Characterization for the atomic structures and electric structures on the GaN substrates during device fabrication process

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Based on the systematically investigation, the surface cleaning method for GaN substrate surface has been developed. Clean and atomically flat GaN(0001) surface was successfully formed by the combination of wet etching and annealing in ultra-high vacuum, which should be general cleaning method for GaN. By removing the native oxide and damaged layer, which would be the centers for non-irradiation states, about 120 times intense band-to-band peak intensity was achieved.