Research on preparations of precise-resistance thin-film materials having higher resistivity with zero-temperature dependence

零温度依赖性高电阻率精密电阻薄膜材料的制备研究

• 批准号: 16560267
• 负责人: SATO Yuichi
• 金额: $ 1.98万
• 依托单位: Akita University
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for Scientific Research (C)
• 财政年份: 2004
• 资助国家: 日本
• 起止时间: 2004 至 2006
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/en/grant/KAKENHI-PROJECT-16560267/
• 关键词: thin film; sputtering; resistance

In this research, preparations of novel thin film resistance materials which have small temperature coefficient of resistance (TCR) and higher resistivities compared with those of the usual materials were investigated. Firstly, effects of nitrogen, oxygen and substrate temperatures on electrical properties of ZnO : In thin films were investigated. The TCR showed minimum value when In_2O_3 was added to ZnO at 9 wt%. The resistivities decreased with increasing of N_2 partial pressure, whereas the resistivities increased with the increasing of N_2 partial pressure when it was over 20 %. Carrier concentration of the ZnO based films became high as 10^<20>cm^<-3> when Al_2O_3 was added to ZnO at 2 wt%. Resistivity of the films increase from 10^<-3> to 1 Ω・cm by adding Cu to the films, and their TCR became low within 100 ppm/℃ Moreover, resistivity of the ZnO films increased from 10^<-1> to 10^3 Ω・cm by mixing MgO to the films. Degenerated Al_2O_3 added ZnMgO films kept high carrier concentration, whereas Hall mobility of them was extremely low and their resistivity increased to about 3×10^<-3> Ω・cm. Their TCR showed within 50 ppm/℃. The resistivities showed much higher value when the substrate material was changed from sapphire single crystals to quartz glasses.

本研究主要研究制备具有较小电阻温度系数（TCR）和较高介电常数的新型薄膜电阻材料。首先，研究了氮、氧和衬底温度对ZnO：In薄膜电学性能的影响。当In_2O_3的添加量为9wt%时，电阻温度系数出现最小值。随着N_2分压的增加，结晶度降低，当N_2分压大于20%时，结晶度随N_2分压的增加而增加。当Al_2O_3的质量分数为2%时，ZnO基薄膜的载流子浓度高达10 μ <20>cm ~ 3<-3>。Cu的加入使ZnO薄膜的电阻率从10 Ω<-3>·cm提高到1 Ω·cm，电阻温度系数（TCR）降低到100 ppm/℃以内。MgO的加入使ZnO薄膜的电阻率从10 Ω·cm提高<-1>到103 Ω·cm。退化的Al_2O_3掺杂ZnMgO薄膜保持了较高的载流子浓度，但其霍尔迁移率极低，电阻率增加到3×10^<-3>Ω·cm左右。TCR均在50 ppm/℃以内。当衬底材料由蓝宝石单晶变为石英玻璃时，折射率显示出更高的值。

项目成果

Growth of ZnO films on quartz glass substrates having recrystallized ZnO under layers and their crystallinities

ZnO 薄膜在具有再结晶 ZnO 下层的石英玻璃基板上的生长及其结晶度

• 发表时间: 2007
• 期刊: Abstract of the 15^<th> International Conference on Crystal Growth (to be published)
• 作者: Yoko Amano;Hiroyuki Kajiwara;Toshifumi Suzuki
• 通讯作者: Toshifumi Suzuki

Preparations and electrical properties of Al, Cu co-doped ZnO thin films

Al、Cu共掺杂ZnO薄膜的制备及电学性能

• 发表时间: 2006
• 期刊: Abstracts of the Annual Meeting of the Ceramic Society of Japan 170
• 作者: Masayuki Nishitani;Tomoki Nagao;Daigo Yonetsu;Takehisa Hara;Shigeki Shimada;Yuichi Sato
• 通讯作者: Yuichi Sato

AlとCuを同時に添加したZnO系薄膜の作製と電気的特性

同时添加Al和Cu的ZnO薄膜的制备及电学性能

• 发表时间: 2006
• 期刊: 日本セラミクス協会2006年年会講演予稿集
• 作者: Yoko Amano;Hiroyuki Kajiwara;Toshifumi Suzuki;佐藤 祐一
• 通讯作者: 佐藤 祐一

Preparations of ultra-precision resistors with ultra-high resistivity by introducing indium and nitrogen to ZnO semiconductor thin-films

ZnO半导体薄膜引入铟和氮制备超高电阻率超精密电阻器

• 发表时间: 2004
• 期刊: Proceedings of International Workshop on Resource Science and Engineering of Rare Metals
• 作者: 西谷真幸;長尾智記;米津大吾;原武久;島田茂樹;Yuichi Sato
• 通讯作者: Yuichi Sato

Investigation of ZnO based thin films as resistance materials with small temperature coefficients

ZnO基薄膜作为小温度系数电阻材料的研究

• 发表时间: 2006
• 期刊: Advances in Science and Technology 45
• 作者: 米津大吾;長尾智記;西谷真幸;原武久;島田茂樹;天野耀鴻;Yuichi Sato
• 通讯作者: Yuichi Sato