Hybrid Memristive Device with Multilevel-Modulated Electrical Conductance of Interfaced Atomically Thin 2D Materials and Molecular Oxides (2DPOMristor)

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The project 2DPOMristor aims to develop a conceptually new memristive device based on intrinsic and synergetic properties of two-dimensional (2D) transition metal dichalcogenide (TMDC) and molecular metal-oxide (polyoxometalate, POM) switching materials. Because of their ability to exhibit redox-based conductance switching at room temperature, POMs as zero-dimensional (0D) single molecules or 2D layers will be used as leverage to modulate the resistive properties of 2D-TMDC semiconductors. The implementation of electrical contact measurements by micro needles should ensure an effective transition from fundamental microspectroscopic studies towards economically relevant devices for the development of cost-efficient electronics. The project bundles research activities at the cross-section of technologically oriented surface modification by responsive organic-inorganic materials using wet-chemical and vacuum-based methods, scanning probe microscopy and potential-induced switching, external electrical contacting by synchronized measurements, and computational chemistry. As a proof of principle, a 3D print of the 2DPOMristor prototype device with a crossbar array of solution-processed memristive cells will be realized by using a solvent-based inkjet technique. The ambition of the project along the value chain is to achieve the technology readiness level 4 (technology validated in lab).