Improvement of insulator/ Germanium interface by surface passivation for high-mobility Ge based transistor.

通过表面钝化改善高迁移率锗基晶体管的绝缘体/锗界面。

• 批准号: 20560300
• 负责人: KANASHIMA Takeshi
• 金额: $ 3万
• 依托单位: Osaka University
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for Scientific Research (C)
• 财政年份: 2008
• 资助国家: 日本
• 起止时间: 2008 至 2011
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-20560300/
• 关键词: 作成・評価技術; 量子化学計算; 表面; Ge; 分子軌道計算; 表面・界面物性; High-k; 表面反応; 表面処理; 硫化アンモニウム; 作製・評価技術; HCl

Germanium has been attracting much attention for high-performance ULSI, because it has higher electron and hole mobilities than Si. However, Ge-based MIS transistors still have the problems such as a high interface state density. So, the passivation of the Ge surface has been studied to reduce the interface state density. The theoretical analysis was carried out to search for alternative terminal materials on the Ge surface, and the passivation effects have been characterized experimentally. As a result, it is shown that F, Cl and S treatments can reduce the interface state density.

锗由于具有比硅更高的电子和空穴迁移率，在高性能超大规模集成电路中备受关注。然而，Ge基MIS晶体管仍然具有诸如高界面态密度的问题。因此，研究了Ge表面的钝化以降低界面态密度。进行了理论分析，以寻找替代终端材料的Ge表面上，钝化效果进行了实验表征。结果表明，F、Cl和S处理可以降低界面态密度。

项目成果

HfO_2/Ge MIS構造のHCl表面処理による電気的特性の向上

HfO_2/Ge MIS结构的HCl表面处理改善电性能

• 发表时间: 2011
• 作者: 久保和樹;Dong Hun Lee;金島岳
• 通讯作者: 金島岳

Theoretical Analysis of Fluorine-Passivated Germanium Surface for High-k/Ge Gate Stack by Molecular Orbital Method

高k/Ge栅叠层氟钝化锗表面分子轨道法理论分析

• 发表时间: 2010
• 期刊: Appl.Surf.Sci.
• 作者: D.H;Lee;H.Lee;T.Kanashima;M.Okuyama
• 通讯作者: M.Okuyama

HfO2/Ge MIS構造のF2処理と窒素ラジカル処理による電気的特性の向上

HfO2/Ge MIS结构通过F2处理和氮自由基处理改善电特性

• 发表时间: 2009
• 期刊: 電子情報通信学会技術研究報告書 SDM2009
• 作者: 今庄秀人;Hyun Lee;Dong-Hun Lee;吉岡祐一;金島岳;奥山雅則
• 通讯作者: 奥山雅則

Characteristics improvement of HfO_2/Ge gate stack structure by fluorinetreatment of germanium surface

锗表面氟处理改善HfO_2/Ge栅叠层结构特性

• 发表时间: 2008
• 期刊: Applied Surface Sciencet 254
• 作者: H. Lee;D. H. Lee;T. Kanashima;M. Okuyama
• 通讯作者: M. Okuyama

Preparation and Characterization of Hafnium Silicate Dielectric Layers by Photo-Assisted MOCVD Using Mixed Precursor of Hf(O-t-C_4H_9)_4 and Si(O-t-C_4H_9)_4

Hf(O-t-C_4H_9)_4和Si(O-t-C_4H_9)_4混合前驱体光辅助MOCVD制备硅酸铪电介质层并表征

• 发表时间: 2008
• 期刊: Integrated Ferroelectrics
• 影响因子: 0.7
• 作者: H. Lee;T. Kanashima and M. Okuyama
• 通讯作者: T. Kanashima and M. Okuyama