Study on electro plating and etching for metal interconnect in integrated circuit assisted with ArF excimer laser

这项工作的目的是建立一种通过紫外激光照射辅助在晶圆表面直接制作金属互连图案的技术。通过将紫外激光照射在浸有处理溶液的晶圆表面上，待照射的区域将被局部电镀或蚀刻。该技术可以实现集成电路中金属互连图形的制作。目前情况下，紫外激光照射可以增强局部蚀刻。晶圆上的铜不仅使用化学溶液蚀刻，还使用超纯水。当应用双UV激光束曝光(在λ＝193nm、4mJ/脉冲；100脉冲/秒的条件下)时，超纯水中的蚀刻速率为10nm/min。该技术的主要问题是短波长紫外激光在工艺溶液中的透过率以及不同复合工艺溶液中增强或抑制的过程控制。

The aim of this work is to establish a technology which can fabricate metallic interconnection pattern directly on wafer surface by assisting with ultra violet laser irradiation. By irradiating the UV laser on the wafer surface dipped in process solution, the region to be irradiated would be locally plated or etched. This technique could realize the fabrication of metallic interconnection pattern used in integrated circuit. At present circumstance, UV laser irradiation can enhance the local etching. The copper on wafer was etched by not only use of the chemical solution, but also use of ultra pure water. The etching rate in ultra pure water was 10 nm/min, when applying the dual UV laser beam exposure (under the conditions of λ=193nm, 4mJ/pulse ; 100pulse/sec). Main issues of this technology are the transmissivity of the short wavelength of UV laser in process solutions and the process control of enhancement or inhibition in different compounding process solution.