Investugation of Electro-migration Behavior in Solder Joints
Investugation of Electro-migration Behavior in Solder Joints
批准号:
22560722
负责人:
UENISHI Keisuke
金额:
$2.5万
依托单位:
依托单位国家:
日本
项目类别:
Grant-in-Aid for Scientific Research (C)
财政年份:
2010
资助国家:
日本
项目状态:
已结题
起止时间:
2010-10-20 至 2013-03-31
中文摘要
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英文摘要
Electro-migration behavior was investigate for Sn-Ag based and Sn-Bi solder joints. Unlike in homogenious materials such as wiring materials, EM behavior was confirmed to change by the materials compoistion and current charging conditions. Such differences was clarified to be due to changes in critical current and velocity of EM in each element.Based on above obtained knowleges, exsistence of intermetallic compound or Ag barrier layer was investigated to be effective in order to surpress the EM in solder joints.
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Sn-Bi共晶はんだとNi/Au電極との界面反応と強度に及ぼすZn添加の影響
Zn添加对Sn-Bi共晶焊料与Ni/Au电极界面反应及强度的影响
DOI:
--
发表时间:
2013
期刊:
ate2013 「エレクトロニクスにおけるマイクロ接合・実装技術」シンポジウム論文集
影响因子:
--
作者:
[安藤智弥, 岡本圭史郎, 赤松俊也, 作山誠樹, 上西啓介]
通讯作者:
上西啓介
Sn-Bi共晶はんだを用いた微細はんだ接合部のエレクトロマイグレーション挙動に及ぼすバリア層の影響
阻挡层对 Sn-Bi 共晶焊料微焊点电迁移行为的影响
DOI:
--
发表时间:
2012
期刊:
第22回マイクロエレクトロニクスシンポジウム(MES2012)論文集
影响因子:
--
作者:
[酒井徹, 八坂健一, 赤松俊也, 今泉延弘, 岡本圭史郎, 作山誠樹, 上西啓介]
通讯作者:
上西啓介
Sn-Ag-Bi-In系はんだのBGA接合信頼性評価
Sn-Ag-Bi-In焊料的BGA键合可靠性评估
DOI:
--
发表时间:
2013
期刊:
Mate2013 「エレクトロニクスにおけるマイクロ接合・実装技術」シンポジウム論文集
影响因子:
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作者:
[酒谷茂昭, 日根清裕, 森将人, 古澤彰男, 上西啓介]
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上西啓介
導電・絶縁材料の電気および熱伝導特性制御
导电和绝缘材料的导电和导热性能的控制
DOI:
--
发表时间:
2013
期刊:
影响因子:
--
作者:
[春山純志]
通讯作者:
春山純志
Effect of preformed IMC Layer on Electromigration of Peripheral Ultra Fine Pitch C2 Flip Chip Interconnection with Solder Capped Cu Pillar Bump
预制 IMC 层对带有焊料盖帽铜柱凸块的外围超细间距 C2 倒装芯片互连电迁移的影响
DOI:
--
发表时间:
2011
期刊:
Proc. of International Micorsystems, Packaging, Assembly and Circuit Technology Conference 2011 (IMPACT2011)
影响因子:
--
作者:
[Y.Orii, K.Toriyama, S.Kohara, H.Noma, K.Okamoto, D.Toyoshima and K.Uenishi]
通讯作者:
D.Toyoshima and K.Uenishi
共 19 条
Effect of Third Element Addition on Eutectic Microstructure of Lead Free Low Temperature Sn-Bi Based Solders
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批准号:19560728
-
项目类别:Grant-in-Aid for Scientific Research (C)
-
资助金额:$3.0万
-
财政年份:2007
-
负责人:UENISHI Keisuke
-
依托单位:
Dvelopment of Sn-Bi Based Low Temperature Solders which Enables Step Soldering
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批准号:17560633
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项目类别:Grant-in-Aid for Scientific Research (C)
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资助金额:$2.3万
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财政年份:2005
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负责人:UENISHI Keisuke
-
依托单位:
Control of Interfacial Reaction in the Dissimilar Joints Using Shape Memory Alloy Thin Wires for the Fabrication of Medical Devices Inserted in Blood Vessel
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批准号:14550703
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项目类别:Grant-in-Aid for Scientific Research (C)
-
资助金额:$2.3万
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财政年份:2002
-
负责人:UENISHI Keisuke
-
依托单位:
海外基金