Optical properties of semiconductor nanostructures studied by in-stu optical spectroscopy in a transmission electron microscope.

通过透射电子显微镜中的原位光学光谱研究半导体纳米结构的光学特性。

• 批准号: 11640316
• 负责人: OHNO Yutaka
• 金额: $ 2.3万
• 依托单位: Osaka University
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for Scientific Research (C)
• 财政年份: 1999
• 资助国家: 日本
• 起止时间: 1999 至 2000
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-11640316/
• 关键词: antiphase boundaries; silicon nanowire; quantum wells; GaInP; polarized spectroscopy; cathodoluminescence; transmission electron microscopy

We have developed a new experimental method of transmission electronmicroscopy (TEM) combined with optical spectroscopy. Supported by the Grant-in-Aid, the apparatus for optical measurement has been much advanced, and is available for polarizing measurement. The polarization of light emitted from a small area of specimen, which is simultaneously observed by TEM, can now be analyzed. We have applied this advanced technique to study the light emitted from Cu-Pt type ordered GalnPsemiconductors. We have found that extended defects, so called antiphase boundary (APB) act as quantum wells which emits exitonic light due to interband transition. The key experimental data in this new finding is that we have determined convincingly that the light is well polarized according to the well structures.We have also measured the light emitted from silicon nanowires that were grown by our own recipe of crystal growth. We have observed polarized light presumably due to quantum confinement, even though much qualitative studies is needed.In conclusion, we have developed the new experimental technique, anddemonstrated that this is very much suitable for the studies on nanostructures and associated electronic structures. The techniques will be applied generally to various heterogeneous nanostructures which has gained much interest recently.

我们发展了一种新的透射电子显微镜（TEM）与光谱学相结合的实验方法.在国家助学金的资助下，光学测量仪器有了很大的进步，并可用于偏振测量。从样品的一个小区域发射的光的偏振，这是同时观察到的TEM，现在可以分析。我们应用这种先进的技术研究了Cu-Pt型有序GaInP半导体的发光。我们发现扩展的缺陷，即所谓的反相边界（APB），可以作为量子威尔斯阱，由于带间跃迁而发射出激子光。这项新发现的关键实验数据是，我们已经令人信服地确定，根据阱结构，光是偏振良好的。我们还测量了由我们自己的晶体生长配方生长的硅纳米线发出的光。我们已经观察到了可能是由于量子限制引起的偏振光，尽管还需要大量的定性研究。总之，我们发展了新的实验技术，并证明这非常适合于纳米结构和相关电子结构的研究。该技术将被普遍应用于各种异质纳米结构，最近已经获得了很大的兴趣。

项目成果

Y.Ohno and S.Takeda: "Mesoscopic characterization of the optical property of antiphase boundaries"Proceedings of Materials Research Society. (掲載受理). (2000)

Y.Ohno 和 S.Takeda：“反相边界光学特性的介观表征”材料研究学会论文集（已接受出版）。

S.Takeda,Y.Kuno,N.Hosoi and K.Shimoyama: "Extension mechanism of antiphase-boundaries in CuPt B-type ordered GaInP and(Al,Ga)InP2 epitaxial layers"J.Cryst.Growth. 205. 11-19 (1999)

S.Takeda、Y.Kuno、N.Hosoi 和 K.Shimoyama：“CuPt B 型有序 GaInP 和 (Al,Ga)InP2 外延层中反相边界的延伸机制”J.Cryst.Growth。

N.Ozaki, Y.Ohno, and S.Takeda: "Optical properties of Si nanowires on a Si {111} surface"Proceedings of Materials Research Society. vol.588. 99-103 (2000)

N.Ozaki、Y.Ohno 和 S.Takeda：“Si {111} 表面上的 Si 纳米线的光学特性”材料研究学会论文集。

Y.Kuno,S.Takeda,M.Hirata,Y.Ohno,M.Hosoi and K.Shimoyama: "Formation model for microstructures in a (Al, GA, In) P natural superlattice"11th International Conterence on Microscopy of Semiconducting Materials. 164. 287-290 (2000)

Y.Kuno,S.Takeda,M.Hirata,Y.Ohno,M.Hosoi 和 K.Shimoyama：“(Al, GA, In) P 天然超晶格中微结构的形成模型”第 11 届国际半导体材料显微镜会议

Y.Ohno and S.Takeda: "Mesoscopic characterization of the optical property of antiphase boundaries in CuPt-ordered GaInP_2"Proceedings of Materials Research Society. vol.588. 105-110 (2000)

Y.Ohno 和 S.Takeda：“CuPt 有序 GaInP_2 中反相边界光学性质的介观表征”材料研究学会会刊。