Pressure effect and its mechanism of interlayer coupling on the artificial lattice with semiconductor/ferromagnetic phaces of iron silicide.

点击翻译按钮获取中文摘要

We present preliminary results of electrical resistivity measurements of Fe3Si/FeSi2 aetificial lattices under hydrostatic pressures up to 2.6GPa. The measurement have been performed on the Fe3Si single layer thin film and the[Fe3Si(25A)/FeSi2(7.5A)] 20 multilayer thin film with anti-ferromagnetically coupling among Fe3Si layers. For the Fe3Si single layer thin film, it is observed that the resistivity increases with increasing pressure, showing a tendency to saturate. On the other hand, it is found that the resistivity of the[Fe3Si(25A)/FeSi2(7.5A)]_<20> multilayer thin film increases monotonically with increasing pressure. The pressure effect of the resistivity for Fe3Si single layered thin film were less than+0.6%/GPa, and for FeSi2 single layered thin film, were less than+1.0%/GPa, and for the[Fe3Si(25A)/FeSi2(7.5A)] 0_<20> multilayer thin film with anti-ferromagnetically coupling, were less than+2%/GPa, and for ferromagnetocally coupling, were less than+1.0%/GPa.