Study on operation of a nano-photonic integrated circuit by optical near field and deposition of semiconductor nano-patterns

光近场操作纳米光子集成电路和半导体纳米图案沉积的研究

基本信息

  • 批准号:
    12450029
  • 负责人:
  • 金额:
    $ 10.56万
  • 依托单位:
  • 依托单位国家:
    日本
  • 项目类别:
    Grant-in-Aid for Scientific Research (B)
  • 财政年份:
    2000
  • 资助国家:
    日本
  • 起止时间:
    2000 至 2001
  • 项目状态:
    已结题

项目摘要

(1) Novel optical switching device was proposed by utilizing optical near field energy transfer between different sized semiconductor quantum dots. This transfer was measured for CuCl quantum dots by using a low temperature optical near field spectroscopy. Switching time was estimated as 10 ps by our quantum mechanical theory.(2) Chemical vapor deposition by optical near field was developed to fabricate devices in the nanophotonic integrated circuit. Nano-patterns of Zn and Al were deposited. By optimizing the interaction between the depositing atom and substrate surface, minimum deposition size of 25 nm was obtained. For more improvements, technical problems to be solved were found. Non-resonant deposition not by an UV light but by a blue light was found.(3) By oxidizing Zn deposited in (2), the nano-pattern of a blue light emitting ZnO was realized. Exciton emission was observed, which exhibited a quantum-size effect when its size is smaller than 50 nm.(4) A plasmon waveguide was proposed and fabricated in order to use as an input/output terminal of the nano-photonic integrated circuit. Guiding the plasmon of 110 nm spot was observed.(5) By summarizing the results obtained above, future problems for realizing a practical nano-photonic integrated circuit was picked up.
(1)利用不同尺寸半导体量子点之间的近场光能量传递,提出了一种新型的光开关器件。通过使用低温光学近场光谱测量CuCl量子点的这种转移。根据量子力学理论,开关时间约为10 ps。(2)利用光学近场化学气相沉积技术制备纳米光子集成电路中的器件。沉积Zn和Al的纳米图案。通过优化沉积原子与衬底表面的相互作用,获得了25 nm的最小沉积尺寸。为了进一步改进,发现了需要解决的技术问题,发现了非共振沉积,而不是通过紫外光,而是通过蓝光。(3)通过氧化在(2)中沉积的Zn,实现了蓝色发光ZnO的纳米图案。观察到激子发射,当其尺寸小于50 nm时,其表现出量子尺寸效应。(4)提出并制作了一种等离子体激元波导作为纳米光子集成电路的输入/输出端。观察到110 nm光斑的引导等离子体激元。(5)通过总结以上研究结果,提出了实现实用化纳米光子集成电路需要解决的问题。

项目成果

期刊论文数量(39)
专著数量(0)
科研奖励数量(0)
会议论文数量(0)
专利数量(0)
G.H.Lee, Y.Yaniamoto, M.Kourogi, M.Ohtsu: "Blue shift in room temperature photoluminescence from photo-chemical vapor deposited ZnO films"Thin Solid Films. 386-1. 117-120 (2001)
G.H.Lee、Y.Yaniamoto、M.Kourogi、M.Ohtsu:“光化学气相沉积 ZnO 薄膜的室温光致发光蓝移”固体薄膜。
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    0
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T.Kawazoe, Y.Yamamoto, M.Ohtsu: "Fabrication of nanometric Zn dots by nonresonant Near-field optical chemical vapor deposition"Appl. Phys. Lett.. 79・8. 1184-1186 (2001)
T.Kawazoe、Y.Yamamoto、M.Ohtsu:“通过非共振近场光学化学气相沉积法制备纳米锌点”Appl. 79・8。
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    0
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T.Kawazoe, K.Kobayashi, J.Lim, Y.Narita, and M.Ohtsu: "Direct Observation of Optically-Forbidden Energy Transfer between CuCl Quantum Cubes by Optical Near-Field Spectroscopy"Phys. Rev. Lett.. 88-6. 067404(1)-067404(4) (2002)
T.Kawazoe、K.Kobayashi、J.Lim、Y.Narita 和 M.Ohtsu:“通过光学近场光谱直接观察 CuCl 量子立方体之间的光禁能量转移”Phys。
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    0
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T.Kawazoe, Y.Yamamoto, and M.Ohtsu: "Fabrication of nanometric Zn dots by nonresonant near-field optical chemical vapor deposition"Appl. Phys. Lett.. 79-8. 1184-1186 (2001)
T.Kawazoe、Y.Yamamoto 和 M.Ohtsu:“通过非共振近场光学化学气相沉积法制备纳米锌点”Appl。
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    0
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OHTSU Motoichi其他文献

OHTSU Motoichi的其他文献

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{{ truncateString('OHTSU Motoichi', 18)}}的其他基金

Electroluminescence and its wavelength control of indirect transition-type semiconductor by dressed-photon-phonons
修饰光子-声子间接跃迁型半导体的电致发光及其波长控制
  • 批准号:
    24360023
  • 财政年份:
    2012
  • 资助金额:
    $ 10.56万
  • 项目类别:
    Grant-in-Aid for Scientific Research (B)
Nanophotonic signal processing system based on optical near-field interactions
基于光学近场相互作用的纳米光子信号处理系统
  • 批准号:
    20246020
  • 财政年份:
    2008
  • 资助金额:
    $ 10.56万
  • 项目类别:
    Grant-in-Aid for Scientific Research (A)
Ultra-high density optical signal processing using optical near-field interactions
利用光学近场相互作用进行超高密度光信号处理
  • 批准号:
    18360032
  • 财政年份:
    2006
  • 资助金额:
    $ 10.56万
  • 项目类别:
    Grant-in-Aid for Scientific Research (B)
Development of self-assembly method using optical near-field with nano-scale controllability in size and position
开发利用光学近场的尺寸和位置可控的纳米级自组装方法
  • 批准号:
    16360028
  • 财政年份:
    2004
  • 资助金额:
    $ 10.56万
  • 项目类别:
    Grant-in-Aid for Scientific Research (B)
Investigation on the mechanism of optical near field energy transfer in a nanophotonic integrated circuit and connection with external circuites
纳米光子集成电路中光近场能量传输机理及与外部电路连接的研究
  • 批准号:
    14350033
  • 财政年份:
    2002
  • 资助金额:
    $ 10.56万
  • 项目类别:
    Grant-in-Aid for Scientific Research (B)
Development of a pyramidal write-read head array for high-density optical storage by optical near field
光近场高密度光存储金字塔读写头阵列的研制
  • 批准号:
    12555011
  • 财政年份:
    2000
  • 资助金额:
    $ 10.56万
  • 项目类别:
    Grant-in-Aid for Scientific Research (B)
Development of nanometric photochemical vapor deposition by optical near field
光学近场纳米光化学气相沉积研究进展
  • 批准号:
    09555096
  • 财政年份:
    1997
  • 资助金额:
    $ 10.56万
  • 项目类别:
    Grant-in-Aid for Scientific Research (B)
Development of ultrahigh densiti photon mode optical storage by nearfield optical technology
利用近场光学技术开发超高密度光子模式光存储
  • 批准号:
    07555012
  • 财政年份:
    1995
  • 资助金额:
    $ 10.56万
  • 项目类别:
    Grant-in-Aid for Scientific Research (A)
Realization of nanometric optical functional devicesusing evanescentlignt localized in a subwavelendth three dimensional space
利用局域于亚波长三维空间的倏逝光实现纳米光学功能器件
  • 批准号:
    07455035
  • 财政年份:
    1995
  • 资助金额:
    $ 10.56万
  • 项目类别:
    Grant-in-Aid for Scientific Research (B)
Near-Field Optics and Its Applications
近场光学及其应用
  • 批准号:
    07044310
  • 财政年份:
    1995
  • 资助金额:
    $ 10.56万
  • 项目类别:
    Grant-in-Aid for International Scientific Research.

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光子集成电路封装学院 (PICPAC)
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    20H02198
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使用超紧凑胶囊形金属腔结构的等离子体光子集成电路
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    16K13695
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