Interaction between Bubble and Substrate by In-Liquid Plasma CVD Process

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The film formation mechanism of in-liquid plasma CVD method is clarified by analyzing the high-speed camera photographs of the bubbles surrounding in-liquid plasma The experimental condition for the uniform film formation is shown. The control method of the chemical reaction for synthesizing a compound semiconductor like diamond, silicon carbide and aluminum nitride is proved. The chemical reaction between the atom that has the highest electronegativity and the atom that has the lowest ionization energy occurs with first priority.