针通过近场光学化学气相沉积实现纳米级精度的锌和铝点的横向集成”IEICE Transactions on Electronics
DOI:
--
发表时间:
期刊:
影响因子:
--
作者:
[]
通讯作者:
T.Yatsui, S.Takubo, J.Lim, W.Nomura, M.Kourogi, M.Ohtsu: "Regulating the size and position of deposited Zn nanoparticles by optical near-field desorption using size-dependent resonance"Applied Physics Letters. 83・9. 1716-1718 (2003)
T. Yatsui、S. Takubo、J. Lim、W. Nomura、M. Kourogi、M. Ohtsu:“利用尺寸依赖性共振通过光学近场解吸调节沉积的 Zn 纳米粒子的尺寸和位置”《应用物理快报》。 83・9。1716-1718(2003)
DOI:
--
发表时间:
期刊:
影响因子:
--
作者:
[]
通讯作者:
S.Sangu, K.Kobayashi, T.Kawazoe, A.Shojiguchi, M.Ohtsu: "Quantum-Coherence Effect in a Quantum Dot System Coupled by Optical Near Fields"Transactions of the Materials Research Society of Japan. 28・4. 1035-1038 (2003)
S.Sangu、K.Kobayashi、T.Kawazoe、A.Shojiguchi、M.Ohtsu:“光学近场耦合的量子点系统中的量子相干效应”日本材料研究学会会刊 28・4。 -1038 (2003)
DOI:
--
发表时间:
期刊:
影响因子:
--
作者:
[]
通讯作者:
T.W.Kim, T.Kawazoe, S.Yamazaki, J.Lim, I.Yatsui, M.Ohtsu: "Room temperature ultraviolet emission from ZnO nanocrystallites fabricated by the low temperature oxidation of metallic Zn precursors"Solid State Communications. 127. 21-24 (2003)
T.W.Kim、T.Kawazoe、S.Yamazaki、J.Lim、I.Yatsui、M.Ohtsu:“金属锌前体低温氧化制备的 ZnO 纳米微晶的室温紫外线发射”固态通信。
DOI:
--
发表时间:
期刊:
影响因子:
--
作者:
[]
通讯作者:
共 15 条
Electroluminescence and its wavelength control of indirect transition-type semiconductor by dressed-photon-phonons
-
批准号:24360023
-
项目类别:Grant-in-Aid for Scientific Research (B)
-
资助金额:$12.15万
-
财政年份:2012
-
负责人:OHTSU Motoichi
-
依托单位:
Nanophotonic signal processing system based on optical near-field interactions
-
批准号:20246020
-
项目类别:Grant-in-Aid for Scientific Research (A)
-
资助金额:$32.2万
-
财政年份:2008
-
负责人:OHTSU Motoichi
-
依托单位:
Ultra-high density optical signal processing using optical near-field interactions
-
批准号:18360032
-
项目类别:Grant-in-Aid for Scientific Research (B)
-
资助金额:$11.14万
-
财政年份:2006
-
负责人:OHTSU Motoichi
-
依托单位:
Development of self-assembly method using optical near-field with nano-scale controllability in size and position
-
批准号:16360028
-
项目类别:Grant-in-Aid for Scientific Research (B)
-
资助金额:$9.6万
-
财政年份:2004
-
负责人:OHTSU Motoichi
-
依托单位:
Development of a pyramidal write-read head array for high-density optical storage by optical near field
-
批准号:12555011
-
项目类别:Grant-in-Aid for Scientific Research (B)
-
资助金额:$8.58万
-
财政年份:2000
-
负责人:OHTSU Motoichi
-
依托单位:
Study on operation of a nano-photonic integrated circuit by optical near field and deposition of semiconductor nano-patterns
-
批准号:12450029
-
项目类别:Grant-in-Aid for Scientific Research (B)
-
资助金额:$10.56万
-
财政年份:2000
-
负责人:OHTSU Motoichi
-
依托单位:
Development of nanometric photochemical vapor deposition by optical near field
-
批准号:09555096
-
项目类别:Grant-in-Aid for Scientific Research (B)
-
资助金额:$9.09万
-
财政年份:1997
-
负责人:OHTSU Motoichi
-
依托单位:
Development of ultrahigh densiti photon mode optical storage by nearfield optical technology
-
批准号:07555012
-
项目类别:Grant-in-Aid for Scientific Research (A)
-
资助金额:$7.23万
-
财政年份:1995
-
负责人:OHTSU Motoichi
-
依托单位:
Realization of nanometric optical functional devicesusing evanescentlignt localized in a subwavelendth three dimensional space
-
批准号:07455035
-
项目类别:Grant-in-Aid for Scientific Research (B)
-
资助金额:$4.8万
-
财政年份:1995
-
负责人:OHTSU Motoichi
-
依托单位:
Near-Field Optics and Its Applications
-
批准号:07044310
-
项目类别:Grant-in-Aid for International Scientific Research.
-
资助金额:$0.0万
-
财政年份:1995
-
负责人:OHTSU Motoichi
-
依托单位:
Establishments of theoretical basis of super-resolution near-field optical microscopy, spatially resolved imaging, and manipulation technology of nanometric particles
-
批准号:06302032
-
项目类别:Grant-in-Aid for Co-operative Research (A)
-
资助金额:$10.62万
-
财政年份:1994
-
负责人:OHTSU Motoichi
-
依托单位:
realization of Highly coherent and accurately frequency tunable light sources at ultraviolet region using semiconductor lasers.
-
批准号:05452110
-
项目类别:Grant-in-Aid for General Scientific Research (B)
-
资助金额:$4.42万
-
财政年份:1993
-
负责人:OHTSU Motoichi
-
依托单位:
Development of a photon scanning tunneling microscope for nondestructive measurements of bio-particles
-
批准号:05555013
-
项目类别:Grant-in-Aid for Developmental Scientific Research (B)
-
资助金额:$5.63万
-
财政年份:1993
-
负责人:OHTSU Motoichi
-
依托单位:
Realization of a manipulator by a photon scanning tunneling microscope for a single atom crystal growth
-
批准号:03452089
-
项目类别:Grant-in-Aid for General Scientific Research (B)
-
资助金额:$4.35万
-
财政年份:1991
-
负责人:OHTSU Motoichi
-
依托单位:
Realization of a highly accurate optical frequency measurement system by novel frequency chain
-
批准号:03555006
-
项目类别:Grant-in-Aid for Developmental Scientific Research (B)
-
资助金额:$10.37万
-
财政年份:1991
-
负责人:OHTSU Motoichi
-
依托单位:
Development of a Ultra-wideband Optical Sweep Generator by Using Optical Mixing of Semiconductor Lasers
-
批准号:01850015
-
项目类别:Grant-in-Aid for Developmental Scientific Research (B).
-
资助金额:$5.31万
-
财政年份:1989
-
负责人:OHTSU Motoichi
-
依托单位:
海外基金