Atomic Level Carrier Dynamics of Low-Dimensional Mario-Objects in Momentum-Energy Space

动量能量空间中低维马里奥物体的原子级载流子动力学

• 批准号: 13450019
• 负责人: NAGAO Tadaaki
• 金额: $ 9.86万
• 依托单位: Tohoku University
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for Scientific Research (B)
• 财政年份: 2001
• 资助国家: 日本
• 起止时间: 2001 至 2002
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/en/grant/KAKENHI-PROJECT-13450019/
• 关键词: plasmon; electron energy loss spectroscopy; silicon; silver; epitaxy; thin film; LEED; エピタクシャル成長; エネルギー分散関係; 電荷; 電子回折; エピタクシー

To elucidate the microscopic origin of the macroscopic physical properties of low-dimensional conductive matters, dynamics and interaction in electron systems are studied by measuring the wave vector dependence of the frequency and the lifetime of sheet plasmons. New characterization method with atomic-layer sensitivity utilizing sheet plasmon will be established and applied for searching functional materials that consists of low-dimensional conductive structures. We have studied the charge dynamics in metallic multilayers, monolayers etc. with high carrier density, and have clarified the evolution in the plasmon dispersion curve as a function of thickness, or change in the dimensionality. Two biggest achievements here were the (1) first experimental observations of a sheet plasmon (2D plasmon) in a semiconductor surface-state band. And (2) the observation of a quasi-2D mode at the interface of metallic multilayers on Si. Also, plasmon dispersion in the array of quantum wires have been measured and strong anisotropy has been detected.

为了阐明低维导电事物的宏观物理特性的显微镜起源，通过测量板浆的频率和寿命的波矢量依赖性来研究电子系统中的动力学和相互作用。利用板等离子体的原子层灵敏度的新特征方法将建立并应用于由低维导电结构组成的搜索功能材料。我们已经研究了具有高载体密度的金属多层，单层等的电荷动力学，并阐明了等离子体色散曲线的演化是厚度的函数，或者尺寸的变化。这里的两个最大成就是（1）在半导体表面谱带中对板等离子体（2D等离子体）的第一个实验观察。 （2）在SI上金属多层的界面上观察准2D模式。同样，已经测量了量子线阵列中的等离子体色散，并检测到了强各向异性。

项目成果

長尾忠昭: "Dispersion and damping of a two-dimensional plasmon in a metallic surface"PHYSICAL REVIEW LETTERS. 86. 5747-5750 (2001)

Tadaaki Nagao：“金属表面二维等离子体激元的色散和阻尼”物理评论快报 86. 5747-5750 (2001)。

時 方暁: "Electromigration and phase transformation of Ag on a Cu-precovered Si(111) surface"Surface Science. 493(1-3). 331-337 (2001)

Fangxiao Toki：“Ag在Cu预覆盖的Si（111）表面上的电迁移和相变”表面科学493（1-3）331-337（2001）。

Y.Fujikawa, K.Akiyama, T.Nagao, T.Sakurai, M.G.Lagally, T.Hashimoto, Y.: "Origin of the Stability of Ge(105) on Si : A New Structure Model and Surface Strain Relaxation"Physical Review Letters. 88. 176101-1-176101-4 (2002)

Y.Fujikawa、K.Akiyama、T.Nagao、T.Sakurai、M.G.Lagally、T.Hashimoto、Y.：“Si 上 Ge(105) 稳定性的起源：一种新的结构模型和表面应变松弛”物理评论

稲岡 毅: "高分解能電子エネルギー損失分光におけるプローブ分散領域の運動学的解析"真空. 45・3. 200-203 (2002)

Takeshi Inaoka：“高分辨率电子能量损失光谱中探针分散区域的运动分析”真空45・3（2002）。

S.Abe, T.Inaoka, M.Hasegawa: "Evolution of electron states at a narrow-gap semiconductor surface in an accumulation-layer formation process"Physhical Review B. 66・20. 205309(8) (2002)

S.Abe、T.Inaoka、M.Hasekawa：“累积层形成过程中窄带隙半导体表面的电子状态的演化”Physical Review B. 66・20（2002）。