Analyses of chemical reaction producing carbonized-metal for ULSI plasma etching process
ULSI等离子刻蚀工艺碳化金属化学反应分析
基本信息
- 批准号:20760023
- 负责人:
- 金额:$ 2.75万
- 依托单位:
- 依托单位国家:日本
- 项目类别:Grant-in-Aid for Young Scientists (B)
- 财政年份:2008
- 资助国家:日本
- 起止时间:2008 至 2009
- 项目状态:已结题
- 来源:
- 关键词:
项目摘要
This study was for plasma etching technology in fabrication of ULSI MOSFET gate with a few ten nm size and hafnium oxide as an insulating material. In CF_4/Ar plasmas with addition of CO or H_2 resulting in making the gas phase carbon-rich, the etch rates of Si and SiO_2 were decreased. On the other hand, that of HfO_2 was increased, which implied that HfO_2 could be etched in the reaction of carbonized-hafnium formed as an etch product.
本研究系以氧化铪为绝缘材料,探讨电浆蚀刻技术在超大规模半导体场效电晶体闸极制程中之应用。在CF_4/Ar等离子体中加入CO或H_2使气相富碳,降低了Si和SiO_2的刻蚀速率。另一方面,HfO_2的腐蚀速率增加,这意味着HfO_2可以在碳化铪的腐蚀反应中被腐蚀。
项目成果
期刊论文数量(0)
专著数量(0)
科研奖励数量(0)
会议论文数量(0)
专利数量(0)
COおよびH2添加CF4プラズマにおけるHfO2のエッチング特性
HfO2 在添加 CO 和 H2 的 CF4 等离子体中的蚀刻特性
- DOI:
- 发表时间:2010
- 期刊:
- 影响因子:0
- 作者:美山遼;高橋和生
- 通讯作者:高橋和生
COおよびH_2添加CF_4プラズマにおけるHfO_2のエッチング特性
HfO_2在CO和H_2添加CF_4等离子体中的刻蚀性能
- DOI:
- 发表时间:2010
- 期刊:
- 影响因子:0
- 作者:美山遼;高橋和生
- 通讯作者:高橋和生
Etching of diamond-like carbon in fluorocarbon plasmas
氟碳等离子体中类金刚石碳的蚀刻
- DOI:
- 发表时间:2008
- 期刊:
- 影响因子:0
- 作者:Rei Takahashi;Kazuo Takahashi
- 通讯作者:Kazuo Takahashi
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TAKAHASHI Kazuo其他文献
TAKAHASHI Kazuo的其他文献
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23770087 - 财政年份:2011
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