Development and Manufacturing of Maltilayer coated Ceramic-Composite Particles.

Maltilayer 涂层陶瓷复合颗粒的开发和制造。

• 批准号: 11450242
• 负责人: SHINOZAKI Kazuo
• 金额: $ 8.06万
• 依托单位: Tokyo Institute of Technology
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for Scientific Research (B).
• 财政年份: 1999
• 资助国家: 日本
• 起止时间: 1999 至 2000
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/en/grant/KAKENHI-PROJECT-11450242/
• 关键词: Pulsed MO-CVD; Buffer Layer; Ferroelectric Material; Remanent Polarization; Pb(Zr, Ti)O_3(PZT); PbTiO_3; PbZrO_3; Nb-SrTiO_3; Nb-SiTiO_3; 組成傾斜膜

The purpose of this study is to realize the single crystal like thin films with controlled residual stress by introducing the buffer layer between thin film and substrate. Several kinds of buffer layers with different composition or compositionally gradient were chosen at the standing points of the lattice mismatch and the thermal expansion coefficient difference between the thin film and the substrate.To clarify the effects of residual stress on the electrical properties of the thin film, the electrical properties of the (001) PbTiO_3 thin film deposited on the (100) SrTiO_3 substrates with different residual stresses were measured. The residual stress was changed by the mechanical thinning of the substrate after thin film deposition or mechanical bending of the substrate. Increasing the inplane tensile stress of the thin film, the remnant polarization and the coercive field of the PbTiO_3 were decreasing.The residual stress was successively controlled by introducing the various buffe … More r layers between epitaxially grown (001)Pb(Zr, Ti)O_3 thin film and (100) SrTiO_3 substrate. PbTiO_3 and compositionally gradient films with PbTiO_3→Pb(Zr, Ti)O_3 or PbZrO_3→Pb(Zr, Ti)O_3 were used as buffer layers. Since lattice mismatch among Pb(Zr, Ti)O_3, buffer layer and SrTiO_3 is rather small in this system, the effect of the lattice mismatch might be negligible compared with the effect of thermal expansion coefficient differences. Introducing the buffer layers with higher thermal expansion coefficient than SrTiO_3 and Pb(Zr, Ti)O_3 such as PbTiO_3 or PbTiO_3→Pb(Zr, Ti)O_3, the in-plane tensile stress of the Pb(Zr, Ti) O_3 film was relaxing. In contrast, the buffer layer with lower thermal expansion coefficient such as PbZrO_3→Pb(Zr, Ti)O_3 extended the in-plane tensile stress.From these results we tried to change the electrical properties by introducing the buffer layer. Pt/PbTiO_3 buffer layers with different PbTiO_3 thickness were introduced between epitaxial (001)PbTiO_3 film and (100)SrTiO_3 substrate to realize Pt/PbTiO_3 /Pt/PbTiO_3 buffer/SrTiO_3. Increasing the thickness of the PbTiO_3 buffer, the remnant polarization was increasing by decreasing the in-plane tensile stress. Less

本研究的目的是通过在薄膜和衬底之间引入缓冲层来实现具有可控残余应力的类单晶薄膜。从晶格失配和薄膜与衬底的热膨胀系数差的角度选择了几种不同成分或成分梯度的缓冲层。为了弄清残余应力对薄膜电学性能的影响，测量了(001)PbTiO3薄膜在不同残余应力下的电学性能。在薄膜沉积或机械弯曲后，通过对衬底进行机械减薄来改变残余应力。随着薄膜面内拉应力的增加，PbTiO_3薄膜的残余极化强度和矫顽场逐渐减小，并通过引入不同的缓冲层…对残余应力进行了控制外延生长的(001)Pb(Zr，Ti)O_3薄膜与(100)SrTiO_3衬底之间有较多的r层。分别采用PbTiO3型和PbTiO3型→、PbZrO3型、→Pb型、PbTiO3型、PbTiO3型和PbZO3型组成梯度薄膜作为缓冲层。由于在该系统中，Pb(Zr，Ti)O_3、缓冲层和SrTiO_3之间的晶格失配很小，与热膨胀系数差异的影响相比，晶格失配的影响可以忽略不计。引入比SrTiO3和PbTiO3PbTiO3或PbTiO3PbTiO3→等具有更高热膨胀系数的缓冲层后，PbTiO3薄膜的面内拉应力有所松弛。相反，具有较低热膨胀系数的缓冲层，如PbZrO_3，→，Pb(Zr，Ti)O_3，则扩展了面内拉应力，并试图通过引入缓冲层来改变其电学性质。在(001)PbTiO3外延薄膜和(100)SrTiO3衬底之间引入不同厚度的PbTiO3缓冲层，实现了Pt/PbTiO3/Pt/PbTiO3缓冲层/SrTiO3。随着PbTiO3缓冲层厚度的增加，面内拉应力减小，剩余极化增加。较少

项目成果

玄 一,黒柳一誠,脇谷尚樹,篠崎和夫,永谷惟恭: "MOCVD法によるPbTiO_3薄膜の成長様式と成膜速度が配向性に及ぼす影響"日本セラミックス協会学術論文誌. 107〔10〕. 955-960 (1999)

Genichi、Issei Kuroyanagi、Naoki Wakiya、Kazuo Shinozaki、Yoshiyasu Nagatani：“生长模式和沉积速率对 MOCVD 法 PbTiO_3 薄膜取向的影响”日本陶瓷学会杂志 107 [10]。 ）

H.Funakubo,K.Nagashima,K.Shinozaki and N.Mizutani: "Comparison of deposition behavior of Pb(Zr,Ti)O_3 films and its end-member-oxide films prepared by MOCVD"Thin Solid Films. 368. 261-265 (2000)

H.Funakubo、K.Nagashima、K.Shinozaki 和 N.Mizutani：“MOCVD 制备的 Pb(Zr,Ti)O_3 薄膜及其端元氧化物薄膜的沉积行为比较”薄固体薄膜。

H.Funakubo, K.Nagashima, K.Shinozaki and N.Mizutani: "Comparison of deposition behavior of Pb(Zr, Ti)O_3 films and its end-member-oxide films prepared by MOCVD"Thin Solid Films. 368. 261-265 (2000)

H.Funakubo、K.Nagashima、K.Shinozaki 和 N.Mizutani：“MOCVD 制备的 Pb(Zr, Ti)O_3 薄膜及其端元氧化物薄膜的沉积行为比较”薄固体薄膜。

A.Endo,A.Iwasaki,N.Wakiya,A.Saiki,K.Shinozaki and N.Mizutani: "Preparation and Properties of PbTiO_3-PbZrO_3 Thin Films by Pulsed MO-Source CVD Method"Key Engineering Materials. 181-182. 77-80 (2000)

A.Endo、A.Iwasaki、N.Wakiya、A.Saiki、K.Shinozaki和N.Mizutani：“脉冲MO源CVD法制备PbTiO_3-PbZrO_3薄膜及其性能”关键工程材料。

N.Wakiya,S.Nagata,M.Higuchi,K.Shinozaki and N.Mizutani: "Preparation of PbTiO_3 Thin Film by Mist Source Plasma Enhanced Chemical Vapor Deposition (CVD) Using Heptane Solvent"Jpn.J.Appl.Phys. 38[9]. 5326-5331 (1999)

N.Wakiya、S.Nagata、M.Higuchi、K.Shinozaki 和 N.Mizutani：“使用庚烷溶剂通过雾源等离子体增强化学气相沉积 (CVD) 制备 PbTiO_3 薄膜”Jpn.J.Appl.Phys。