Mechanical and electronic measurements based on scanning probe microscopy for single molecules on surfaces using electron resonant interaction

基于扫描探针显微镜，利用电子共振相互作用对表面上的单分子进行机械和电子测量

• 批准号: 17310069
• 负责人: ARAI Toyoko
• 金额: $ 9.32万
• 依托单位: Kanazawa University (2007)University of Tsukuba (2005-2006)
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for Scientific Research (B)
• 财政年份: 2005
• 资助国家: 日本
• 起止时间: 2005 至 2007
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-17310069/
• 关键词: scanning probe microscopy; interaction force; nano material; chemical bonding; surface and interface; non-contact atomic force microscopy; ナノ力学分光; 表面局在相互作用分光法; 電圧印加非接触原子間力分光法

The purpose of this study is to analyze the structures, binding states and electronic states of functional single molecules with potential for opto-electronic devices fabricated on solid surfaces by bias-voltage non-contact atomic force spectroscopy (bias nc-AFS), invented by ourselves. The bias nc-AFS is a nanomechanical spectroscopy based on scanning probe microscopy (SPM). Our aim is also to establish this method to evaluate nano-structures using the energy shift of Fermi level induced by applying and sweeping the bias voltage between a tip and a sample.Here we developed ultra-high vacuum (UHV) bias nc-AFM/S together with improvement of the method, and aimed at developing of force sensors based on a commercial quartz tuning fork. In addition, we experimentally designed and fabricated a bending type and a stretching type of quartz force sensors in cooperation with a group in Tohoku University.Furthermore, we grew Ge clusters on a clean Si tip as a functionalized AFM tip. The clusters have specified facetted structures owing to a strained growth with lattice mismatch. Then the corner surrounded with the facets becomes sharper that is applicable to a well-defined scanning tip. We tried to obtain AFM images with it using a commercial AFM. Consequently, the spatial resolution was improved by using the Ge cluster tip compared with that using an uncovered Si tip. After wearing the tip we heated the worn Ge cluster tip in UHV, resulting in resharpening the tip apex with remolding a Ge cluster. Since the facet structure of a Ge cluster on Si is very stable, we resharpened it many times by heating, implying that we acquire a way to reproduce a tip having the same electronic states on the tip apex.We deposited it -conjugated molecules of 4,4"-diamino-p-terphenyl (DAT) on Si(111)7x7 in UHV, and examined their adsorption states using SPM.

本研究的目的是利用自行研制的偏置电压非接触原子力光谱仪（bias-voltage non-contact atomic force spectroscopy，bias-nc-AFS）分析固体表面上具有光电器件潜力的功能单分子的结构、结合态和电子态。偏置nc-AFS是一种基于扫描探针显微镜（SPM）的纳米力学光谱。我们的目标也是建立这种方法来评估纳米结构使用费米能级的能量偏移所引起的施加和扫描之间的一个针尖和sample. In这里，我们开发了超高真空（UHV）偏置nc-AFM/S连同改进的方法，并旨在开发基于商业石英音叉的力传感器。此外，我们与东北大学的研究小组合作，实验设计并制作了弯曲型和拉伸型石英力传感器。此外，我们还在洁净的Si针尖上生长了Ge团簇，作为功能化AFM针尖。团簇具有特定的小面结构，由于应变生长与晶格失配。然后，由小平面包围的拐角变得更尖锐，这适用于明确定义的扫描尖端。我们尝试使用商业AFM获得AFM图像。因此，与未覆盖的硅针尖相比，使用Ge团簇针尖的空间分辨率得到了提高。在针尖磨损后，我们在UHV中加热磨损的Ge团簇针尖，导致针尖顶端重新锐化，重塑Ge团簇。由于Ge团簇在Si（111）7 × 7上的小面结构非常稳定，我们通过多次加热使其重新锐化，从而获得了一种在针尖顶端具有相同电子态的针尖的方法.

项目成果

「シリコン基板に直接結合したπ共役系分子の形成」

“直接键合到硅基板上的 π 共轭分子的形成”

• 发表时间: 2007
• 作者: H. Sasakura ;et. al.;板橋敦
• 通讯作者: 板橋敦

表面物性工学ハンドブック 第2版 第6章 SPM 6.2STM 6.2.2 装置と測定法、6.2.3 観察例1

表面性能工程手册第二版第6章SPM 6.2STM 6.2.2设备和测量方法，6.2.3观察示例1

• 发表时间: 2007
• 作者: S. Furukawa ;et. al.;富取 正彦;H. Kumano;新井 豊子;R. Kaji;S. Adachi;富取 正彦;H. Sasakura;富取 正彦;R. Kaji;富取 正彦
• 通讯作者: 富取 正彦

「実践ナノテクノロジー・走査プローブ顕微鏡と局所分光」第3章 各種分光法の基礎と応用 3・2 力学的分光 3・2・4 散逸(非保存力)

《实用纳米技术：扫描探针显微镜和局域光谱》第3章各种光谱方法的基础和应用3.2动态光谱3.2.4耗散（非保守力）

• 发表时间: 2005
• 作者: 富取正彦;新井豊子(分担執筆)
• 通讯作者: 新井豊子(分担執筆)

"Investigation of organic molecules by frequency modulation atomic force microscopy in air or liquid"

“通过调频原子力显微镜研究空气或液体中的有机分子”

• 发表时间: 2007
• 作者: H. Kobayashi ;et. al..;H. Tsuneishi;M. Ohta
• 通讯作者: M. Ohta

Energy Spectra of Electrons Backscattered from Sample Surfaces with Heterostructures using Field-Emission Scanning Tunneling Microscopy

• DOI: 10.1143/jjap.45.2278
• 发表时间: 2006-03
• 期刊: Japanese Journal of Applied Physics
• 影响因子: 1.5
• 作者: M. Hirade;T. Arai;M. Tomitori