Probing a charge state of dopant atoms in silicon surfaces

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In order to investigate charging states of individual dopant (phosphorus) atoms in silicon surfaces, a new method to evaporate phosphorus on the Si(100) surface was suggested and phosphorus adsorbed on the surface was studied. Phosphorus molecules were successfully evaporated from a small piece of an indium phosphide wafer heated to 400C. It was found by scanning tunneling microscopy (STM) observations that there are five different structures in adsorption of phosphorus molecules on the Si(100) surface. Those physical and electronic structures were identified by bias-dependent STM imaging and simulations based on density functional theory. Furthermore, phosphorus molecules were successfully incorporated in the silicon surface by heating the sample at 500C.