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Development of a pyramidal write-read head array for high-density optical storage by optical near field

光近场高密度光存储金字塔读写头阵列的研制

基本信息

批准号：
12555011
负责人：
OHTSU Motoichi
金额：
$ 8.58万
依托单位：
Tokyo Institute of Technology
依托单位国家：
日本
项目类别：
Grant-in-Aid for Scientific Research (B)
财政年份：
2000
资助国家：
日本
起止时间：
2000 至 2001
项目状态：
已结题

来源：
https://kaken.nii.ac.jp/en/grant/KAKENHI-PROJECT-12555011/
关键词：
Optical near field Optical memory Tracking Deflection Solid immersion lens Storage density 光記録スライダー相変化ビットレート

项目摘要

(1) Numerical analyzes were carried out to generate a high-intensity and small-spot optical near field by using a mode interference effect. As a result, a wedge-type head was found to be superior to a pyramidal-type. Based on it, a wedge-type head was fabricated by anisotropic etching of silicon. The head of 200 nm-width and 100 micron-length was fabricated.(2) Beam deflection technique was proposed for tracking experiment. The optical near field from the head was deflected by a compact electro-optical modulator to get the deflection efficiency of 2 nm/V. It met the requirement for the tracking servo-control.(3) Using a solid immersion lens was proposed for more increase in the optical near field intensity on the head. This lens was fabricated by photo-lithography and reactive etching to realize the 1micron-height and 15 micron-diameter. Increase in the optical near field intensity was confirmed.(4) By assembling the components obtained above, head array and pads were fabricated. Write-read experiments were carried out by using a spin-stand for disk rotation. As a result, it was found that careful selection of the phase change direction of the storage media, and readout by reflection-mode were promising to realize the 1 Tb/in^2 storage density and 40 dB CNR for readout.

(1)对利用模式干涉效应产生高强度小光斑光学近场进行了数值分析。结果发现，楔形股骨头上级髋臼型股骨头。在此基础上，利用硅的各向异性腐蚀技术制作了一种楔形磁头。制作了宽200 nm、长100 μ m的头部。(2)提出了采用光束偏转技术进行跟踪实验。利用一个小型电光调制器对来自磁头的近场光进行偏转，偏转效率达到2nm/V，满足跟踪伺服控制的要求。(3)提出了使用固体浸没透镜来进一步增加头上的光学近场强度。这种透镜是通过光刻和反应刻蚀来实现的，以实现1微米的高度和15微米的直径。确认了光学近场强度的增加。(4)通过组装以上获得的部件，制造头阵列和焊盘。通过使用用于磁盘旋转的旋转架进行了写入-读取实验。结果发现，仔细选择存储介质的相变方向，并通过反射模式进行读出，有望实现1 Tb/in^2的存储密度和40 dB的读出CNR。