Growth and doping of ZnTe by synchrotron-radiation-excited epitaxy

同步辐射激发外延法生长和掺杂 ZnTe

• 批准号: 10650014
• 负责人: NISHIO Mitsuhiro
• 金额: $ 1.79万
• 依托单位: Saga University
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for Scientific Research (C)
• 财政年份: 1998
• 资助国家: 日本
• 起止时间: 1998 至 1999
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-10650014/
• 关键词: Synchrotron-radiation-excited epitaxy; Low temperature growth; Zinc Telluride; Photoluminesence property; Growth characteristic; 低温成長

Until now, we have shown experimentally that syndrotron-radiation-excited growth is very promising as a non-thermal epitaxial technique. By heralding the world, we have demonstrated that epitaxial growth and atomic layer epitaxy of compound semiconductor (ZnTe) can be realized at room temperature using the synchrotron radiation. It is of great importance that the possibility of the physical property control is examined in order to develop this research. The main purpose of this study is to investigate detailed growth characteristics and photoluminescence properties of ZnTe films grown by synchrotron-radiation-excited growth with and without the impurity addition. Synchrotron radiation ( BL-8A White light ) in UVSOR facility was utilized as a light source. Growth has been carried out at a very low pressure of l0ィイD1-5ィエD1 Torr in order to suppress the gas phase reaction. Basic growth parameters such as VI/II transport rate ratio and substrate temperature and the types of carrier gases w … More ere varied to investigate systematic influence upon growth characteristics (growth rate growth condition variously HREED surface state crystallinity) and crystal quality (mainly, photoluminescence property) of ZnTe films. The substrate temperature range of room temperature-l00℃, which is much lower than the temperature rang for pyrolysis of precursor sources, is chosen to demonstrate usefulness of the utilization of the synchrotron radiation. As the result, we have obtained detailed information on growth characteristics. As for the crystal quality, it is clarified that carbon coming from the precursor sources not incorporated into ZnTe grown layer independent of growth parameters. The crystal quality greatly changes with VI/II transport rate ratio. It is possible to suppress the deep-level emission band associated with defects under a Te rich condition. Also, there is the possibility of p-type doping with the nitrogen carrier gas, since acceptor-related bound exciton is observed predominantly in the photoluminescence spectrum. Less

到目前为止，我们已经在实验上证明了合成辐射激发生长作为一种非热外延技术是非常有前途的。在世界范围内，我们证明了利用同步辐射可以在室温下实现化合物半导体(ZnTe)的外延生长和原子层外延。为了开展这方面的研究，对物性控制的可能性进行研究具有重要意义。本研究的主要目的是研究掺杂前后同步辐射激发生长的ZnTe薄膜的生长特性和光致发光特性。采用UVSOR装置中的同步辐射(BL-8A白光)作为光源。为了抑制气相反应，在10ィイD_1-5ィエD_1Torr的极低气压下进行了生长。基本生长参数，如VI/II传输速率比和衬底温度以及载流子气体类型w…更详细地考察了系统地影响薄膜的生长特性(生长速度、生长条件、表面状态、结晶度)和晶体质量(主要是光致发光性能)的因素。选择的衬底温度范围为室温-100℃，远低于前驱体热解的温度范围，以证明同步辐射的利用是有效的。因此，我们获得了有关生长特征的详细信息。对于晶体质量，澄清了来自前驱体的碳没有被掺入到生长层中，而与生长参数无关。晶体质量随VI/II输运速率比的变化而变化。在富Te条件下，有可能抑制与缺陷相关的深能级发射带。此外，由于在光致发光光谱中主要观察到与受主相关的束缚激子，因此存在与氮载流子的p型掺杂的可能性。较少

项目成果

Mitsuhiro NISHIO, Takeshi ENOKI, Yoshiaki MITSUISHI, Qixin GUO and Hiroshi OGAWA: "Homoepitaxial growth of ZnTe by synchrotron radiation using metalorganic sources"UVSOR ACTIVITY REPORT 1998. UVSOR-26. 195-196 (1999)

Mitsuhiro NISHIO、Takeshi ENOKI、Yoshiaki MITSUISHI、Qixin GUO 和 Hiroshi OGAWA：“使用金属有机源通过同步辐射进行 ZnTe 的同质外延生长”UVSOR 活动报告 1998。UVSOR-26。

K.Hayashida, M.Nishio, S.Furukawa, Qixin Guo and H.Ogawa: "Effects of wavelength upon photoluminescene properties of ZnTe layers grown by photoassisted MOVPE"J. Crystal Growth. (in press). (2000)

K.Hayashida、M.Nishio、S.Furukawa、QixinGuo 和 H.Okawa：“波长对光辅助 MOVPE 生长的 ZnTe 层的光致发光特性的影响”J。

M.Nishio,Q.Guo,H.Ogawa: "Ohmic contucts to p-type ZnTe using electroless Pd"Thin Solid Films. 343-344. 508-511 (1999)

M.Nishio、Q.Guo、H.Okawa：“使用化学镀 Pd 实现 p 型 ZnTe 的欧姆接触”固体薄膜。

Q.X.Gou: "Energy loss spectrum of AlN in the 6-120 eV region" Journal of Crystal Growth. 189/190. 457 (1998)

Q.X.Gou：“AlN 在 6-120 eV 区域的能量损失谱”《晶体生长杂志》。

Mitsuhiro Nishio, Kazuki Hayashida, Qixin Guo and Hiroshi Ogawa: "Low temperature epitaxial growth of II-VI compound semiconductors using synchrotron radiation as a light source"Current Topics in Crystal Growth Research. 5. 1-26 (1999)

Mitsuhiro Nishio、Kazuki Hayashida、Qixin Jing和Hiroshi Okawa：“使用同步辐射作为光源的II-VI族化合物半导体的低温外延生长”晶体生长研究的当前主题。