Research on fundamental technologies for processing of electronic materials by synchrotron light-excited process

点击翻译按钮获取中文摘要

Synchrotron light-excited etching of ZnTe as an example of electronic material has been demonstrated. In the case of SF_6 gas, the ZnTe was not etched but thin film of a fluorine containing material, e.g. ZnF2, was deposited on the surface of ZnTe. On the other hand, ZnTe was etched effectively by using Ar gas under the negative sample bias to the sample. The etched pattern obtained by placing a Ni mesh showed that only the irradiated area was etched. The etching mechanism has been investigated. A new beamline for the development of advanced materials and processing has been designed and constructed in order to utilize synchrotron light source built by Saga Prefectural Government. Furthermore, the processing of electronic materials containing epitaxial growth, doping, etching and annealing procedures has been carried out in our laboratory as prelimary experiments for the processing using synchrotron light.