Development of a new composite material for quantum dot solar cell

本研究的目的是开发一种新型的半导体纳米晶镶嵌在氧化物或硒基质中的复合薄膜，用于量子点太阳能电池。我们提出了Ge/Nb_2O_5和PbSe/ZnSe复合薄膜。由于半导体纳米晶的量子尺寸效应，Ge/Nb_2O_5和PbSe/ZnSe复合薄膜在封装合成过程中表现出明显的相分离和吸收。此外，在硅衬底上沉积的PbSe/ZnSe复合薄膜在PbSe含量相对较少的情况下，在可见光区产生光电流。

The objective of this study is to develop a new composite thin film with semiconductor nanocrystals embedded in oxide or selenium matrix for quantum dot solar cell. We proposed Ge/Nb_2O_5 and PbSe/ZnSe composite thin films, which were phase-separated in package synthesis and exhibited visible absorption due to quantum-size effect of the semiconductor nanocrystals. In addition, the PbSe/ZnSe composite thin film, deposited on a Si substrate, induces a photocurrent in visible region at relatively less PbSe content.