Probing a charge state of dopant atoms in silicon surfaces

探测硅表面掺杂剂原子的电荷状态

• 批准号: 21760242
• 负责人: SAGISAKA Keisuke
• 金额: $ 3万
• 依托单位: National Institute for Materials Science
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for Young Scientists (B)
• 财政年份: 2009
• 资助国家: 日本
• 起止时间: 2009 至 2010
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-21760242/
• 关键词: シリコン; ドーパント; 走査トンネル顕微鏡; リン; 電子散乱

In order to investigate charging states of individual dopant (phosphorus) atoms in silicon surfaces, a new method to evaporate phosphorus on the Si(100) surface was suggested and phosphorus adsorbed on the surface was studied. Phosphorus molecules were successfully evaporated from a small piece of an indium phosphide wafer heated to 400C. It was found by scanning tunneling microscopy (STM) observations that there are five different structures in adsorption of phosphorus molecules on the Si(100) surface. Those physical and electronic structures were identified by bias-dependent STM imaging and simulations based on density functional theory. Furthermore, phosphorus molecules were successfully incorporated in the silicon surface by heating the sample at 500C.

为了研究硅表面单个掺杂（磷）原子的荷电状态，提出了一种在Si（100）表面蒸发磷的新方法，并研究了磷在Si（100）表面的吸附。磷分子成功地从加热到400 ℃的一小块磷化铟晶片上蒸发出来。通过扫描隧道显微镜（STM）观察发现，磷分子在Si（100）表面的吸附存在五种不同的结构。这些物理和电子结构被确定的偏置依赖STM成像和基于密度泛函理论的模拟。此外，通过在500 ℃下加热样品，磷分子成功地掺入到硅表面中。

项目成果

Manipulation of silicon adatoms and electronic structures on Si(111)-7x7

Si(111)-7x7 上硅吸附原子和电子结构的操控

• 发表时间: 2010
• 作者: 鷺坂恵介;ミハエル・マルツ;藤田大介;デビット・ボウラー;Keisuke Sagisaka
• 通讯作者: Keisuke Sagisaka

Silicon adatom switching and manipulation on Si(111)-7x7

Si(111)-7x7 上的硅吸附原子切换和操控

• 发表时间: 2010
• 期刊: Nanotechnology 21
• 作者: K.Sagisaka;A.Luce;D.Fujita
• 通讯作者: D.Fujita

Si(100)表面に吸着したリン分子のSTM観察

Si(100)表面吸附磷分子的STM观察

• 发表时间: 2011
• 作者: 鷺坂恵介;ミハエル・マルツ;藤田大介;デビット・ボウラー
• 通讯作者: デビット・ボウラー