Creation of carbon semiconductor thin films containing silicon nanoparticles and their applications

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We have deposited carbon thin films containing spherical particles by radio-frequency plasma-enhanced chemical vapor deposition using methane and organosilicon compounds such as monomethylsilane and dimethylsilane as the silicon sources. Chemical composition analyses revealed that particles from monomethylsilane were composed mainly of silicon. Pulsed substrate bias or intermittent supply of monomethylsilane was used to control the generation and growth of particles. In addition, the size and density of particles changed with dilution gases, deposition pressure, and substrate bias.