Development of ZnTe based heterostructure for improvement of efficiency of pure green LED

开发ZnTe基异质结构以提高纯绿色LED的效率

• 批准号: 22560299
• 负责人: NISHIO Mitsuhiro
• 金额: $ 2.83万
• 依托单位: Saga University
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for Scientific Research (C)
• 财政年份: 2010
• 资助国家: 日本
• 起止时间: 2010 至 2012
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-22560299/
• 关键词: ZnTe系材料; ヘテロ接合; 純緑色LED; 結晶評価; アニ-ル効果; 純緑色ＬＥＤ; アニ－ル効果; アニール効果

For ZnTe and Zn_Mg_xTe, the main results on p-type doping by means of metalorganic vapor phase epitaxy, annealing treatment in nitrogen gas flow and so on were briefly summarized as follows. We reviewed our recent research results on the development of ZnTe LEDs. For ZnTe, the electrical and optical properties versus source transport rate, VI/II transport rate ratio and so on have been clarified with and without annealing treatment. P-type doping of Zn_Mg_xTe layer with a high carrier concentration has been obtained by using tris-dimethylaminophosphorus, similar to the case of ZnTe layer. The post-annealing is very effective in obtaining p-type conductive Zn_Mg_xTe for the layer grown under a Te-poor condition. On the other hand, Zn_Mg_xTe layer is characterized by a high compensation ratio for the layer grown under a Te-rich condition, even after annealing treatment. Similar tendencies are also found in P-doped ZnTe layers.

简要介绍了利用金属有机气相外延、氮气气氛下的退火处理等方法进行p型掺杂的主要结果。本文综述了我们最近在发展锌碲发光二极管方面的研究成果。对于ZnTe，研究了退火态和未退火态的电学和光学性质与源输运速率、VI/II输运速率比等的关系。用三二甲氨基磷作为掺杂材料，获得了类似于ZnTe层的高载流子浓度的P型掺杂。对于在贫Te条件下生长的层来说，后退火是获得p型导电材料的非常有效的方法。另一方面，对于在富Te条件下生长的层，即使在退火热处理后，也具有较高的补偿率。在磷掺杂的锌层中也发现了类似的趋势。

项目成果

ZnTe/ZnMgTe量子井戸構造のMBE成長と評価

ZnTe/ZnMgTe量子阱结构的MBE生长和评估

• 发表时间: 2010
• 作者: Y.HAYAKAWA;M.ARIVANANDHAN;H.TATSUOKA;他;大下裕史,田中 徹,齋藤勝彦,郭其新,西尾光弘
• 通讯作者: 大下裕史,田中 徹,齋藤勝彦,郭其新,西尾光弘

Influence of dopant transport rate upon photoluminescence and electrical properties of phosphorus- doped ZnMgTe layers grown by MOVPE

掺杂剂传输速率对 MOVPE 生长的磷掺杂 ZnMgTe 层光致发光和电学性能的影响

• 发表时间: 2012
• 期刊: physica status solidi (c)
• 作者: Saito;K.;Saeki;T.;Tanaka;T.;Guo;Q.X.;Nishio;M
• 通讯作者: M

Influence of dopant transport rate upon photoluminescence and electrical properties of phosphorus-doped ZnMgTe layers grown by MOVPE

掺杂剂输运速率对 MOVPE 生长磷掺杂 ZnMgTe 层光致发光和电学性能的影响

• 发表时间: 2012
• 期刊: physica status solodi
• 作者: Saito;Katsuhiko;Saeki;Takuya Tanaka;Tooru;Guo;Qixin;Nishio;Mitsuhiro
• 通讯作者: Mitsuhiro

Effect of VI/II ratio upon photoluminescence and electrical properties of phosphorus-doped ZnTe films grown by MOVPE

VI/II比对MOVPE生长磷掺杂ZnTe薄膜光致发光和电学性能的影响

• 发表时间: 2010
• 作者: M. Nishio;K. Saito;T. Tanaka;Q. Guo
• 通讯作者: Q. Guo

Light-Emitting Diodes and Optoelectronics: New Research Enhanced Efficiency of ZnTe-Based Green Light-Emitting Diodes

发光二极管和光电子学：新研究提高了 ZnTe 基绿色发光二极管的效率

• 发表时间: 2012
• 作者: Tooru Tanaka;Katsuhiko Saito;Qixin Guo;Mitsuhiro Nishio
• 通讯作者: Mitsuhiro Nishio