Development of new type sensor structures using epitaxial-thin-film growth technology

利用外延薄膜生长技术开发新型传感器结构

• 批准号: 22360289
• 负责人: SHINOZAKI Kazuo
• 金额: $ 12.23万
• 依托单位: Tokyo Institute of Technology
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for Scientific Research (B)
• 财政年份: 2010
• 资助国家: 日本
• 起止时间: 2010 至 2012
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-22360289/
• 关键词: センサー材料; 光機能材料; ガスセンサー; 酸化物薄膜; エピタキシャル; エピタキシャル薄膜; ガス拡散型センサー; ガス吸着型センサー; ガス拡散センサー; ガス吸着センサー

There are commercially available two types of gas sensors. One is the adsorption type gas sensor that isporous structure with sintered fine particles of gas sensitive semiconductor oxide. The other is thediffusion type gas sensor that is composed of the sintered oxide solid electrolyte. We apply epitaxialthin film growth technology into the new type gas sensor structures. In case of gas adsorption type sensor, applying the epitaxial thin film to the gas sensor structure bringsthe excellent sensing ability at lower concentration of the target gas and improved the response time. Tidoped Zn ferrite (ZFTO) epitaxial films were deposited on Y2O3 doped ZrO substrate by introducing Znferrite (ZFO) homo-epitaxial buffer layer using pulsed laser deposition (PLD). Homo-epitaxialZFTO/ZFO/YSZ films showed higher conductivity then hetero-epitaxial ZFTO/YSZ films. Resistivityof the homo-epitaxial ZFTO films changed with NO22 gas concentration. Sensitivity of the ZFTO filmswere changed with film thickness and NO gas concentration. The maximum sensitivity was obtained atthe 3 nm of ZFTO film thickness. The Cr doped SrTiO23 epitaxial thin film deposited on the SrTiOsingle crystal substrate showed high sensitivity even at 10-23 atm of O partial pressure. The maximumsensitivity was obtained at the 2.5 nm of Cr doped SrTiOIn case of gas diffusion type gas sensor, Y doped ZrO232 film thickness. (YSZ) epitaxial thin film was deposited on (100)Si substrate. This film did not contain the grain boundary which disturbs the oxide ion diffusion. Thethinner film thickness compared with sintered body reduced the internal resistivity. The calculated EMFvalue was obtained at 350oC using YSZ epitaxial film on Si with porous Pt electrode. AC impedancemeasurement revealed the oxide ion in the YSZ thin film diffused at 150La0.6Sr0.4Co0.98Ni0.02 O (LSCNO) electrode to YSZ epitaxial film reduces the working temperature at180℃

市场上有两种类型的气体传感器。一种是吸附式气敏传感器，它是由气敏半导体氧化物的细颗粒烧结而成的多孔结构。另一种是由烧结氧化物固体电解质构成的扩散型气敏元件。我们将外延薄膜生长技术应用于新型气敏结构中。在气体吸附型传感器的情况下，将外延薄膜应用于气体传感器结构带来了在目标气体的较低浓度下的优异的感测能力，并改善了响应时间。采用脉冲激光沉积（PLD）技术，在Y2 O3掺杂的ZrO衬底上引入Zn铁氧体（ZFO）同质外延缓冲层，制备了Tidoped Zn铁氧体（ZFTO）外延薄膜。同质外延的ZFTO/ZFO/YSZ薄膜比异质外延的ZFTO/YSZ薄膜具有更高的电导率。同质外延ZFTO薄膜的电阻率随NO22气体浓度的变化而变化。ZFTO薄膜的灵敏度随薄膜厚度和NO气体浓度的变化而变化。当ZFTO膜厚为3 nm时，灵敏度最高.在SrTiO_（23）单晶衬底上生长的Cr掺杂SrTiO_（23）外延薄膜在氧分压为10-23 atm时仍表现出很高的灵敏度。在扩散型气敏元件中，Cr掺杂的SrTiO_（232）在2.5nm处具有最大的灵敏度。(YSZ)在（100）Si衬底上淀积外延薄膜。该膜不含干扰氧离子扩散的晶界。与烧结体相比，较薄的膜厚度降低了内部电阻率。在350 ℃时，用多孔Pt电极在Si上外延YSZ薄膜，得到了计算的电动势值。交流阻抗测试表明，在150La0.6Sr0.4Co0.98Ni0.02O（LSCNO）电极上，YSZ薄膜中的氧离子扩散到YSZ外延膜上，使YSZ外延膜的工作温度降低到180 ℃

项目成果

Ti添加ZnFe_2O_4エピタキシャル薄膜のNO_2ガスセンシング特性評価

Ti掺杂ZnFe_2O_4外延薄膜NO_2气敏特性评价

• 发表时间: 2012
• 作者: 荒井悠美;佐藤聡真;Jeffrey Cross;塩田忠;櫻井修;篠崎和夫;木口賢紀;脇谷尚樹
• 通讯作者: 脇谷尚樹

YSZ薄膜酸素センサー状に形成した(La,Sr)(Co,Ni)O電極の低温動作特性評価

YSZ薄膜氧传感器形状的(La,Sr)(Co,Ni)O电极的低温工作特性评估

• 发表时间: 2012
• 作者: D.Maruoka;M.Nanko;永原,海老澤,塩田,櫻井,篠崎,脇谷
• 通讯作者: 永原,海老澤,塩田,櫻井,篠崎,脇谷

Control of crystal orientations in epitaxial thin-films by introducing atomic layer buffers on Si and oxide substrates

通过在硅和氧化物衬底上引入原子层缓冲来控制外延薄膜中的晶体取向

• 发表时间: 2011
• 作者: K.Shinozaki;H.-Y.Go;T.Kiguchi;N.Wakiya;J.S.Cross;O.Sakurai
• 通讯作者: O.Sakurai

Ti添加物ZnFe_2O_4エピタキシャル薄膜へのガス吸着特性に及ぼす光照射の影響

光照射对Ti添加剂ZnFe_2O_4外延薄膜气体吸附性能的影响

• 发表时间: 2012
• 作者: 福永 圭佑;當代 光陽;中野 貴由;野村 直之;塙 隆夫;佐藤,荒井,塩田,櫻井,篠崎,脇谷
• 通讯作者: 佐藤,荒井,塩田,櫻井,篠崎,脇谷

Oxygen-Concentration-Dependent Electrical Resistances of SrTiO3-Based Thin Films

SrTiO3 基薄膜的氧浓度依赖性电阻

• 发表时间: 2010
• 期刊: Jpn.J.Appl.Phys.
• 作者: Toru Hara;Takashi Ishiguro;Kazuo Shinozaki
• 通讯作者: Kazuo Shinozaki