Research on fundamental technologies for processing of electronic materials by synchrotron light-excited process
同步加速器光激发加工电子材料基础技术研究
基本信息
- 批准号:16560012
- 负责人:
- 金额:$ 1.86万
- 依托单位:
- 依托单位国家:日本
- 项目类别:Grant-in-Aid for Scientific Research (C)
- 财政年份:2004
- 资助国家:日本
- 起止时间:2004 至 2006
- 项目状态:已结题
- 来源:
- 关键词:
项目摘要
Synchrotron light-excited etching of ZnTe as an example of electronic material has been demonstrated. In the case of SF_6 gas, the ZnTe was not etched but thin film of a fluorine containing material, e.g. ZnF2, was deposited on the surface of ZnTe. On the other hand, ZnTe was etched effectively by using Ar gas under the negative sample bias to the sample. The etched pattern obtained by placing a Ni mesh showed that only the irradiated area was etched. The etching mechanism has been investigated. A new beamline for the development of advanced materials and processing has been designed and constructed in order to utilize synchrotron light source built by Saga Prefectural Government. Furthermore, the processing of electronic materials containing epitaxial growth, doping, etching and annealing procedures has been carried out in our laboratory as prelimary experiments for the processing using synchrotron light.
以ZnTe为例,进行了同步辐射光激发刻蚀实验。在SF_6气体的情况下,ZnTe不被蚀刻,而是在ZnTe的表面上沉积含氟材料(例如ZnF 2)的薄膜。另一方面,通过使用Ar气体在负样品偏压下对样品进行有效地蚀刻ZnTe。通过放置镍网获得的蚀刻图案显示,只有照射区域被蚀刻。对腐蚀机理进行了研究。为了利用佐贺县政府建造的同步加速器光源,设计并建造了用于先进材料开发和加工的新光束线。此外,作为同步辐射光处理的初步实验,我们还进行了电子材料的处理,包括外延生长、掺杂、刻蚀和退火。
项目成果
期刊论文数量(31)
专著数量(0)
科研奖励数量(0)
会议论文数量(0)
专利数量(0)
Effects of substrate temperature upon photoluminescence and electrical properties of ZnTe in atmospheric pressure MOVPE using tris-dimethlaminophosphorus
基底温度对三二甲氨基磷常压 MOVPE 中 ZnTe 光致发光和电性能的影响
- DOI:
- 发表时间:2006
- 期刊:
- 影响因子:0
- 作者:Kazuki Hayashida;Tooru Tanaka;Mitsuhiro Nishio;Qixin Guo;T.Tanigawa;Hiroshi Ogawa
- 通讯作者:Hiroshi Ogawa
Design of Beamline BL9 at Saga Light Source
Saga Light Source 的光束线 BL9 设计
- DOI:
- 发表时间:2007
- 期刊:
- 影响因子:0
- 作者:Tooru Tanaka;Hiroshi Ogawa;Masao Kamada;Mitsuhiro Nishio;Masataka Masuda;Qixin Guo;Kazuki Hayashida;Yuzi Kondo;Teruaki Motooka;Daisuke Yoshimura;Hiroyuki Setoyama;Toshihiro Okajima
- 通讯作者:Toshihiro Okajima
Effect of surface treatment on properties of ZnTe LED fabricated by Al thermal diffusion
表面处理对Al热扩散ZnTe LED性能的影响
- DOI:
- 发表时间:2006
- 期刊:
- 影响因子:0
- 作者:Tooru Tanaka;Kazuki Hayashida;Katsuhiko Saito;Mitsuhiro Nishino;Qixin Guo;Hiroshi Ogawa
- 通讯作者:Hiroshi Ogawa
Study of Al thermal diffusion in ZnTe by secondary ion mass spectroscopy
二次离子质谱研究ZnTe中Al热扩散
- DOI:
- 发表时间:2007
- 期刊:
- 影响因子:0
- 作者:Tooru Tanaka;Norihiro Murata;Katsuhiko Saito;Qixin Guo;Mitsuhiro Nishio;Hiroshi Ogawa
- 通讯作者:Hiroshi Ogawa
{{
item.title }}
{{ item.translation_title }}
- DOI:
{{ item.doi }} - 发表时间:
{{ item.publish_year }} - 期刊:
- 影响因子:{{ item.factor }}
- 作者:
{{ item.authors }} - 通讯作者:
{{ item.author }}
数据更新时间:{{ journalArticles.updateTime }}
{{ item.title }}
- 作者:
{{ item.author }}
数据更新时间:{{ monograph.updateTime }}
{{ item.title }}
- 作者:
{{ item.author }}
数据更新时间:{{ sciAawards.updateTime }}
{{ item.title }}
- 作者:
{{ item.author }}
数据更新时间:{{ conferencePapers.updateTime }}
{{ item.title }}
- 作者:
{{ item.author }}
数据更新时间:{{ patent.updateTime }}
NISHIO Mitsuhiro其他文献
NISHIO Mitsuhiro的其他文献
{{
item.title }}
{{ item.translation_title }}
- DOI:
{{ item.doi }} - 发表时间:
{{ item.publish_year }} - 期刊:
- 影响因子:{{ item.factor }}
- 作者:
{{ item.authors }} - 通讯作者:
{{ item.author }}
{{ truncateString('NISHIO Mitsuhiro', 18)}}的其他基金
Development of ZnTe based heterostructure for improvement of efficiency of pure green LED
开发ZnTe基异质结构以提高纯绿色LED的效率
- 批准号:
22560299 - 财政年份:2010
- 资助金额:
$ 1.86万 - 项目类别:
Grant-in-Aid for Scientific Research (C)
Development of LED in wavelength region required improvement of efficiency using ZnTe based materials
波长区域 LED 的开发需要使用 ZnTe 基材料提高效率
- 批准号:
19560318 - 财政年份:2007
- 资助金额:
$ 1.86万 - 项目类别:
Grant-in-Aid for Scientific Research (C)
Growth and doping of ZnTe by synchrotron-radiation-excited epitaxy
同步辐射激发外延法生长和掺杂 ZnTe
- 批准号:
10650014 - 财政年份:1998
- 资助金额:
$ 1.86万 - 项目类别:
Grant-in-Aid for Scientific Research (C)
相似海外基金
First Principles Prediction of Electronic Material Properties with Unprecedented Accuracy
以前所未有的准确度对电子材料特性进行第一性原理预测
- 批准号:
2281178 - 财政年份:2019
- 资助金额:
$ 1.86万 - 项目类别:
Studentship
Electronic Material Characterisation for Applications in Triboelectric Nanogenerators
摩擦纳米发电机应用的电子材料表征
- 批准号:
1947410 - 财政年份:2017
- 资助金额:
$ 1.86万 - 项目类别:
Studentship
INVESTIGATION OF DAMAGE MECHANISM AND ESTIMATION OF STRENGTH OF CARBON NANOTUBES AS ELECTRONIC MATERIAL UNDER HIGH-DENSITY ELECTRONIC CURRENT
高密度电流作用下碳纳米管电子材料损伤机制研究及强度评估
- 批准号:
21360046 - 财政年份:2009
- 资助金额:
$ 1.86万 - 项目类别:
Grant-in-Aid for Scientific Research (B)
Fabrication and Thermomechanical Properties of Silica/Epoxy Nanocomposite as a Reliable Electronic Material
二氧化硅/环氧树脂纳米复合材料作为可靠电子材料的制备和热机械性能
- 批准号:
20760457 - 财政年份:2008
- 资助金额:
$ 1.86万 - 项目类别:
Grant-in-Aid for Young Scientists (B)
Improving silicon grain boundaries by linking electronic material quality and device manufacturing conditions
通过将电子材料质量和器件制造条件联系起来改善硅晶界
- 批准号:
DP0452375 - 财政年份:2004
- 资助金额:
$ 1.86万 - 项目类别:
Discovery Projects
Building up of concerted electronic material possessing hybridized conduction band
具有杂化导带的协同电子材料的构建
- 批准号:
15360346 - 财政年份:2003
- 资助金额:
$ 1.86万 - 项目类别:
Grant-in-Aid for Scientific Research (B)
Acquisition of a Variable-Temperature Scanning Tunneling Microscope Facility for Electronic Material and Nano- Device Design
购置用于电子材料和纳米器件设计的变温扫描隧道显微镜设备
- 批准号:
9413999 - 财政年份:1994
- 资助金额:
$ 1.86万 - 项目类别:
Standard Grant