Pressure effect and its mechanism of interlayer coupling on the artificial lattice with semiconductor/ferromagnetic phaces of iron silicide.

硅化铁半导体/铁磁相人工晶格的压力效应及其层间耦合机制。

• 批准号: 21560022
• 负责人: TAKEDA Kaoru
• 金额: $ 3.08万
• 依托单位: Fukuoka Institute of Technology
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for Scientific Research (C)
• 财政年份: 2009
• 资助国家: 日本
• 起止时间: 2009 至 2011
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-21560022/
• 关键词: ヘテロ構造; 鉄シリサイド; 人工格子; 静水圧力; 電気抵抗率; 超格子; 量子井戸; スピントロニ; 圧力効果; スピントロニクス

We present preliminary results of electrical resistivity measurements of Fe3Si/FeSi2 aetificial lattices under hydrostatic pressures up to 2.6GPa. The measurement have been performed on the Fe3Si single layer thin film and the[Fe3Si(25A)/FeSi2(7.5A)] 20 multilayer thin film with anti-ferromagnetically coupling among Fe3Si layers. For the Fe3Si single layer thin film, it is observed that the resistivity increases with increasing pressure, showing a tendency to saturate. On the other hand, it is found that the resistivity of the[Fe3Si(25A)/FeSi2(7.5A)]_<20> multilayer thin film increases monotonically with increasing pressure. The pressure effect of the resistivity for Fe3Si single layered thin film were less than+0.6%/GPa, and for FeSi2 single layered thin film, were less than+1.0%/GPa, and for the[Fe3Si(25A)/FeSi2(7.5A)] 0_<20> multilayer thin film with anti-ferromagnetically coupling, were less than+2%/GPa, and for ferromagnetocally coupling, were less than+1.0%/GPa.

本文报道了在2.6GPa的静水压力下，Fe_3Si/FeSi_2人工晶格电阻率的初步测量结果。对Fe_3Si单层薄膜和Fe_3Si层间具有反铁磁耦合的[Fe_3Si（25 A）/FeSi_2（7.5 A）]_（20）多层薄膜进行了测量。对于Fe 3Si单层薄膜，观察到电阻率随着压力的增加而增加，并呈现饱和趋势。另一方面，发现[Fe 3Si（25 A）/FeSi 2（7.5A）]_3多层膜的电阻率<20>随压力的增加而单调增加。Fe 3Si单层薄膜的电阻率压力效应小于+0.6%/GPa，FeSi 2单层薄膜的电阻率压力效应小于+1.0%/GPa，[Fe 3Si（25 A）/FeSi 2（7.5A）] 0_<20>2多层薄膜的电阻率压力效应小于+2%/GPa，铁磁耦合薄膜的电阻率压力效应小于+1.0%/GPa。

项目成果

Fe3Si/NC-FeSi2人工格子の強磁性層間結合に及ぼす電流注入および温度変調効果

电流注入和温度调制对 Fe3Si/NC-FeSi2 超晶格中铁磁层间耦合的影响

• 发表时间: 2009
• 作者: T.Kolodiazhnyil;^*;M.Tachibanal;H.Kawaji2;J.Hwang3;E.Takayama-Muromachil;堺研一郎
• 通讯作者: 堺研一郎

Interfacial structure of Fe3Si/FeSi2 layered films deposited on si(111) at elevated substrate-temperatures

高温下沉积在 si(111) 上的 Fe3Si/FeSi2 层状薄膜的界面结构

• DOI: 10.1142/s0217979209062943
• 发表时间: 2009
• 期刊: International Journal of Modern Physics B
• 影响因子: 1.7
• 作者: K. Takeda;T. Yoshitake;Yoshiki Sakamoto;D. Hara;M. Itakura;N. Kuwano;K. Nagayama
• 通讯作者: K. Nagayama

Fe-Si系人工格子の高圧下における電気抵抗測定

Fe-Si超晶格高压下电阻测量

• 发表时间: 2010
• 作者: 高崎理一;中西剛司;武田薫;平川信一;園田貴之;吉武剛
• 通讯作者: 吉武剛

Current-Induced Magnetization Switching in Fe3Si/FeSi2 Multilayered films

Fe3Si/FeSi2 多层薄膜中的电流感应磁化翻转

• 发表时间: 2011
• 作者: T. Kolodiazhnyi;H. Sakurai;N. Vittayakorn;Takayuki Sonoda
• 通讯作者: Takayuki Sonoda

Fe_3Si/ナノ微結晶FeSi_2/Fe_3Si三層膜における電流注入による磁化反転

Fe_3Si/纳米晶 FeSi_2/Fe_3Si 三层薄膜中电流注入的磁化反转

• 发表时间: 2009
• 作者: 平川信一;堺研一郎;武田薫;吉武剛;永山邦仁
• 通讯作者: 永山邦仁