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Development of homogeneous solid electrolyte/electrode structureby chemical vapor deposition method

Development of homogeneous solid electrolyte/electrode structureby chemical vapor deposition method
采用化学气相沉积法开发均质固体电解质/电极结构
批准号:
23656426
负责人:
SHINOZAKI Kazuo
金额:
$2.5万
依托单位国家:
日本
项目类别:
Grant-in-Aid for Challenging Exploratory Research
财政年份:
2011
资助国家:
日本
项目状态:
已结题
起止时间:
2011 至 2012

项目摘要

项目成果

SHINOZAKI Kazuo的其他基金

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中文摘要
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英文摘要
Typical fabrication process of making solid electrolyte for the fuel cell is sintering. However it brings the inhomogeneity of cations from the in sufficient mixing of the raw materials and local diffusion during the sintering and also during long time running of power generation. These inhomogeneity is enhanced the large amount of trivalent cation doping, such as 20-30 at%. We proposed the chemical vapor deposition (CVD) using Ce(EtCp)_4 (Ce (C_5H_4C_2H_5)_4) and Gd(EtCp)_3 (Gd(C_5H_4C_2H_5)_3) as the source materials. In this research, we determined the optimum condition of these raw materials for CVD process for low-pressure coldwall-type-CVD apparatus. We succeeded to fabricate the columnar type GDC film on Al_2O_3, SiO_2/Si substrates. It was found that the film was grown at around 300℃ and has columnar structure that means no grain boundary in the out of plane direction. Since thinner thickness of the film and almost no grain boundary along the out of plane direction, oxide ion can be able to diffuse even at 180℃ by AC measurement. New type atmospheric pressure CVD apparatus was developed to grow the film with very fast growth rate. We also tried to fabricated the porous electrodes with dense surface layer for the anode: Ni-GDC and the cathode: LaSrCoO_3-GDC. GDC thin films by low pressure CVD were fabricated on the porous electrodes, and tried to generate the electric power in the H_2-O_2 system. Since the power generation test system is preliminary, but we have several important point to realize the CVD derived electrolyte system.
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会议论文
YSZ薄膜酸素センサー上に形成した(La,Sr)(Co,Ni)O3_3電極の低温動作特性評価
YSZ薄膜氧传感器上(La,Sr)(Co,Ni)O3_3电极的低温工作特性评价
DOI: --
发表时间: 2012
期刊:
影响因子: --
作者: [永原和聡, 海老沢琢, 塩田忠, 櫻井修, 篠崎和夫, 脇谷尚樹]
通讯作者: 脇谷尚樹
CVD法による多孔質混合誘電性基板上へのGd添加CeO2_2電解質薄膜合成とその特性
多孔混合介质基底上CVD法合成Gd掺杂CeO2_2电解质薄膜及其性能
DOI: --
发表时间: 2012
期刊:
影响因子: --
作者: [門馬征史, 三田健介, 大島直也, 田中宏樹, 塩田忠, Cross Jeffrey, 櫻井修, 篠崎和夫, 脇谷尚樹]
通讯作者: 脇谷尚樹
Electrical and catalytic properties of mixed condutive (La,Sr) (Co,Ni)O_3 thin-film prepared by pilsed laser deposition
脉冲激光沉积混合导电(La,Sr)(Co,Ni)O_3薄膜的电学和催化性能
DOI: --
发表时间: 2012
期刊:
影响因子: --
作者: [Kazuto Nagahara, ,Taku Ebisawa,Ta dashi Shiota,Naoki Wakiya,Jeffery S Cross, Osamu Sakurai and Kazuo Shinozaki]
通讯作者: Osamu Sakurai and Kazuo Shinozaki
酸化物単結晶基板上のPt薄膜成長に及ぼす ステップエッジの影響
台阶边缘对氧化物单晶衬底上Pt薄膜生长的影响
DOI: --
发表时间: 2012
期刊:
影响因子: --
作者: [Kazuto Nagahara, Taku Ebisawa, Tadashi Shiota, Naoki Wakiya, Jeffery S Cross, Osamu Sakurai and Kazuo Shinozaki, A. Nagai, 井藤洋輝,塩田忠,櫻井修,篠崎和夫,脇谷尚樹]
通讯作者: 井藤洋輝,塩田忠,櫻井修,篠崎和夫,脇谷尚樹
17
    Development of new type sensor structures using epitaxial-thin-film growth technology
    • 批准号:
      22360289
    • 项目类别:
      Grant-in-Aid for Scientific Research (B)
    • 资助金额:
      $12.23万
    • 财政年份:
      2010
    • 负责人:
      SHINOZAKI Kazuo
    • 依托单位:
    Development of oxide solid electrolyte working at lower temperature by stress controlled film deposition method
    • 批准号:
      19360295
    • 项目类别:
      Grant-in-Aid for Scientific Research (B)
    • 资助金额:
      $13.06万
    • 财政年份:
      2007
    • 负责人:
      SHINOZAKI Kazuo
    • 依托单位:
    Chemical interaction in gaseous phase of MOCVD raw materials and self-assembled ferroelectric thin films
    • 批准号:
      15360339
    • 项目类别:
      Grant-in-Aid for Scientific Research (B)
    • 资助金额:
      $9.92万
    • 财政年份:
      2003
    • 负责人:
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    • 依托单位:
    Development and Manufacturing of Maltilayer coated Ceramic-Composite Particles.
    • 批准号:
      11450242
    • 项目类别:
      Grant-in-Aid for Scientific Research (B).
    • 资助金额:
      $8.06万
    • 财政年份:
      1999
    • 负责人:
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    • 依托单位: