Controling of the atom-scale metallic low-dimensional structures and infrared response

原子级金属低维结构和红外响应的控制

• 批准号: 18310083
• 负责人: NAGAO Tadaaki
• 金额: $ 10.76万
• 依托单位: National Institute for Materials Science
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for Scientific Research (B)
• 财政年份: 2006
• 资助国家: 日本
• 起止时间: 2006 至 2007
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-18310083/
• 关键词: Infrared absorption spectroscopy; plasmon; sensors; nanoparticles; atom wires; EELS; Metal-insulator transition; 金属原子鎖; 金属ナノ粒子; 電子回折; 電子分光; 赤外吸収

The aim of the project was to develop a new methodology for the measurement and application of low-dimensional-type plasmons confined in atomic- scale tiny metallic objects via realizing artificial and selforganizing processes which are controlled with atomic-scale precision. In addition to the molecular beam epitaxy in ultrahigh vacuum condition, we also adopted the metallic overlayer growth at the liquid solid interface by using nanoparticle deposition from colloidal suspension. We monitored in situ the adsorption of gold nanoparticles by using infrared absorption spectroscopy and also characterized the grown film by ex situ scanning election microscopy and atomic force microscopy. We have investigated the relation between structural characteristics and the optical characteristics by correlating the real space microscopic information and the spectral information obtained by infrared absorption spectroscopy as well as visible spectroscopy. Especially we have correlated the infrared spectral feature to the structural feature of the grown flat Au nanosheet, and applied this information to the optimization of the au film for applying this film to surface enhanced infrared absorption spectroscopy (SEIRAS). The fabricated film has shown very high enhancement showing 20 percent absorption intensity for monolayer of thiol molecule. We have applied a patent and did a new release thorough the institute public relations department. The project on the atom-scale plasmon is developed into the study of one-dimensional plasmons in atom chains on silicon substrates. We have detected for the first time the 1D Tomonaga plasmon in Au and In atom chains self organized on stepped silicon surfaces. We also clarified the behavior of plasmons at the metal-to-insulator transition via Peierls instability. The results have been published in several paper and invited talks and seminar were done in several conferences and in some universities in Europe.

该项目的目的是通过实现原子级精度控制的人工和自组织过程，开发一种新的方法来测量和应用限制在原子级微小金属物体中的低维型等离子体激元。除了超高真空条件下的分子束外延外，我们还采用了利用胶体悬浮液中的纳米粒子沉积在液固界面处生长金属覆盖层。我们利用红外吸收光谱原位监测金纳米粒子的吸附，并利用异位扫描电子显微镜和原子力显微镜对生长的薄膜进行表征。我们通过将真实空间微观信息与红外吸收光谱以及可见光谱获得的光谱信息相关联，研究了结构特征与光学特征之间的关系。特别是，我们将红外光谱特征与生长的扁平金纳米片的结构特征相关联，并将这些信息应用于金薄膜的优化，以将该薄膜应用于表面增强红外吸收光谱（SEIRAS）。所制造的薄膜表现出非常高的增强效果，单层硫醇分子的吸收强度为 20%。我们已经申请了专利，并通过学院公共关系部门发布了新产品。原子尺度等离子体激元项目发展为硅衬底上原子链中一维等离子体激元的研究。我们首次在阶梯式硅表面上自组织的 Au 和 In 原子链中检测到一维 Tomonaga 等离子体激元。我们还通过 Peierls 不稳定性阐明了金属到绝缘体转变时等离子体激元的行为。研究结果已发表在多篇论文中，并在多个会议和欧洲一些大学进行了邀请报告和研讨会。

项目成果

Quantum well states in ultrathin Bi films from angle-resolved photoemission spectroscopy and first-principles calculations

通过角分辨光电子能谱和第一原理计算研究超薄 Bi 薄膜中的量子阱态

• 发表时间: 2007
• 期刊: Physical review B 75
• 作者: Pol;Vilas; Thiyagarajan;Pappannan; Acharya;Somobratra; Ariga;Katsuhiko; Felner;Israel;T.Hirahara,T.Nagao,I.Matsuda,G.Bihlmayer,E.Chulkov,Y.Koroteev,P.M.Echenique,S.Hasegawa
• 通讯作者: T.Hirahara,T.Nagao,I.Matsuda,G.Bihlmayer,E.Chulkov,Y.Koroteev,P.M.Echenique,S.Hasegawa

表面物性工学ハンドブック(8. 2.3章、9. 5章)

表面特性工程手册（第 8. 2.3 章、第 9. 5 章）

• 发表时间: 2007
• 作者: 富崎欣也;臼井健二;三原久和;長尾忠昭
• 通讯作者: 長尾忠昭

Atomic and electronic structures of P and Bi nanofilms

P和Bi纳米膜的原子和电子结构

• 发表时间: 2007
• 期刊: Japanese Journal of Applied Physics 46
• 作者: M. Saito;Y. Takemori;T. Hashi;T. Nagao
• 通讯作者: T. Nagao

表面増強赤外吸収(SEIRA)センサーの製造方法

表面增强红外吸收（SEIRA）传感器的制造方法

• 发表时间: 2007

Stability of the quasicubic phase in the initial stage of the growth of bismuth films on Si(111)-7×7

• DOI: 10.1063/1.2150598
• 发表时间: 2006-01
• 期刊: Journal of Applied Physics
• 影响因子: 3.2
• 作者: J. Sadowski;T. Nagao;S. Yaginuma;Y. Fujikawa;T. Sakurai;A. I. Oreshkin;M. Saito;T. Ohno