Development of hetero-structure control and opto-electronics device application technology based on III-nitride semiconductor nanowall crystal

建立了人工控制形状的“纳米墙”薄GaN纳米晶体的选区RF-MBE生长工艺。研究发现，纳米墙底部的位错阻止机制可以实现高质量的无位错晶体生长。阐明了纳米墙顶面形状控制技术、嵌入InGaN有源层的生长条件以及InGaN/GaN纳米墙发射特性的依赖关系。通过对GaN纳米墙的室温光泵浦激光和首次展示了AlGaN/GaN异质结纳米FET，证明了GaN纳米墙在光学和电子器件方面的应用潜力。

The selective area RF-MBE growth technology of artificially shape controlled thin GaN nano-crystal of "nanowall" was established. It was found that dislocation stopping mechanism at the bottom of nanowall brings about high quality dislocation-free crystal growth. Nanowall top shape control technique, growth conditions of embedded InGaN active layer and dependency of emission characteristics of InGaN/GaN nanowall was clarified. The potentiality of GaN nanowall for optical and electronic device application was proved by room temperature photo-pumped lasing of GaN nanowall and first demonstration of AlGaN/GaN heterostructure nano-FET.