Control of spin motion in DOS-controlled single-wailed carbon nanotubes
DOS控制的单壁碳纳米管中自旋运动的控制
基本信息
- 批准号:17310060
- 负责人:
- 金额:$ 9.74万
- 依托单位:
- 依托单位国家:日本
- 项目类别:Grant-in-Aid for Scientific Research (B)
- 财政年份:2005
- 资助国家:日本
- 起止时间:2005 至 2007
- 项目状态:已结题
- 来源:
- 关键词:
项目摘要
The purpose of this study is (1) stable control of density of states (DOS) in single-walled carbon nanotubes (SWNTs) in order to control injected carriers, (2) injection of polarized spins into DOS-controlled SWNTs. In order to achieve these two purposes, we have set 3 important milestones, that is, (a) increase of carrier injection efficiency in SWNT-based field effect transistors, (b) band engineering of SWNTs as a channel layer in FETs by carrier doping (c) spin injection into such SWNTs from ferromagnetic electrodes. Concerning the milestone (a) and (b), we have succeeded in fabricating SWNT-FETs with high performance and also polarity controlled SWNT-FETs using Tetracyano-p-quinodimethane (TCNQ) and polyethireneimine. Concerning the milestone (c), first we fabricated single-electron transistors using SWNT and estimated scattering length of injected carriers (electron and hole) to be 200-300 nm. Next we replaced electrodes from non-magnet to ferromagnet in order to achieve spin injection. In addition, we newly introduced a non-local 4-terminal magnetoresistance measurement method for obtaining reliable results. As a result, we have observed hysteresis in resistance in SWNT spin valve with 4 electrodes at 3.8 K. The spin coherent length was estimated to be about 90 nm.
本研究的目的是(1)稳定地控制单壁碳纳米管(SWNTs)的态密度(DOS)以控制注入的载流子,(2)在DOS控制的SWNTs中注入极化自旋。为了实现这两个目的,我们设定了3个重要的里程碑,即(a)提高基于SWNT的场效应晶体管中的载流子注入效率,(B)通过载流子掺杂将SWNT作为FET中的沟道层进行能带工程,(c)从铁磁电极将自旋注入到这样的SWNT中。关于里程碑(a)和(B),我们已经成功地制造了具有高性能的SWNT-FET以及使用四氰基对醌二甲烷(TCNQ)和聚噻吩亚胺的极性控制的SWNT-FET。关于里程碑(c),首先,我们使用SWNT制造单电子晶体管,并估计注入载流子(电子和空穴)的散射长度为200-300 nm。接下来,我们将电极从非磁体替换为铁磁体,以实现自旋注入。此外,我们新引入了一种非局部四端磁阻测量方法,以获得可靠的结果。结果表明,在3.8K时,我们观察到了四电极单壁碳纳米管自旋阀的电阻滞后现象。自旋相干长度估计为约90 nm。
项目成果
期刊论文数量(0)
专著数量(0)
科研奖励数量(0)
会议论文数量(0)
专利数量(0)
Ambipolar single electron transistors side-contacted single-walled carbon nanotubes
双极单电子晶体管侧接触单壁碳纳米管
- DOI:
- 发表时间:2005
- 期刊:
- 影响因子:0
- 作者:K.Matsuoka;et al.
- 通讯作者:et al.
Surface potential analyses of single-walled carbon nanotube/metal interface
单壁碳纳米管/金属界面的表面电位分析
- DOI:
- 发表时间:2007
- 期刊:
- 影响因子:0
- 作者:M. Shiraishi;K. Takebe;K. Saito;N. Toda and H. Kataura
- 通讯作者:N. Toda and H. Kataura
An investigation of spin current in single-walled carbon nanotubes
单壁碳纳米管中自旋电流的研究
- DOI:
- 发表时间:2007
- 期刊:
- 影响因子:0
- 作者:M. Shiraishi;et. al.
- 通讯作者:et. al.
Non-local 4-terminal magnetoresistance measurement in SWNTs
单壁碳纳米管中的非局部四端磁阻测量
- DOI:
- 发表时间:2007
- 期刊:
- 影响因子:0
- 作者:M.;Shiraishi
- 通讯作者:Shiraishi
Recent progress in random-network single-walled carbon nanotube transistors(総合報告)
随机网络单壁碳纳米管晶体管的最新进展(综合报告)
- DOI:
- 发表时间:
- 期刊:
- 影响因子:0
- 作者:M.Shiraishi;et al.
- 通讯作者:et al.
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SHIRAISHI Masashi其他文献
SHIRAISHI Masashi的其他文献
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{{ truncateString('SHIRAISHI Masashi', 18)}}的其他基金
Detection of pure spin current in topological insultors by using the inverse spin Hall effect
利用逆自旋霍尔效应检测拓扑绝缘体中的纯自旋电流
- 批准号:
25600076 - 财政年份:2013
- 资助金额:
$ 9.74万 - 项目类别:
Grant-in-Aid for Challenging Exploratory Research
Spin pumping into molecular single crystal
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Measurement of spin transport properties and spin coherence in molecular semiconductors
分子半导体中自旋输运特性和自旋相干性的测量
- 批准号:
22360008 - 财政年份:2010
- 资助金额:
$ 9.74万 - 项目类别:
Grant-in-Aid for Scientific Research (B)
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