Low Temperature Fabrication of High-Permittivity Gate Insulating Film and Its Functional Evaluation for Next Generation LSI.

高介电常数栅极绝缘膜的低温制造及其对下一代LSI的功能评估。

基本信息

批准号：
13450130
负责人：
NAKASHIMA Hiroshi
金额：
$ 7.36万
依托单位：
Kyushu University
依托单位国家：
日本
项目类别：
Grant-in-Aid for Scientific Research (B)
财政年份：
2001
资助国家：
日本
起止时间：
2001 至 2003
项目状态：
已结题

项目摘要

This subject aims to establish the process for the stacked structure having the SiO_2 equivalent oxide thickness(BOT) of less than 2.0nm by the plasma oxidation and nitridation using electron cyclotron resonance(ECR) plasma and by the ECR-sputtering of ZrO_2. In order to do that, We investigated the effects of gas flow rate and substrate bias on the structural and electrical properties of SiO_2,SiN,and ZrO_2 thin, films, and clarified the growth mechanism. The obtained results are summarized as follows :(1)The Kr gas is better than Ar to dilute the O_2 plasma for Si oxidation according to the current-voltage characteristics of the Si oxide film. Under the optimum condition, the as-grown Si oxide film at 130℃ shows breakdown electric field of 10-12MV/cm and interface states density of 3.2×10^<10> eV^<-1>cm^<-2>.(2)The nitrogen partial pressure has decisive effect on the film quality. A Si nitride film having a structure nearest to stoichiometric construction is obtained by precise control of N_2 mixing ratio at 60%. Under this optimum condition, SiN film grown at 400℃, having EOT of 2.46nm, shows a leakage current more than two orders of magnitude lower than that of thermal grown SiO_2 having the same EOT.(3)SiN film was deposited Al and then annealed at 450℃ for 30min after SiN growth by using method (2). EOT of the SiN film decreased up to 1.8nm, and the leak current and interface states density were decreased remarkably.(4)The electrical properties of the deposited ZrO_2 films were very sensitiye to the O_2 flow rate and the dielectric breakdown field of 3-5 MV/cm was achieved under the optimum condition. The permittivity was 20.5 and an interfacial Si oxide layer was 2.3nm.(5)The EOT having 1.8nm was achieved by using the stack structure of ZrO_2/SiN/Si, which shows a leakage current more than three orders of magnitude lower than that of thermal grown SiO_2 having the same EOT.

该主题旨在通过使用电子环状共振（ECR）等离子体（ECR）等离子体和硝化来建立具有小于2.0nm的SIO_2等效氧化物厚度（BOT）的堆叠结构的过程。为此，我们研究了气体流量和底物偏置对SIO_2，SIN和ZRO_2薄薄膜结构和电气性能的影响，并阐明了生长机制。所获得的结果总结如下：（1）KR气体比AR更好，可以根据SI氧化物膜的电流 - 电压特性稀释O_2等离子体进行SI氧化。在最佳条件下，在130℃处生长的Si氧化物膜显示出10-12mV/cm的击穿电场，界面状态密度为3.2×10^<10> eV^<-1> cm^<-2>。（2）氮的部分压力是由60％的结构构造的nitride膜，确定了n硝基的构造，该二硝基均通过60％的构建为单位。在这种最佳条件下，在400℃下生长的sin膜，EOT为2.46nm，显示出比具有相同eot的热生长的SiO_2低两个以上的数量级。（3）SIN膜沉积Al，然后在使用方法生长后，在450℃下在450℃下在450℃下退火30分钟（2）。 SIN膜的EOT降低到1.8nm，泄漏电流和界面状态密度显着降低。（4）在最佳条件下，沉积的Zro_2膜的电性能非常敏感，并且在最佳条件下实现了3-5 mV/cm的饮食分解场。介电常数为20.5，界面的Si氧化物层为2.3nm。（5）通过使用Zro_2/sin/si的堆栈结构来实现具有1.8nm的EOT，该结构显示出泄漏电流的泄漏电流超过三个数量级，比Thermal Grown Grown Grown sio_2的eot具有相同的EOT。