Electronic Structure and Impurity Concentration for Conducting Region of Proton Conductor by Soft-X-ray Spectroscopy

用软x射线能谱仪对射频磁控溅射法制备的质子导体BaCe0.9Y0.1O3.8 hin薄膜的电子结构进行了探测。薄膜在500℃下结晶，对应于质子传导的温度区域。薄膜的质子电导率与本体晶体的质子电导率一致。用x射线吸收光谱法在带隙区观察了空穴和受体能级。在导带底部也观察到氧缺陷诱导态。定量分析表明，随着受体浓度的变化，晶格中会产生30%的空穴和70%的氧空位。

The electronic structure ofproton conductor BaCe0.9Y0.1O3.8 hin film prepared by RF magnetron sputtering have probed by soft-X-ray spectroscopy. The thin film was crystallized at 500℃, which corresponds to the temperature region of proton conduction. The proton conductivity of the thin film accords with that of the bulk crystal. The hole and acceptor level were observed in the band gap region by X-ray absorption spectroscopy. The oxygen defect-induced state was also observed at the bottom of the conduction band. From the quantitative analysis, the author have clarified that hole of 30% and oxygen vacancy of 70% is created in the crystal lattice against of acceptor concentration.