Optical properties of semiconductor nanostructures studied by in-stu optical spectroscopy in a transmission electron microscope.

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We have developed a new experimental method of transmission electronmicroscopy (TEM) combined with optical spectroscopy. Supported by the Grant-in-Aid, the apparatus for optical measurement has been much advanced, and is available for polarizing measurement. The polarization of light emitted from a small area of specimen, which is simultaneously observed by TEM, can now be analyzed. We have applied this advanced technique to study the light emitted from Cu-Pt type ordered GalnPsemiconductors. We have found that extended defects, so called antiphase boundary (APB) act as quantum wells which emits exitonic light due to interband transition. The key experimental data in this new finding is that we have determined convincingly that the light is well polarized according to the well structures.We have also measured the light emitted from silicon nanowires that were grown by our own recipe of crystal growth. We have observed polarized light presumably due to quantum confinement, even though much qualitative studies is needed.In conclusion, we have developed the new experimental technique, anddemonstrated that this is very much suitable for the studies on nanostructures and associated electronic structures. The techniques will be applied generally to various heterogeneous nanostructures which has gained much interest recently.