Improvement of insulator/ Germanium interface by surface passivation for high-mobility Ge based transistor.

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Germanium has been attracting much attention for high-performance ULSI, because it has higher electron and hole mobilities than Si. However, Ge-based MIS transistors still have the problems such as a high interface state density. So, the passivation of the Ge surface has been studied to reduce the interface state density. The theoretical analysis was carried out to search for alternative terminal materials on the Ge surface, and the passivation effects have been characterized experimentally. As a result, it is shown that F, Cl and S treatments can reduce the interface state density.