Development of new concept solar cell by utilizing natural superlattice
Development of new concept solar cell by utilizing natural superlattice
批准号:
22656144
负责人:
YANAGI Hiroshi
金额:
$2.22万
依托单位:
依托单位国家:
日本
项目类别:
Grant-in-Aid for Challenging Exploratory Research
财政年份:
2010
资助国家:
日本
项目状态:
已结题
起止时间:
2010 至 2011
中文摘要
CuO_2晶体结构是由垂直于c轴的p层和n层堆叠而成,因此被选为新概念太阳能电池的候选材料。我们用射频溅射方法制备了c轴垂直于衬底表面而不平行于衬底表面的CuInO2薄膜:平行薄膜仅用PLD方法制备。遗憾的是,我们不能展示新概念的含CuO_2的太阳电池,但是,用UPS测定了CuO_2的两个重要参数--电离势和电子亲和势,从而揭示了CuO_2双极导电的起源。
英文摘要
CuInO_2 was selected as a candidate material for new concept solar cell because its crystal structure is composed of stacking of p-and n-layers perpendicular to its c-axis. We have prepared CuInO2 films whose c-axis perpendicular to substrate surface but not parallel ones by RF sputtering method : The parallel films were only prepared by using PLD method. Unfortunately, we could not demonstrate new concept solar cell with CuInO_2, however, important two parameters of CuInO_2, ionization potential and electron affinity, were determined by UPS and the origin of the bipolar conduction in CuInO_2 has been revealed.
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両極性酸化物半導体CuInO_2のバンドダイアグラム
双极性氧化物半导体CuInO_2能带图
DOI:
--
发表时间:
2011
期刊:
影响因子:
--
作者:
[高木暢人,柳博,金聖雄,細野秀雄]
通讯作者:
高木暢人,柳博,金聖雄,細野秀雄
Electronic Structures of p-type Cu_2O and Delafossite-Type Oxides Studied by Photoelectron Spectroscopy
光电子能谱研究p型Cu_2O和铜铁矿型氧化物的电子结构
DOI:
--
发表时间:
2011
期刊:
影响因子:
--
作者:
[Hiroshi Yanagi, Risa Yoshihara, Nobuhito Takagi, Toshio Kamiya, and Hideo Hosono]
通讯作者:
and Hideo Hosono
Band Diagram of Bipolar Oxide Semiconductor : CuInO2
双极性氧化物半导体的能带图:CuInO2
DOI:
--
发表时间:
2011
期刊:
影响因子:
--
作者:
[Nobuhito Takagi, Hiroshi Yanagi, Sung Wng Kim and Hideo Hosono]
通讯作者:
Sung Wng Kim and Hideo Hosono
Band Diagram of Bipolar Oxide Semiconductor : CuInO_2
双极性氧化物半导体的能带图:CuInO_2
DOI:
--
发表时间:
2011
期刊:
影响因子:
--
作者:
[Nobuhito Takagi, Hiroshi Yanagi, Sung Wng Kim and Hideo Hosono, Nobuhito Takagi]
通讯作者:
Nobuhito Takagi
Development of the solar cells using the ferroelectric semiconductor heterointerface
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批准号:24760545
-
项目类别:Grant-in-Aid for Young Scientists (B)
-
资助金额:$2.91万
-
财政年份:2012
-
负责人:YANAGI Hiroshi
-
依托单位:
Defect control in p-type oxide semiconductor for device application
-
批准号:21686061
-
项目类别:Grant-in-Aid for Young Scientists (A)
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资助金额:$17.97万
-
财政年份:2009
-
负责人:YANAGI Hiroshi
-
依托单位:
海外基金