Defect reactions in semiconductors under electronic excitation condition studied by in-stu optical spectroscopy in a transmission electron microscope.

我们用电子显微镜的阴极发光(CL)和光致发光(PL)光谱系统地研究了CuPT有序GaInP在电子激发条件下的点缺陷反应，观察到120keV以上的电子辐照使发光强度降低。从发光强度随电子剂量的变化率的分析表明，发光强度的降低是由于电子辐照产生的Ga和亚晶格上的Frenkel型缺陷所致，计算出Ga和In原子位移的阈值电子能量分别为145和120keV。在亚晶格中的两个Ga衬底上形成的Frenkel型缺陷导致了原子有序度的降低，我们用原位光学光谱定量地研究了这种降低。我们提出：1)在剂量低于2×10^&lt；20&gt；cm^&lt；-2&gt；-2&gt；的剂量范围内，电子辐照引起的-I11(Ga和In)空位的迁移是无序化的主要原因；2)在剂量高于5×10^&lt；21&gt；cm^&lt；-2&gt；时，-HI空位和间隙的自发复合主导无序化。我们可以首先观察到(Ga，In)P中Ill族空位的复合增强迁移，本实验数据可能有助于对电子辐照下点缺陷反应的一般理解。本研究为电子辐照下Ga和In空位的产生和迁移提供了更多的实验数据。用透射电子显微镜的原位光谱学方法研究电子辐照下的缺陷反应是非常有用的。

We have systematically investigated point-defects-reactions in CuPt-ordered GaInP under an electronic excitation condition by means of cathodoluminescence (CL) and photoluminescence (PL) spectroscopy in a transmission electron microscope.A decrease of luminescence intensity by an electron-irradiation in the energy range above 120 keV has been observed. From an analysis of the variation rate of the luminescence intensity vs. electron dose, we have shown that the decrease is due to the Frenkel-type defects on the Ga and In sublattices generated by electron-irradiation, and the threshold election energies for the displacement of Ga and In atoms have been estimated to be 145 and 120 keV, respectively. Formation of the Frenkel-type defects on both the Ga land In sublattices results in the decrease of the degree of atomic ordering, and we have quantitatively studied the decrease by in-situ optical spectroscopy. We have proposed that 1) an electron-irradiation-induced migration of group-Ill (Ga and In) vacancies dominates the disordering in the dose range below 2x10^<20> cm^<-2>, and 2) spontaneous recombinations of a group-HI vacancy and an interstitial dominate the disordering in the dose range above 5x10^<21> cm^<-2>. We could first observe the recombination-enhanced migration of the group-Ill vacancies in (Ga, In)P, and the present experimental data may be useful for a general understanding of point-defect-reactions under electron-irradiation.This study has provided additional experimental data about the generation and migration of Ga- and In-vacancies under electron-irradiation. in-situ optical spectroscopy in a TEM method is useful to study defect-reactions under electron-irradiation.