Development of plasma synthesis technology for advanced complex compound materials based on mass-selective momentum control

基于质量选择动量控制的先进复杂复合材料等离子体合成技术发展

• 批准号: 16360356
• 负责人: SATO Naoyuki
• 金额: $ 9.66万
• 依托单位: Ibaraki University
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for Scientific Research (B)
• 财政年份: 2004
• 资助国家: 日本
• 起止时间: 2004 至 2006
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-16360356/
• 关键词: plasma processing; transparent conductive film; ponderomotive force; stoichiometry control; momentum control; orientation control; oxygen plasma; zinc vaporization; 透明導電膜; 亜鉛蒸発

We have developed the experimental apparatus of new plasma processing oriented to the advanced functional oxide compounds such as ZnO film, applying the mass-selective momentum control based on the ponderomotive force on the magnetized ions. The ponderomotive potential generated by the localized rf electric field with the frequency ω is superimposed on the collision-less sheath of the sample substrate. Then the composition and crystal orientation of ZnO are expected to be controlled just before the substrate by varying ω near the cyclotron frequency Ω_o (or Ω_<zn>) and Ω_o (orΩ_<zn>)-ω, respectively. Although the oxide dominates the carrier concentration and is very sensitive for process pressure and temperature, this new way could draw more the theoretical properties of the oxide compounds than the conventional sputtering type.The flux depression of oxygen ion upon the substrate has been demonstrated accompanying with the ponderomotive effect on the magnetized reactive molecular ion. … More This phenomenon connecting to mass-selective momentum control is applied to synthesis the ZnO transparent conductive film with lower resistivity comparable to the Indium based film. The enhancement of ponderomotive force, being necessary for high selectivity of cyclotron ion's species, is expected to appear by decelerating ion's initial velocity proportional to the square root of electron temperature in a plasma. To confirm this expectation even in a plasma, we have prepared the low-temperature plasma extracted from ECR oxygen plasma around a pressure of 10^<-2> Pa and investigated the enhancement effect of the ponderomotive force against electron temperature.The mixture plasma source is developed by evaporating zinc into ECR oxygen plasma confined by the axial magnetic field. The O^+, O_2^+, and Zn^+ exist in our plasma at a low pressure of 10^<-2> Pa when oven temperature exceeds around 400℃. The vapor source can move 3-dimensionally, searching the more proper deposition geometry with in-situ mass-spectroscopy and/or film thickness measurement. The resistivity measurement of ZnO transparent conductive film has been performed during the deposition.It is found that the resistivity of film with 〜 100 nm thickness decreases until 〜 10^<-4>Ωcm when ω approaches to the cyclotron frequency for the singly charged oxygen molecular. This phenomenon is considered to be attributed to the reflection of the oxygen molecular ion due to the ponderomotive force. Less

针对氧化锌薄膜等先进功能氧化物材料，采用磁化离子有质动力的质量选择动量控制，研制了新型等离子体处理实验装置。由频率为ω的局域射频电场产生的有质动势叠加在样品衬底的无碰撞鞘上。然后在衬底之前通过改变ω分别在回旋频率Ω_o(或Ω_&lt；zn&gt；)和Ω_o(或Ω_&lt；zn&gt；)-ω附近控制氧化锌的成分和晶体取向。尽管氧化物控制载流子浓度，对工艺压力和温度非常敏感，但这种新方法比传统的溅射方式更能得出氧化物化合物的理论性质。氧离子在衬底上的通量抑制伴随着对磁化反应分子离子的有质动力效应。…并将这一现象与质量选择动量控制相结合，用于合成电阻率可与铟基膜相当的氧化锌透明导电膜。回旋离子物种的高选择性所必需的有质动力的增强，预计将通过降低离子在等离子体中的初始速度，与电子温度的平方根成正比而出现。为了证实这一预期，即使在等离子体中，我们也制备了从ECR氧等离子体中提取的、气压为10^&lt；-2&gt；Pa的低温等离子体，并研究了有质动力对电子温度的增强效应。当烘箱温度超过400℃左右时，在10^&lt；-2&gt；Pa.的低气压下，我们的等离子体中存在O^+、O_2^+和Zn^+。蒸汽源可以三维移动，通过原位质谱学和/或薄膜厚度测量来寻找更合适的沉积几何形状。在沉积过程中对氧化锌透明导电膜的电阻率进行了测量，发现当Ω接近单电荷氧分子的回旋频率时，厚度约为100 nm的氧化锌透明导电膜的电阻率下降到~10^&lt；-4&gt；ωcm。这一现象被认为归因于有质动力对氧分子离子的反射。较少

项目成果

The flux control of ion incident upon the substrate in oxygen plasma for ZnO film synthesis based on mass-selective momentum control

基于质量选择动量控制的氧等离子体中入射到基板上的离子通量控制用于 ZnO 薄膜合成

• 发表时间: 2006
• 期刊: Proceeding of the 6^<th> International Conference on Reactive Plasmas and 23^<rd> Symposium on Plasma Processing AP061201・P-1A-06
• 作者: N.Y;Sato・K;Kinoshita・Y;Nakano・T;Ikehata・S;Yamauchi・J;Oonuki
• 通讯作者: Oonuki

動重力効果を利用したイオンの選択的運動量制御によるZnO薄膜合成の実験準備

利用动态重力效应选择性动量控制离子合成 ZnO 薄膜的实验准备

• 发表时间: 2004
• 期刊: 電気学会プラズマ研究会資料 PST-04-28
• 作者: Yasushi Nakano;Naoyuki Sato;Takashi Ikehata;Satoshi Yamauchi;Jin Oonuki;佐藤直幸・中野恭嗣・池畑 隆・山内 智・大貫 仁
• 通讯作者: 佐藤直幸・中野恭嗣・池畑 隆・山内 智・大貫 仁

質量選択的運動量制御に向けた亜鉛・酸素混合プラズマ中の透明導電膜合成

锌氧混合等离子体中合成透明导电薄膜用于质量选择动量控制

• 发表时间: 2008
• 期刊: 電気学会プラズマ研究会資料 PST-08-13
• 作者: H.Murakami;T.Yano;S.Sodeoka;村上秀之(分担);山本祐輝;橋本麻由;野中脩平;Yuki Yamamoto;Mayu Hashimoto;Shuhei Nonaka;橋本麻由;野中脩平;Il-Doo Kim;稗田耕士;Avner Rothschild;Seiichiro Itami;Koji Hieda;兵頭健生;Seiichiro Itami;Takeo Hyodo;Koji Hieda;Avner Rothschild;Seiichiro Itami;Koji Hieda;Takeo Hyodo;稗田耕士;Avner Rothschild;Seiichiro Itami;Koji Hieda;兵頭健生;Seiichiro Itami;Takeo Hyodo;II-Doo Kim;Takeo Hyodo;Yasuhiro Shimizu;伊丹誠一郎;Takeo Hyodo;Yasuhiro Shimizu;Huankiat Seh;Yasuhiro Shimizu;柴田浩希;Takeo Hyodo;Yasuhiro Shimizu;Seiichiro Itami;Takeo Hyodo;Makoto Egashira;Yasuhiro Shimizu;Seiichiro Itami;Huankiat Seh;Yasuhiro Shimizu;Hiroki Shibata;Takeo Hyodo;Yasuhiro Shimizu;Huankiat Seh;Takeo Hyodo;Takako Ishibashi;Harry L.Tuller;Makoto Egashira;Yasuhiro Shimizu;Takeo Hyodo;Yasuhiro Shimizu;Seiichiro Itami;伊丹誠一郎;Takeo Hyodo;Yasuhiro Shimizu;Yasuhiro Shimizu;Huankiat Seh;Takeo Hyodo;Takako Ishibashi;Yasuhiro Shimizu;大宅修平;Takeo Hyodo;Huankiat Seh;Yasuhiro Shimizu;Shuhei Ohya;Takeo Hyodo;Yasuhiro Shimizu;Yasuhiro Shimizu;Yasuhiro Shimizu;Yasuhiro Shimizu;Yasuhiro Shimizu;佐藤直幸・薮内祐二・菅谷聡一・池畑 隆・山内 智・大貫 仁;佐藤直幸・小松良寛・池畑 隆・山内 智・大貫 仁
• 通讯作者: 佐藤直幸・小松良寛・池畑 隆・山内 智・大貫 仁

Voltage-current characteristics of the magnetized oxygen plasma for oxide film synthesis based on mass-selective momentum control

基于质量选择动量控制的氧化膜合成磁化氧等离子体的电压-电流特性

• 发表时间: 2005
• 作者: Y. Nakano. N. Y. Sato. T. Ikehata;S. Yamauchi&J. Oonuki
• 通讯作者: S. Yamauchi&J. Oonuki

Production of low temperature plasma under low pressure for complex compound synthesis by mass-selective momentum control

通过质量选择动量控制在低压下产生用于复杂化合物合成的低温等离子体

• 作者: Naoyuki Sato;Kousuke Kinoshita;Takashi Ikehata;Satoshi Yamauchi
• 通讯作者: Satoshi Yamauchi