Electronic Structure and Impurity Concentration for Conducting Region of Proton Conductor by Soft-X-ray Spectroscopy

用软X射线光谱法研究质子导体导电区的电子结构和杂质浓度

• 批准号: 22560670
• 负责人: HIGUCHI Tohru
• 金额: $ 2.75万
• 依托单位: Tokyo University of Science
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for Scientific Research (C)
• 财政年份: 2010
• 资助国家: 日本
• 起止时间: 2010 至 2012
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-22560670/
• 关键词: 軟エックス線発光分光; プロトン伝導体; 電子構造; 不純物濃度; 酸素欠損; 価電子帯; 混成軌道; 結合距離; プロトン導電体; 酸素欠陥

The electronic structure ofproton conductor BaCe0.9Y0.1O3.8 hin film prepared by RF magnetron sputtering have probed by soft-X-ray spectroscopy. The thin film was crystallized at 500℃, which corresponds to the temperature region of proton conduction. The proton conductivity of the thin film accords with that of the bulk crystal. The hole and acceptor level were observed in the band gap region by X-ray absorption spectroscopy. The oxygen defect-induced state was also observed at the bottom of the conduction band. From the quantitative analysis, the author have clarified that hole of 30% and oxygen vacancy of 70% is created in the crystal lattice against of acceptor concentration.

用软X射线能谱研究了射频磁控溅射制备的质子导体BaCe_（0.9）Y_（0.1）O_（3.8）薄膜的电子结构。薄膜在500℃时晶化，这一温度区对应于质子传导的温度区。薄膜的质子导电性与体晶体的质子导电性一致。通过X射线吸收光谱，在带隙区观察到空穴和受主能级。在导带底部还观察到氧缺陷诱导态。定量分析表明，随着受主浓度的增加，晶格中产生了30%的空穴和70%的氧空位。

项目成果

Structural and Electrical Properties of BaCe0.9Y0.1O3-dThin Film on Al2O3 Substrate

Al2O3 基底上 BaCe0.9Y0.1O3-d 薄膜的结构和电学性能

• 发表时间: 2011
• 作者: T. Owaku;H. Fukawa;and T. Higuchi
• 通讯作者: and T. Higuchi

Valence State of BaCe1-YxO3 Ceramic by Soft-X-Ray Spectroscopy

通过软 X 射线光谱法研究 BaCe1-YxO3 陶瓷的价态

• 发表时间: 2010
• 作者: H. Kato;D. Ogawa;and K. Koike;T. Higuchi,H. Fukawa and H. Takahashi 1
• 通讯作者: T. Higuchi,H. Fukawa and H. Takahashi 1

Electronic Structure of La_<0.6>Sr_<0.4>FeO_3/MgO Thin Film by Soft-X-Ray Spectroscopy

软X射线能谱研究La_<0.6>Sr_<0.4>FeO_3/MgO薄膜的电子结构

• 发表时间: 2010
• 作者: T.Higuchi;M.Matsumoto;W.Yang;P.Velasco;J.Chen;Y.Liu;J.Guo
• 通讯作者: J.Guo

軟X線分光によるKH_2PO_4単結晶の電子構造解析II

软X射线光谱法分析KH_2PO_4单晶的电子结构II

• 发表时间: 2010
• 作者: 仁科哲也;樋口透;福永正則;馬込栄輔;J.Guo;小向得優
• 通讯作者: 小向得優

Valence States of BaCe_<1-x>Y_xO_<3-d> Ceramics by Soft-X-Ray Spectroscopy

软 X 射线光谱法研究 BaCe_<1-x>Y_xO_<3-d> 陶瓷的价态

• 发表时间: 2011
• 期刊: Trans.Mater.Res.Soc.Jpn.
• 作者: T.Higuchi;H.Fukawa;H.Takahashi
• 通讯作者: H.Takahashi