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Atomic Level Characterization of Organic Molecule-Semiconductor Heterostructures by High-resolution Soft Probes

通过高分辨率软探针对有机分子-半导体异质结构进行原子级表征

基本信息

批准号：
15201022
负责人：
NAGAO Tadaaki
金额：
$ 31.37万
依托单位：
National Institute for Materials Science (2004)Tohoku University (2003)
依托单位国家：
日本
项目类别：
Grant-in-Aid for Scientific Research (A)
财政年份：
2003
资助国家：
日本
起止时间：
2003 至 2004
项目状态：
已结题

来源：
https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-15201022/
关键词：
Organic molecule Ultrathin film MBE Crystal growth STM Metal contact Low-energy electron III-V族化合物半導体

项目摘要

In this project, we aimed at elucidating the atomistic picture of the growth process of the organic thin films on semiconductor substrates to obtain useful knowledge for the fabrication of highquality organic thin films. Based on our experience and techniques for characterizing and controlling the epitaxial growth of various semiconductor-on-semiconductor and metal-on-semiconductor surfaces, we tried to extract new knowledge and guiding principles which should be useful for realizing high-quality organic molecular beam epitaxy '(OMBE). Conductive soft materials such as organic semiconductor on Si substrates has become more and more important these days as a promising building blocks for the next generation microelectronics devices. These soft materials are not suited to be studied by conventional surface-sensitive electron probes such as reflection high-energy electron diffraction (RHEED) and other microscopy techniques using electron beams or tunneling electrons. In this context, high … More -sensitivity soft probes without, or with extremely low electron dose has been strongly desired, In the present project, we utilize high-sensitivity soft probes with slow electron beam such as high-resolution electron energy loss spectroscopy (HREELS), spot-profile-analyzing low-energy electron diffraction (SPA LEED) and low-energy electron microscopy (LEEM) and non-contact atomic force microscopy (nc-AFM). These novel analytical tools are nondestructive against organic thin layers and provides us important information on the structural and functional properties of organic heterostructures. In this project, we have systematically searched for good inorganic substrates for the high-quality growth of pentacene overlayer, such as stepped silicon surfaces, high-index silicon surfaces, metal monolayer coated surfaces, etc. Substrates with metallic surfaces are concluded to be not suited for the formation of abrupt interfaces since the molecules lies down and mostly forms disordered wetting layer. The same happens for the insulating substrates such as silicon dioxide. The best system we found was the Bi multi layers on Si(111) -7x7 substrate, which has rather inert chemical nature against the molecule but still highly conductive due to its semimetallic electronic and bond nature. On this template surface, we have found that the pentacene growth perfectly epitaxially to the Si(111) substrate and its domain size ranges more than a few tens of micrometers. We have found various other organic molecules and several good combinations for the hetemepitaxial OMBE growth which will be suited to form p-n organic junction, electroluminescence device structure, etc. We judge our project as very successful one which provided new knowledge on the atomistic characterization and precise control of the OMBE and thus opens up a wide avenue towards the development of new low-dimensional functional materials for the future microelectronics device application. Less

本计画的主要目的在于阐明有机薄膜在半导体基底上成长过程的原子图像，以获得高品质有机薄膜的制造所需的知识。基于我们的经验和技术，表征和控制各种半导体上的半导体和金属上的半导体表面的外延生长，我们试图提取新的知识和指导原则，这应该是有用的实现高品质的有机分子束外延（OMBE）。导电软材料如硅基有机半导体材料作为下一代微电子器件的重要组成部分，已经变得越来越重要。这些软材料不适合用传统的表面敏感电子探针，如反射高能电子衍射（RHEED）和其他使用电子束或隧道电子的显微镜技术进行研究。在此背景下，高 ...更多信息在本项目中，我们利用高灵敏度的软探针与慢电子束，如高分辨率电子能量损失谱（HREELS），斑点轮廓分析低能电子衍射（SPA LEED）和低能电子显微镜（LEEM）和非接触原子力显微镜（nc-AFM）。这些新的分析工具对有机薄膜是无损的，并为我们提供了重要的信息，有机异质结构的结构和功能特性。在这个项目中，我们已经系统地寻找良好的无机基板的高质量的生长并五苯覆盖层，如阶梯硅表面，高指数硅表面，金属单层涂层表面等基板与金属表面的结论是不适合形成突变的界面，因为分子躺下，主要形成无序的润湿层。同样的情况也发生在绝缘衬底上，比如二氧化硅。我们发现最好的系统是Si（111）-7x7衬底上的Bi多层膜，其对分子具有相当惰性的化学性质，但由于其半金属电子和键性质，仍然具有高导电性。在此模板表面上，我们发现并五苯在Si（111）衬底上外延生长，其畴大小在几十微米以上。我们已经发现了各种其他有机分子和几种用于异质外延OMBE生长的良好组合，它们将适合于形成p-n有机结，电致发光器件结构，我们判断我们的项目是非常成功的，它提供了关于OMBE的原子表征和精确控制的新知识，从而为开发新的低-未来微电子器件应用的三维功能材料。少