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Electronic Structure and Impurity Concentration for Conducting Region of Proton Conductor by Soft-X-ray Spectroscopy

Electronic Structure and Impurity Concentration for Conducting Region of Proton Conductor by Soft-X-ray Spectroscopy
用软X射线光谱法研究质子导体导电区的电子结构和杂质浓度
批准号:
22560670
负责人:
HIGUCHI Tohru
金额:
$2.75万
依托单位:
依托单位国家:
日本
项目类别:
Grant-in-Aid for Scientific Research (C)
财政年份:
2010
资助国家:
日本
项目状态:
已结题
起止时间:
2010 至 2012

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中文摘要
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英文摘要
The electronic structure ofproton conductor BaCe0.9Y0.1O3.8 hin film prepared by RF magnetron sputtering have probed by soft-X-ray spectroscopy. The thin film was crystallized at 500℃, which corresponds to the temperature region of proton conduction. The proton conductivity of the thin film accords with that of the bulk crystal. The hole and acceptor level were observed in the band gap region by X-ray absorption spectroscopy. The oxygen defect-induced state was also observed at the bottom of the conduction band. From the quantitative analysis, the author have clarified that hole of 30% and oxygen vacancy of 70% is created in the crystal lattice against of acceptor concentration.
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Structural and Electrical Properties of BaCe0.9Y0.1O3-dThin Film on Al2O3 Substrate
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