Preparation and application of crystalline template layers on no crystalline substrates by a quasi-nanoimprinting method

准纳米压印法在无晶基底上制备结晶模板层及应用

• 批准号: 20560003
• 负责人: SATO Yuichi
• 金额: $ 3万
• 依托单位: Akita University
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for Scientific Research (C)
• 财政年份: 2008
• 资助国家: 日本
• 起止时间: 2008 至 2010
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-20560003/
• 关键词: 薄膜; 単結晶; 非単結晶基板

Materials and growth conditions for the crystalline template layers were investigated. Matching between materials of the template layers and semiconductors were also investigated. Heat-treatment atmosphere of In thin films was varied from inactive to oxygen included one in preparation of In_2O_3 template layers and their crystallization was controlled by it. Other crystalline metal films could be also obtained in narrow windows of their crystallization conditions. The In_2O_3 films were possible to be applied as template layers for several compound semiconductor films.

研究了晶态模板层的材料和生长条件。研究了模板层材料与半导体材料的匹配问题。In薄膜的热处理气氛由非活性气氛转变为氧气气氛，其中包括制备In_2O_3模板层的气氛，其晶化受其控制。其他晶态金属薄膜也可以在其结晶条件的狭窄窗口中获得。In_2O_3薄膜可用作多种化合物半导体薄膜的模板层。

项目成果

In薄膜の熱酸化・再結晶化によるIn_2O_3薄膜の作製

In薄膜热氧化及再结晶制备In_2O_3薄膜

• 发表时间: 2008
• 作者: 大竹文人;羽鳥裕俊;小坂井啓一;佐藤祐一
• 通讯作者: 佐藤祐一

A Dependence of Crystallinity of In_2O_3 Thin Films by a Two-Step Heat Treatment of Indium Films on the Heating Atmosphere

铟膜两步热处理制备的In_2O_3薄膜结晶度对加热气氛的依赖性

• 发表时间: 2010
• 期刊: J. Mod. Phys
• 作者: Yuichi Sato;Fumito Otake;Hirotoshi Hatori
• 通讯作者: Hirotoshi Hatori

In_2O_3下地層を有するサファイア基板へのIII族窒化物薄膜の成長

In_2O_3底层蓝宝石衬底上III族氮化物薄膜的生长

• 发表时间: 2011
• 作者: 伊藤一樹;原田康平;船木昂介;竹本皓樹;岩城雅人;佐藤祐一
• 通讯作者: 佐藤祐一

真空蒸着法により作製したInドープCdTe薄膜のPL特性

真空蒸镀法制备In掺杂CdTe薄膜的PL特性

• 发表时间: 2009
• 作者: 小舘達;荒井学;佐藤祐一
• 通讯作者: 佐藤祐一

Crystallinity of In_2O_3 Thin Films on Sapphire Substrates Obtained by a Two-Step Heat Treatment of Metal Indium Thin Films

金属铟薄膜两步热处理获得的蓝宝石衬底上In_2O_3薄膜的结晶度

• 发表时间: 2010
• 作者: C.Moriyoshi;J.Kato;Y.Terado;S.Wada;M.Takata;Y.Kuroiwa;Yuichi Sato
• 通讯作者: Yuichi Sato