Development of ZnTe based heterostructure for improvement of efficiency of pure green LED

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For ZnTe and Zn_Mg_xTe, the main results on p-type doping by means of metalorganic vapor phase epitaxy, annealing treatment in nitrogen gas flow and so on were briefly summarized as follows. We reviewed our recent research results on the development of ZnTe LEDs. For ZnTe, the electrical and optical properties versus source transport rate, VI/II transport rate ratio and so on have been clarified with and without annealing treatment. P-type doping of Zn_Mg_xTe layer with a high carrier concentration has been obtained by using tris-dimethylaminophosphorus, similar to the case of ZnTe layer. The post-annealing is very effective in obtaining p-type conductive Zn_Mg_xTe for the layer grown under a Te-poor condition. On the other hand, Zn_Mg_xTe layer is characterized by a high compensation ratio for the layer grown under a Te-rich condition, even after annealing treatment. Similar tendencies are also found in P-doped ZnTe layers.