Research on preparations of precise-resistance thin-film materials having higher resistivity with zero-temperature dependence

零温度依赖性高电阻率精密电阻薄膜材料的制备研究

基本信息

  • 批准号:
    16560267
  • 负责人:
  • 金额:
    $ 1.98万
  • 依托单位:
  • 依托单位国家:
    日本
  • 项目类别:
    Grant-in-Aid for Scientific Research (C)
  • 财政年份:
    2004
  • 资助国家:
    日本
  • 起止时间:
    2004 至 2006
  • 项目状态:
    已结题

项目摘要

In this research, preparations of novel thin film resistance materials which have small temperature coefficient of resistance (TCR) and higher resistivities compared with those of the usual materials were investigated. Firstly, effects of nitrogen, oxygen and substrate temperatures on electrical properties of ZnO : In thin films were investigated. The TCR showed minimum value when In_2O_3 was added to ZnO at 9 wt%. The resistivities decreased with increasing of N_2 partial pressure, whereas the resistivities increased with the increasing of N_2 partial pressure when it was over 20 %. Carrier concentration of the ZnO based films became high as 10^<20>cm^<-3> when Al_2O_3 was added to ZnO at 2 wt%. Resistivity of the films increase from 10^<-3> to 1 Ω・cm by adding Cu to the films, and their TCR became low within 100 ppm/℃ Moreover, resistivity of the ZnO films increased from 10^<-1> to 10^3 Ω・cm by mixing MgO to the films. Degenerated Al_2O_3 added ZnMgO films kept high carrier concentration, whereas Hall mobility of them was extremely low and their resistivity increased to about 3×10^<-3> Ω・cm. Their TCR showed within 50 ppm/℃. The resistivities showed much higher value when the substrate material was changed from sapphire single crystals to quartz glasses.
本研究主要研究制备具有较小电阻温度系数(TCR)和较高介电常数的新型薄膜电阻材料。首先,研究了氮、氧和衬底温度对ZnO:In薄膜电学性能的影响。当In_2O_3的添加量为9wt%时,电阻温度系数出现最小值。随着N_2分压的增加,结晶度降低,当N_2分压大于20%时,结晶度随N_2分压的增加而增加。当Al_2O_3的质量分数为2%时,ZnO基薄膜的载流子浓度高达10 μ <20>cm ~ 3<-3>。Cu的加入使ZnO薄膜的电阻率从10 Ω<-3>·cm提高到1 Ω·cm,电阻温度系数(TCR)降低到100 ppm/℃以内。MgO的加入使ZnO薄膜的电阻率从10 Ω·cm提高<-1>到103 Ω·cm。退化的Al_2O_3掺杂ZnMgO薄膜保持了较高的载流子浓度,但其霍尔迁移率极低,电阻率增加到3×10^<-3>Ω·cm左右。TCR均在50 ppm/℃以内。当衬底材料由蓝宝石单晶变为石英玻璃时,折射率显示出更高的值。

项目成果

期刊论文数量(22)
专著数量(0)
科研奖励数量(0)
会议论文数量(0)
专利数量(0)
Growth of ZnO films on quartz glass substrates having recrystallized ZnO under layers and their crystallinities
ZnO 薄膜在具有再结晶 ZnO 下层的石英玻璃基板上的生长及其结晶度
Preparations and electrical properties of Al, Cu co-doped ZnO thin films
Al、Cu共掺杂ZnO薄膜的制备及电学性能
AlとCuを同時に添加したZnO系薄膜の作製と電気的特性
同时添加Al和Cu的ZnO薄膜的制备及电学性能
Preparations of ultra-precision resistors with ultra-high resistivity by introducing indium and nitrogen to ZnO semiconductor thin-films
ZnO半导体薄膜引入铟和氮制备超高电阻率超精密电阻器
Investigation of ZnO based thin films as resistance materials with small temperature coefficients
ZnO基薄膜作为小温度系数电阻材料的研究
  • DOI:
  • 发表时间:
    2006
  • 期刊:
  • 影响因子:
    0
  • 作者:
    米津大吾;長尾智記;西谷真幸;原武久;島田茂樹;天野耀鴻;Yuichi Sato
  • 通讯作者:
    Yuichi Sato
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SATO Yuichi其他文献

乾燥収縮ひずみが50層RC造建物の地震応答に及ぼす影響
干燥收缩应变对50层钢筋混凝土建筑地震响应的影响
  • DOI:
  • 发表时间:
    2021
  • 期刊:
  • 影响因子:
    0
  • 作者:
    SATO Yuichi;NAGANUMA Kazuhiro and KANEKO Yoshio;佐藤裕一,長沼一洋,金子佳生;佐藤裕一,豊田侑輔,長沼一洋,金子佳生
  • 通讯作者:
    佐藤裕一,豊田侑輔,長沼一洋,金子佳生
乾燥収縮を受けた耐震壁の落錘実験と三次元有限要素解析
干缩剪力墙落锤试验及三维有限元分析
  • DOI:
  • 发表时间:
    2022
  • 期刊:
  • 影响因子:
    0
  • 作者:
    SATO Yuichi;NAGANUMA Kazuhiro and KANEKO Yoshio;佐藤裕一,長沼一洋,金子佳生
  • 通讯作者:
    佐藤裕一,長沼一洋,金子佳生
Parallelism for NLFEM for RC incorporated with Bond Redistribution Procedure
RC 的 NLFEM 并行性与债券再分配程序相结合
  • DOI:
  • 发表时间:
    2022
  • 期刊:
  • 影响因子:
    0
  • 作者:
    SATO Yuichi;NAGANUMA Kazuhiro and KANEKO Yoshio
  • 通讯作者:
    NAGANUMA Kazuhiro and KANEKO Yoshio

SATO Yuichi的其他文献

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{{ truncateString('SATO Yuichi', 18)}}的其他基金

Development of the power generator using of self-excited vibration of a flat plate by a light breeze
利用平板微风自激振动开发发电机
  • 批准号:
    26420169
  • 财政年份:
    2014
  • 资助金额:
    $ 1.98万
  • 项目类别:
    Grant-in-Aid for Scientific Research (C)
Exhaustive study for aquisition of eary diagnostic or the anti-cancer drug sensitivity markers for lung cancer
获得肺癌早期诊断或抗癌药物敏感性标记物的详尽研究
  • 批准号:
    23590414
  • 财政年份:
    2011
  • 资助金额:
    $ 1.98万
  • 项目类别:
    Grant-in-Aid for Scientific Research (C)
Study on the prevention of self-excited vibration which are generated in the support of high stack
高叠层支撑自激振动的防治研究
  • 批准号:
    23560251
  • 财政年份:
    2011
  • 资助金额:
    $ 1.98万
  • 项目类别:
    Grant-in-Aid for Scientific Research (C)
Extension of discrete-like crack analysis method for RC to hysteresis response analysis
RC 离散裂纹分析方法扩展到磁滞响应分析
  • 批准号:
    21760430
  • 财政年份:
    2009
  • 资助金额:
    $ 1.98万
  • 项目类别:
    Grant-in-Aid for Young Scientists (B)
Study on the characteristic and the countermeasures against self-excited vibrations which are generated in the support part of high stack
高堆垛支撑部位自激振动特性及对策研究
  • 批准号:
    20560211
  • 财政年份:
    2008
  • 资助金额:
    $ 1.98万
  • 项目类别:
    Grant-in-Aid for Scientific Research (C)
Preparation and application of crystalline template layers on no crystalline substrates by a quasi-nanoimprinting method
准纳米压印法在无晶基底上制备结晶模板层及应用
  • 批准号:
    20560003
  • 财政年份:
    2008
  • 资助金额:
    $ 1.98万
  • 项目类别:
    Grant-in-Aid for Scientific Research (C)
Exhaustive proteome analyses of pulmonary neuroendocrine carcinomas
肺神经内分泌癌的详尽蛋白质组分析
  • 批准号:
    19590365
  • 财政年份:
    2007
  • 资助金额:
    $ 1.98万
  • 项目类别:
    Grant-in-Aid for Scientific Research (C)
Wind Induced Vibration of Braces Adjacent to a High Circular Stack
与高圆形堆栈相邻的支架的风致振动
  • 批准号:
    18560221
  • 财政年份:
    2006
  • 资助金额:
    $ 1.98万
  • 项目类别:
    Grant-in-Aid for Scientific Research (C)
The prevention of the low frequency noise problem generated with enlargement of an overflow gate
防止因扩大溢流门而产生的低频噪声问题
  • 批准号:
    15560195
  • 财政年份:
    2003
  • 资助金额:
    $ 1.98万
  • 项目类别:
    Grant-in-Aid for Scientific Research (C)
Improvement of ISH method for the detection of rare mRNAs in pathology archival tissues and establishment of its standard evaluation method
病理档案组织中稀有mRNA检测ISH方法的改进及其标准评价方法的建立
  • 批准号:
    15590315
  • 财政年份:
    2003
  • 资助金额:
    $ 1.98万
  • 项目类别:
    Grant-in-Aid for Scientific Research (C)

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Development of water splitting photoelectrochemical cell using liquid phase-flux controlled sputtering method
液相通量控制溅射法水分解光电化学电池的研制
  • 批准号:
    23H01907
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    2023
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使用多脉冲等离子体通过高效且可持续的溅射系统制备功能材料
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    23K03817
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    2023
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Development of Functional Thin Films with Ultra-Trace Doping by Powder Sputtering
粉末溅射超微量掺杂功能薄膜的开发
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    23K03373
  • 财政年份:
    2023
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    $ 1.98万
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UHV Sputtering System for the Deposition of Ultrathin Films and Heterostructures
用于沉积超薄膜和异质结构的 UHV 溅射系统
  • 批准号:
    517957243
  • 财政年份:
    2023
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    $ 1.98万
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機械的特性と抗菌性を合わせ持つハイブリッド炭素膜の合成に関する研究
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Advanced Thin Film Sputtering Fabrication Facility (TF-FAB)
先进薄膜溅射制造设备 (TF-FAB)
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用于反铁磁自旋电子材料的 MBE 溅射系统
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