Development of Self Aligned Fabrication Process of High-Permittivity Gate Insulating Film for Low Consumption LSI

低功耗LSI用高介电常数栅极绝缘膜自对准制造工艺的开发

基本信息

批准号：
16360156
负责人：
NAKASHIMA Hiroshi
金额：
$ 9.92万
依托单位：
KYUSHU UNIVERSITY
依托单位国家：
日本
项目类别：
Grant-in-Aid for Scientific Research (B)
财政年份：
2004
资助国家：
日本
起止时间：
2004 至 2005
项目状态：
已结题

来源：
https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-16360156/
关键词：
Silicon High permittivity insulating film Electron cyclotron resonance plasma High-k film Silicon oxide film Low consumption LSI Hf Oxide Film 窒化膜

项目摘要

This subject aims to establish the self-aligned process for high permittivity films having the SiO_2 equivalent oxide thickness (EOT) of less than 1.0 nm, which is fabricated by the plasma oxidation, Hf metal deposition, and oxidation of Hf metal using electron cyclotron resonance (ECR) plasma and followed by the post deposition anneals by the precise control of oxygen. The target of this study is to embody the high-k film of which the leak current is four orders of magnitude lower than that of SiO_2 and also the interface property is similar to that of SiO_2. The obtained results are summarized as follows :1.1.2 nm thick SiO_2 fabrication by Ar/O_2 mixed plasma (optimum condition : O_2/Ar=0.1/30 scccm), 3 nm thick Hf metal deposition by ECR sputtering, and subsequent oxidation of Hf metal were carried out in the chamber without breaking vacuum, which was followed by rapid thermal anneal. The lowest EOT of 1.1 nm was obtained for the Hf oxidation of 8.5 min and the annealing of 650℃ fo … More r 30 s, in which the leak current density was four orders of magnitude lower than that of SiO_2. According to XPS measurements, it was found that the deposited HfO_x changes to HfO_2 and simultaneously the decrease of SiO_2 thickness and the formation of Hf silicate occur by the reaction of SiO_2 with Hf.2.In order to use the TaN film for the gate metal of MOSFET, the TaN film was deposited by magnetron sputtering and optimized by the subsequent annealing. It was found that the TaN film enable us to use the processing at temperatures less than 750℃ in MOSFET fabrication. The etching of the TaN film was successfully established by the wet chemical etching with the Hf metal mask, leading to the MOSFET fabrication having channel length of 5 μm.3.The fabrication process for metal-gate/high-k/Si-MOSFET was well established, which was employed TaN as metal gate and Hf oxide as high-k insulating film. The MOSFET showed the 40% increment of the performance, compared with that of SiO_2 having the same physical thickness as high-k film. Less

该主题旨在建立具有小于1.0 nm的SIO_2等效氧化物厚度（EOT）的高介电常数膜的自我对准过程，该过程是由血浆氧化，HF金属沉积，HF金属沉积和使用电子环体共振（ECR）血浆质量氧化（ECR）血浆和氧化后的氧化剂氧化而制造的。这项研究的目标是体现泄漏电流比SIO_2低的四个数量级的高K膜，并且界面属性与SIO_2相似。所获得的结果总结如下：1.1.2 nm厚的SIO_2通过AR/O_2混合血浆（最佳状态：O_2/AR = 0.1/30 SCCCM），3 nm厚的HF金属通过ECR溅射进行3 nm厚的HF金属沉积，而HF金属在室内的氧化和随后的氧化无需破裂，而无需破裂，随后是快速的，随后是热量的，随后是在其上进行热量的，并随后均可携带。获得了8.5分钟的HF氧化和650 r 30 s的退火，获得了1.1 nm的最低EOT，其中泄漏电流密度比SIO_2低四个数量级。根据XPS的测量结果，发现沉积的HFO_X变化对HFO_2，仅仅是SIO_2厚度的减小，而HF硅酮的形成是通过Sio_2与HF.2的反应发生的。发现棕褐色的膜使我们能够在MOSFET制造中使用小于750℃的加工。用HF金属面膜湿化学蚀刻成功地建立了棕褐色膜的蚀刻，从而导致MOSFET制造的通道长度为5μm。3。金属/高k/si-mosfet的制造过程已建立得很好，用作金属门和HF氧化物作为金属氧化物，作为高k绝缘膜。与SIO_2相同的物理厚度与High-K膜相同，MOSFET显示出40％的性能增量。较少的

项目成果

期刊论文数量（13）

专著数量（0）

科研奖励数量（0）

会议论文数量（0）

专利数量（0）

Electrical characterization of high-k gate dielectrics fabricated using plasma oxidation and post deposition annealing of Hf/SiO_2/Si Structure

使用 Hf/SiO_2/Si 结构的等离子体氧化和沉积后退火制造的高 k 栅极电介质的电学特性

DOI：
发表时间：
2006
期刊：
Abstract of European Materials Research Society 2006 Spring Meeting E-MRS (in press)
影响因子：
0
作者：
Y.Sugimoto;H.Adachi;K.Yamamoto;D.Wang;H.Nakashima;H.Nakashima
通讯作者：
H.Nakashima

Low-Temperature Fabrication of Polycrystalline Si Thin Film Using Al-Induced Crystallization without Native Al Oxide at Amorphous Si/Al Interface

DOI：
10.1143/jjap.44.4770
发表时间：
2005-07
期刊：
Japanese Journal of Applied Physics
影响因子：
1.5
作者：
Y. Sugimoto;N. Takata;Takeshi Hirota;K. Ikeda;F. Yoshida;H. Nakashima;H. Nakashima
通讯作者：
Y. Sugimoto;N. Takata;Takeshi Hirota;K. Ikeda;F. Yoshida;H. Nakashima;H. Nakashima

Optimization of Ar-diluted N_2 electron cyclotron resonance plasma for high-quality SiN film growth at low temperature

低温高质量SiN薄膜Ar稀释N_2电子回旋共振等离子体优化