Fundamental research on spin-dependent functional devices based on half-metallic ferromagnet/semiconductor hybrid structures

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The purpose of this research project was to develop fundamental technologies for creation of viable spintronic devices, in which electron spins are utilized as an additional degree of freedom for information and storage. For that purpose we demonstrated highly-efficient spin injection from halfmetallic ferromanet of Co-based Heusler alloy into GaAs and Si. Furthermore we clarified spin-dependent transport properties through the investigation of spin lifetime and interplay between electron spins and nuclear spins in the semiconductor channels.