Mechanical and electronic measurements based on scanning probe microscopy for single molecules on surfaces using electron resonant interaction
Mechanical and electronic measurements based on scanning probe microscopy for single molecules on surfaces using electron resonant interaction
批准号:
17310069
负责人:
ARAI Toyoko
金额:
$9.32万
依托单位国家:
日本
项目类别:
Grant-in-Aid for Scientific Research (B)
财政年份:
2005
资助国家:
日本
项目状态:
已结题
起止时间:
2005 至 2007
中文摘要
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英文摘要
The purpose of this study is to analyze the structures, binding states and electronic states of functional single molecules with potential for opto-electronic devices fabricated on solid surfaces by bias-voltage non-contact atomic force spectroscopy (bias nc-AFS), invented by ourselves. The bias nc-AFS is a nanomechanical spectroscopy based on scanning probe microscopy (SPM). Our aim is also to establish this method to evaluate nano-structures using the energy shift of Fermi level induced by applying and sweeping the bias voltage between a tip and a sample.Here we developed ultra-high vacuum (UHV) bias nc-AFM/S together with improvement of the method, and aimed at developing of force sensors based on a commercial quartz tuning fork. In addition, we experimentally designed and fabricated a bending type and a stretching type of quartz force sensors in cooperation with a group in Tohoku University.Furthermore, we grew Ge clusters on a clean Si tip as a functionalized AFM tip. The clusters have specified facetted structures owing to a strained growth with lattice mismatch. Then the corner surrounded with the facets becomes sharper that is applicable to a well-defined scanning tip. We tried to obtain AFM images with it using a commercial AFM. Consequently, the spatial resolution was improved by using the Ge cluster tip compared with that using an uncovered Si tip. After wearing the tip we heated the worn Ge cluster tip in UHV, resulting in resharpening the tip apex with remolding a Ge cluster. Since the facet structure of a Ge cluster on Si is very stable, we resharpened it many times by heating, implying that we acquire a way to reproduce a tip having the same electronic states on the tip apex.We deposited it -conjugated molecules of 4,4"-diamino-p-terphenyl (DAT) on Si(111)7x7 in UHV, and examined their adsorption states using SPM.
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「シリコン基板に直接結合したπ共役系分子の形成」
“直接键合到硅基板上的 π 共轭分子的形成”
DOI:
--
发表时间:
2007
期刊:
影响因子:
--
作者:
[H. Sasakura , et. al., 板橋敦]
通讯作者:
板橋敦
表面物性工学ハンドブック 第2版 第6章 SPM 6.2STM 6.2.2 装置と測定法、6.2.3 観察例1
表面性能工程手册第二版第6章SPM 6.2STM 6.2.2设备和测量方法,6.2.3观察示例1
DOI:
--
发表时间:
2007
期刊:
影响因子:
--
作者:
[S. Furukawa , et. al., 富取 正彦, H. Kumano, 新井 豊子, R. Kaji, S. Adachi, 富取 正彦, H. Sasakura, 富取 正彦, R. Kaji, 富取 正彦]
通讯作者:
富取 正彦
「実践ナノテクノロジー・走査プローブ顕微鏡と局所分光」第3章 各種分光法の基礎と応用 3・2 力学的分光 3・2・4 散逸(非保存力)
《实用纳米技术:扫描探针显微镜和局域光谱》第3章各种光谱方法的基础和应用3.2动态光谱3.2.4耗散(非保守力)
DOI:
--
发表时间:
2005
期刊:
影响因子:
--
作者:
[富取正彦, 新井豊子(分担執筆)]
通讯作者:
新井豊子(分担執筆)
"Investigation of organic molecules by frequency modulation atomic force microscopy in air or liquid"
“通过调频原子力显微镜研究空气或液体中的有机分子”
DOI:
--
发表时间:
2007
期刊:
影响因子:
--
作者:
[H. Kobayashi , et. al.., H. Tsuneishi, M. Ohta]
通讯作者:
M. Ohta
DOI:
10.1143/jjap.45.2278
发表时间:
2006-03
期刊:
Japanese Journal of Applied Physics
影响因子:
1.5
作者:
[M. Hirade;T. Arai;M. Tomitori]
通讯作者:
M. Hirade;T. Arai;M. Tomitori
共 63 条
Investigation of Hydrogen Bond by Bias Noncontact Atomic Force Microscopy/Spectroscopy
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批准号:26600098
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项目类别:Grant-in-Aid for Challenging Exploratory Research
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资助金额:$2.5万
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财政年份:2014
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负责人:ARAI Toyoko
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依托单位:
Scanning probe microscopy analysis of the changes in force and electric current with the collapse of tunneling barrier between two bodies at closer separation
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批准号:24340068
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项目类别:Grant-in-Aid for Scientific Research (B)
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资助金额:$12.65万
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财政年份:2012
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负责人:ARAI Toyoko
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依托单位:
Atomic force spectroscopy of chemical bonding process with bias voltage tuning between a tip and a sample
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批准号:20310058
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项目类别:Grant-in-Aid for Scientific Research (B)
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资助金额:$11.98万
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财政年份:2008
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负责人:ARAI Toyoko
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依托单位:
Analysis of surface electronic states based on the characteristics of surface interaction forces by atomic force microscopy
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批准号:12650027
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项目类别:Grant-in-Aid for Scientific Research (C)
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资助金额:$2.18万
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财政年份:2000
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负责人:ARAI Toyoko
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依托单位:
海外基金