Optical properties of semiconductor nanostructures studied by Near-field optical spectroscopy in a TEM

通过 TEM 近场光谱研究半导体纳米结构的光学特性

• 批准号: 19310072
• 负责人: OHNO Yutaka
• 金额: $ 12.73万
• 依托单位: Tohoku University
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for Scientific Research (B)
• 财政年份: 2007
• 资助国家: 日本
• 起止时间: 2007 至 2009
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-19310072/
• 关键词: ナノ材料評価; 透過電子顕微鏡; 局在近接場分光法; ナノ構造体; ラマン散乱; フォトルミネセンス

We have developed an apparatus for making a localized evanescent field spot on a specimen equipped in a transmission electron microscope. We have applied the apparatus for evaluating an optical response of dislocations in ZnO crystals, and revealed that screw dislocations in ZnO have a localized energy level of about 2.5eV in depth.

我们研制了一种在透射电子显微镜上的样品上产生局域倏逝场斑的装置。我们应用该装置对ZnO晶体中位错的光学响应进行了评价，发现ZnO中的螺型位错具有深度约为2.5eV的局域能级。

项目成果

Converting an insulating silicon nanochain to a conducting carbon nanotube by electric breakdown

通过电击穿将绝缘硅纳米链转化为导电碳纳米管

• 发表时间: 2009
• 期刊: Nanotechnology 20
• 作者: T. Nogami;Y. Ohno;S. Ichikawa;H. Kohno
• 通讯作者: H. Kohno

In-situ analysis of optoelectronic properties of dislocations in ZnO by TEM observations

通过 TEM 观察对 ZnO 中位错的光电特性进行原位分析

• 发表时间: 2009
• 期刊: physica status solidi (a) 206
• 作者: Y. Ohno;T. Taishi;I. Yonenaga
• 通讯作者: I. Yonenaga

Electronic properties of dislocations in wurtzite ZnO single-crystals

纤锌矿ZnO单晶位错的电子性质

• 发表时间: 2009
• 作者: Y.Ohno;H.Koizumi;T.Taishi;K.Fujii;H.Goto;T.Yao;I.Yonenaga
• 通讯作者: I.Yonenaga

Electronic properties of dislocations in wurtzite ZnO bulk single crystals freshly induced by plastic deformation

塑性变形新诱导的纤锌矿 ZnO 块体单晶位错的电子特性

• 发表时间: 2008
• 作者: Y. Ohno;H. Koizumi;T. Taishi;K. Fujii;H. Goto;T. Yao;and I. Yonenaga
• 通讯作者: and I. Yonenaga

Optical properties of ZnO including fresh dislocations induced by plastic deformation

ZnO 的光学特性，包括塑性变形引起的新位错

• 发表时间: 2007
• 作者: Y. Ohno;H. Koizumi;T. Taishi;I. Yonenaga;K. Fujii;H. Goto;T.Yao
• 通讯作者: T.Yao