Controlling the size and quantity of defects on carbon materials

控制碳材料缺陷的尺寸和数量

• 批准号: 22760594
• 负责人: YAMADA Yasuhiro
• 金额: $ 2.66万
• 依托单位: Chiba University
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for Young Scientists (B)
• 财政年份: 2010
• 资助国家: 日本
• 起止时间: 2010 至 2011
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-22760594/
• 关键词: 炭素材料; グラフェン; 欠陥; カーボンナノチューブ; フラーレン; 制御; 酸素; エポキシ化; 黒鉛; ナノカーボン

Vacancy defects were introduced by oxidizing nanocarbon materials with oxygen and m-chloroperoxybenzoic acid, followed by heat treatment. To control the size of the vacancy defect, the defect structure was analyzed in detail by transmission electron microscope, X-ray photoelectron spectroscopy, and density functional theory's calculation. As a result, oxidation by oxygen proceeds even below 250 degree C, and carbon monoxide and carbon dioxide and vacancy defects were formed via carbonyl and lactone groups. By epoxidization of fullerene, epoxy, carbonyl, and lactone groups were formed. The amount of epoxy and lactone groups were reduced, and carbonyl and carbone were remained. Vacancy defects were observed using transmission electron microscope, but the proof that the vacancy defects were created by heat treatment is necessary in the future.

空位缺陷是通过用氧和间氯过氧苯甲酸氧化纳米碳材料，然后热处理引入的。为了控制空位缺陷的尺寸，通过透射电子显微镜、X射线光电子能谱和密度泛函理论计算对缺陷结构进行了详细的分析。结果，即使在低于250 ℃的温度下，氧的氧化也进行，并且经由羰基和内酯基团形成一氧化碳和二氧化碳以及空位缺陷。通过富勒烯的环氧化，形成环氧基、羰基和内酯基。环氧基和内酯基减少，羰基和碳酮保留。用透射电子显微镜观察到空位缺陷，但证明空位缺陷是由热处理产生的是必要的，在未来。

项目成果

Introducing defects on fullerene through epoxidation

通过环氧化在富勒烯上引入缺陷

• 发表时间: 2011
• 作者: J. Kim;Y. Yamada;T. Sodesawa;S. Sato
• 通讯作者: S. Sato

ナノカーボンにおける欠陥制御、3C07

纳米碳的缺陷控制，3C07

• 发表时间: 2010
• 作者: 室田和成;山田泰弘;袖澤利昭;佐藤智司
• 通讯作者: 佐藤智司

ナノカーボンにおける欠陥制御

纳米碳的缺陷控制

• 发表时间: 2010
• 作者: 室田和成、山田泰弘;他2名
• 通讯作者: 他2名