Band-gap states and quality analyses of AlGaN/GaN hetero-structures

AlGaN/GaN 异质结构的带隙态和质量分析

• 批准号: 22560309
• 负责人: NAKANO Yoshitaka
• 金额: $ 2.83万
• 依托单位: Chubu University
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for Scientific Research (C)
• 财政年份: 2010
• 资助国家: 日本
• 起止时间: 2010 至 2012
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-22560309/
• 关键词: 電気・電子材料; 窒化物半導体; 半導体物性; 結晶工学; 電子・電気材料; AlGaN/GaNヘテロ構造; 半導体欠陥準位; 結晶成長; スイッチング特性; 欠陥準位; 残留炭素; MOCVD結晶成長; フォトキャパシタンス; DLOS; 電流コラプス; イエローバンド; MOCVD

In conventional AlGaN/GaN hetero-structures grown by MOCVD, the C impurity incorporation was enhanced with decreasing the growth temperature of the GaN buffer layer between 1120 and 1170℃. Concurrently, deep-level defects became dense at2.07, 2.80, and 3.23eV below the conduction band, presumably attributable to Ga vacancies and shallow C acceptors in the GaN buffer layer. Among them, the 2.80 and 3.23eV levels are found to be strongly responsible for the carrier-trapping phenomena in the AlGaN/GaN hetero-structures.

在MOCVD生长的AlGaN/GaN异质结构中，在1120 ~ 1170℃之间，随着GaN缓冲层生长温度的降低，C杂质的掺入量增加。同时，深能级缺陷在导带以下2.07、2.80和3.23eV处变得密集，推测可归因于GaN缓冲层中的Ga空位和浅C受主。其中2.80和3.23eV能级是AlGaN/GaN异质结中载流子俘获现象的主要原因。

项目成果

Correlation between Deep-Level Defects and Current Collapses in AlGaN/GaN Hetero-Structures

AlGaN/GaN 异质结构中深层缺陷与电流崩塌之间的相关性

• 发表时间: 2012
• 作者: Masaaki Futamoto;Tatsuya Hagami;Shinji Ishihara;Kazuki Soneta;and Mitsuru Ohtake;Y.Nakano
• 通讯作者: Y.Nakano

Effect of Carbon Impurity Incorporation on Band-Gap States in AlGaN/GaN Hetero-Structures

• DOI: 10.1149/2.025202esl
• 发表时间: 2011
• 期刊: Electrochemical and Solid State Letters
• 作者: Y. Nakano;Y. Irokawa;Y. Sumida;S. Yagi;H. Kawai

Photo‐capacitance spectroscopy investigation of deep‐level defects in AlGaN/GaN hetero‐structures with different current collapses

• DOI: 10.1002/pssr.201004421
• 发表时间: 2010-12
• 期刊: physica status solidi (RRL) – Rapid Research Letters
• 作者: Y. Nakano;Y. Irokawa;Y. Sumida;S. Yagi;H. Kawai

Correlation between Current Collapses and Deep-Level Defects in AlGaN/GaN Hetero -Structures Probed by Photo-Capacitance Spectroscopy

AlGaN/GaN 异质结构中电流崩塌与深层缺陷之间的相关性 - 通过光电容光谱探测结构

• 发表时间: 2011
• 作者: Y.Nakano;Y.Irokawa;Y.Sumida;S.Yagi;H.Kawai
• 通讯作者: H.Kawai

Correlation between turn-on recovery characteristics and deep-level defects in AlGaN/GaN hetero-structures

AlGaN/GaN异质结构中导通恢复特性与深能级缺陷的相关性

• 发表时间: 2012
• 作者: Y.Nakano;Y.Irokawa;Y.Sumida;S.Yagi;H.Kawai
• 通讯作者: H.Kawai