A study of control and use of single impurity energy levels in semiconductors toward advanced functions for quantum information communication technology.

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To make the single-photon sources with identical emission wavelength and intensity, a research on control and use of the localized energy levels of isoelectronic impurities in III-V compound semiconductors has been done. In particular, we clarified an appropriate nitrogen doping method into GaAs and demonstrated a single-photon emission with identical energy for the first time. The emission lifetime and polarization property were also revealed. Many basic data and useful knowledge, which are essential to the relevant research and development in near future, were obtained through this research.