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Study on electro plating and etching for metal interconnect in integrated circuit assisted with ArF excimer laser

Study on electro plating and etching for metal interconnect in integrated circuit assisted with ArF excimer laser
ArF准分子激光辅助集成电路金属互连电镀和刻蚀研究
批准号:
20760086
负责人:
KHAJORNRUNGRUANG Panart
金额:
$2.0万
依托单位国家:
日本
项目类别:
Grant-in-Aid for Young Scientists (B)
财政年份:
2008
资助国家:
日本
项目状态:
已结题
起止时间:
2008 至 2009

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项目成果

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中文摘要
翻译
本工作的目的是建立一种利用紫外激光辅助直接在硅片表面制作金属互连图形的技术。通过将UV激光照射在浸入工艺溶液中的晶片表面上,待照射的区域将被局部电镀或蚀刻。该工艺可实现集成电路金属互连图形的制作。目前,紫外激光照射可以增强局部刻蚀。不仅使用化学溶液,而且使用超纯水蚀刻晶片上的铜。当采用双紫外激光束曝光(λ= 193 nm,4 mJ/pulse ; 100 pulse/sec)时,在超纯水中的刻蚀速率为10 nm/min。该技术的主要问题是短波长紫外激光在工艺溶液中的透射和不同配混工艺溶液中增强或抑制的过程控制。
英文摘要
The aim of this work is to establish a technology which can fabricate metallic interconnection pattern directly on wafer surface by assisting with ultra violet laser irradiation. By irradiating the UV laser on the wafer surface dipped in process solution, the region to be irradiated would be locally plated or etched. This technique could realize the fabrication of metallic interconnection pattern used in integrated circuit. At present circumstance, UV laser irradiation can enhance the local etching. The copper on wafer was etched by not only use of the chemical solution, but also use of ultra pure water. The etching rate in ultra pure water was 10 nm/min, when applying the dual UV laser beam exposure (under the conditions of λ=193nm, 4mJ/pulse ; 100pulse/sec). Main issues of this technology are the transmissivity of the short wavelength of UV laser in process solutions and the process control of enhancement or inhibition in different compounding process solution.
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Cu-CMP with Ultraviolet light irradiation in deionized water
去离子水中紫外光照射的 Cu-CMP
DOI: --
发表时间: 2008
期刊:
影响因子: --
作者: [Panart Khajornrungruang, Keiichi Kimura, Nobutaka Sumomoai]
通讯作者: Nobutaka Sumomoai
DOI: --
发表时间: 2009
期刊:
影响因子: --
作者: [N. Hayazawa, H. Ishitobi, and S. Kawata, 神崎政人]
通讯作者: 神崎政人
Cu-CMP assisted with Ultra Violet light irradiation directly to wafersurface
Cu-CMP 辅助紫外线直接照射到晶圆表面
DOI: --
发表时间: 2009
期刊:
影响因子: --
作者: [Panart Khajornrungruang, Keiichi Kimura, Nobutaka Sumomogi]
通讯作者: Nobutaka Sumomogi
DOI: --
发表时间: 2009
期刊:
影响因子: --
作者: [Panart Khajornrungruang, Keiichi Kimura, Nobutaka Sumomogi]
通讯作者: Nobutaka Sumomogi
7
    On-Machine Polishing Phenomena Observation Apparatus Development and Its Phenomenon Analysis
    • 批准号:
      25870514
    • 项目类别:
      Grant-in-Aid for Young Scientists (B)
    • 资助金额:
      $2.75万
    • 财政年份:
      2013
    • 负责人:
      KHAJORNRUNGRUANG Panart
    • 依托单位:
    海外基金