Growth and doping of ZnTe by synchrotron-radiation-excited epitaxy

直到现在，我们已经实验了，这种综合辐射兴奋的增长被认为是一种非热外延技术。由于覆盖了世界，我们已经证明了复合半导体（ZnTe）的外延生长和原子层的外延生长可以在使用同步加速器辐射的房间温度中实现。这是一个很大的重要性，因为对物理财产控制的可能性进行了调查，以便在这项研究中得到发展。本研究的主要目的是调查确定ZnTe薄膜的生长特征和光致发光特性由synchron-radiation-excited growth with and without impurity addition。同步加速器辐射（BL-8A白光）在UVSOR设施中被用作光源。Growth has been carried out at a very low pr\of l0 -5-D1 Torr in order to suppress the gas phase reaction。基本增长参数，如VI/II运输率、底层温度和载体气体的类型。 ... More 在ZnTe films中，有不同的方法可以检测系统影响到增长特征（增长率增长条件可变HREED表面状态晶体）和晶体质量（主要，光光度属性）。在房间温度范围-l00 ℃的基底温度范围内，比预cursor源的温度范围内的温度范围要低得多，而是被选择用于演示synchronotron辐射的利用。根据结果，我们获得了有关增长特征的详细信息。由于晶体质量，它是明确的，因为碳不是从预cursor源中产生的，而是被纳入ZnTe生长层的生长参数。与VI/II运输率相比，晶体质量发生了巨大变化。这是有可能阻止与深层发射带相关的，因为它在一个更丰富的条件下被破坏。此外，还有一种可能性，即P型与硝基载体气体的掺杂，自接受器相关的绑定exciton可以预测在光致光谱中。Less（低）

Until now, we have shown experimentally that syndrotron-radiation-excited growth is very promising as a non-thermal epitaxial technique. By heralding the world, we have demonstrated that epitaxial growth and atomic layer epitaxy of compound semiconductor (ZnTe) can be realized at room temperature using the synchrotron radiation. It is of great importance that the possibility of the physical property control is examined in order to develop this research. The main purpose of this study is to investigate detailed growth characteristics and photoluminescence properties of ZnTe films grown by synchrotron-radiation-excited growth with and without the impurity addition. Synchrotron radiation ( BL-8A White light ) in UVSOR facility was utilized as a light source. Growth has been carried out at a very low pressure of l0ィイD1-5ィエD1 Torr in order to suppress the gas phase reaction. Basic growth parameters such as VI/II transport rate ratio and substrate temperature and the types of carrier gases w … More ere varied to investigate systematic influence upon growth characteristics (growth rate growth condition variously HREED surface state crystallinity) and crystal quality (mainly, photoluminescence property) of ZnTe films. The substrate temperature range of room temperature-l00℃, which is much lower than the temperature rang for pyrolysis of precursor sources, is chosen to demonstrate usefulness of the utilization of the synchrotron radiation. As the result, we have obtained detailed information on growth characteristics. As for the crystal quality, it is clarified that carbon coming from the precursor sources not incorporated into ZnTe grown layer independent of growth parameters. The crystal quality greatly changes with VI/II transport rate ratio. It is possible to suppress the deep-level emission band associated with defects under a Te rich condition. Also, there is the possibility of p-type doping with the nitrogen carrier gas, since acceptor-related bound exciton is observed predominantly in the photoluminescence spectrum. Less