Development of homogeneous solid electrolyte/electrode structureby chemical vapor deposition method

采用化学气相沉积法开发均质固体电解质/电极结构

• 批准号: 23656426
• 负责人: SHINOZAKI Kazuo
• 金额: $ 2.5万
• 依托单位: Tokyo Institute of Technology
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for Challenging Exploratory Research
• 财政年份: 2011
• 资助国家: 日本
• 起止时间: 2011 至 2012
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-23656426/
• 关键词: 燃料電池材料; CVD 法低温合成; 燃料電池; Gd添加CeO2; 減圧CVD法; 常圧CVD法; 低温合成; CVD法; GDC; SDC

Typical fabrication process of making solid electrolyte for the fuel cell is sintering. However it brings the inhomogeneity of cations from the in sufficient mixing of the raw materials and local diffusion during the sintering and also during long time running of power generation. These inhomogeneity is enhanced the large amount of trivalent cation doping, such as 20-30 at%. We proposed the chemical vapor deposition (CVD) using Ce(EtCp)_4 (Ce (C_5H_4C_2H_5)_4) and Gd(EtCp)_3 (Gd(C_5H_4C_2H_5)_3) as the source materials. In this research, we determined the optimum condition of these raw materials for CVD process for low-pressure coldwall-type-CVD apparatus. We succeeded to fabricate the columnar type GDC film on Al_2O_3, SiO_2/Si substrates. It was found that the film was grown at around 300℃ and has columnar structure that means no grain boundary in the out of plane direction. Since thinner thickness of the film and almost no grain boundary along the out of plane direction, oxide ion can be able to diffuse even at 180℃ by AC measurement. New type atmospheric pressure CVD apparatus was developed to grow the film with very fast growth rate. We also tried to fabricated the porous electrodes with dense surface layer for the anode: Ni-GDC and the cathode: LaSrCoO_3-GDC. GDC thin films by low pressure CVD were fabricated on the porous electrodes, and tried to generate the electric power in the H_2-O_2 system. Since the power generation test system is preliminary, but we have several important point to realize the CVD derived electrolyte system.

制造用于燃料电池的固体电解质的典型制造工艺是烧结。但在烧结过程中以及发电长时间运行过程中，由于原料的不充分混合和局部扩散，导致阳离子的不均匀性。这些不均匀性被大量的三价阳离子掺杂增强，例如20-30原子%。我们提出了以Ce（EtCp）_4（Ce（C_5H_4C_2H_5）_4）和Gd（EtCp）_3（Gd（C_5H_4C_2H_5）_3）为原料的化学气相沉积（CVD）法。在本研究中，我们确定了这些原料在低压冷壁式化学气相沉积装置上进行化学气相沉积的最佳条件。我们成功地在Al_2O_3、SiO_2/Si衬底上制备了柱状GDC薄膜。结果表明，薄膜生长温度在300℃左右，薄膜具有柱状结构，即在面外方向没有晶界。由于薄膜厚度较薄，沿面外方向沿着几乎没有晶界，交流测量表明，即使在180℃下，氧离子也能够扩散。研制了一种新型常压CVD装置，可快速生长薄膜。我们还尝试制备了具有致密表面层的多孔电极，分别用作阳极：Ni-GDC和阴极：LaSrCoO_3-GDC。用低压CVD法在多孔电极上制备了GDC薄膜，并尝试在H_2-O_2体系中发电。由于发电测试系统是初步的，但我们有几个重要的点来实现CVD衍生电解质系统。

项目成果

YSZ薄膜酸素センサー上に形成した(La,Sr)(Co,Ni)O3_3電極の低温動作特性評価

YSZ薄膜氧传感器上(La,Sr)(Co,Ni)O3_3电极的低温工作特性评价

• 发表时间: 2012
• 作者: 永原和聡;海老沢琢;塩田忠;櫻井修;篠崎和夫;脇谷尚樹
• 通讯作者: 脇谷尚樹

CVD法による多孔質混合誘電性基板上へのGd添加CeO2_2電解質薄膜合成とその特性

多孔混合介质基底上CVD法合成Gd掺杂CeO2_2电解质薄膜及其性能

• 发表时间: 2012
• 作者: 門馬征史;三田健介;大島直也;田中宏樹;塩田忠;Cross Jeffrey;櫻井修;篠崎和夫;脇谷尚樹
• 通讯作者: 脇谷尚樹

Electrical and catalytic properties of mixed condutive (La,Sr) (Co,Ni)O_3 thin-film prepared by pilsed laser deposition

脉冲激光沉积混合导电(La,Sr)(Co,Ni)O_3薄膜的电学和催化性能

• 发表时间: 2012
• 作者: Kazuto Nagahara;,Taku Ebisawa,Ta dashi Shiota,Naoki Wakiya,Jeffery S Cross;Osamu Sakurai and Kazuo Shinozaki
• 通讯作者: Osamu Sakurai and Kazuo Shinozaki

酸化物単結晶基板上のPt薄膜成長に及ぼす ステップエッジの影響

台阶边缘对氧化物单晶衬底上Pt薄膜生长的影响

• 发表时间: 2012
• 作者: Kazuto Nagahara;Taku Ebisawa;Tadashi Shiota;Naoki Wakiya; Jeffery S Cross;Osamu Sakurai and Kazuo Shinozaki;A. Nagai;井藤洋輝，塩田忠，櫻井修，篠崎和夫，脇谷尚樹
• 通讯作者: 井藤洋輝，塩田忠，櫻井修，篠崎和夫，脇谷尚樹

Effect of step edges on the growth of Pt thin films on oxide single-crystal substrates

• DOI: 10.2109/jcersj2.121.278
• 发表时间: 2013-03
• 期刊: Journal of the Ceramic Society of Japan
• 影响因子: 1.1
• 作者: T. Shiota;Hiroki Ito;N. Wakiya;J. Cross;O. Sakurai;K. Shinozaki