Development of process equipment for deposition of amorphous carbon films by pulsed plasmas with high plasma density

高等离子体密度脉冲等离子体沉积非晶碳薄膜工艺装备的研制

• 批准号: 23560324
• 负责人: KIMURA TAKASHI
• 金额: $ 3.41万
• 依托单位: Nagoya Institute of Technology
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for Scientific Research (C)
• 财政年份: 2011
• 资助国家: 日本
• 起止时间: 2011 至 2013
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-23560324/
• 关键词: アモルファスカ－ボン; パルスプラズマ; 反応性プラズマ; パルスパワー; アモルファスカーボン; 化学反応性プラズマ; マグネトロンスパッタ; ダイヤモンドライクカーボン; 誘導性結合プラズマ

Amorphous carbon films have several applications in various industrial areas. In this study, thin amorphous carbon films are deposited by pulsed plasmas with high plasma density such as high power impulse magnetron sputtering (HiPIMS). The hardness of the films deposited by argon HiPIMS is higher than that deposited by direct current magnetron sputtering and the maximum reaches 18GPa. Moreover, thin amorphous carbon films are deposited by HiPIMS containing reactive gases in order to achieve further improvement of the film properties. Thin amorphous carbon nitride films are deposited by argon/nitrogen HiPIMS. The hardness of the films at the nitrogen fraction of 2.5% is about 1.3 times higher than that without nitrogen. Amorphous hydrogenated carbon films are also deposited by reactive argon/methane HiPIMS. This method includes both physical vapor deposition and plasma enhanced chemical vapor deposition. Deposition rate abruptly increases with the increase in methane fraction.

无定形碳膜在各种工业领域中具有若干应用。本研究利用高功率脉冲磁控溅射（HiPIMS）等高密度脉冲等离子体沉积非晶碳薄膜。氩离子溅射沉积的薄膜硬度高于直流磁控溅射沉积的薄膜，最高可达18 GPa。此外，薄的非晶碳膜的沉积HiPIMS含有反应气体，以实现进一步改善的膜的性能。采用氩/氮HiPIMS方法制备了非晶氮化碳薄膜。当氮含量为2.5%时，薄膜的硬度是不含氮时的1.3倍。非晶氢化碳薄膜也沉积反应氩/甲烷HiPIMS。该方法包括物理气相沉积和等离子体增强化学气相沉积。沉积速率随甲烷含量的增加而急剧增加。

项目成果

Deposition of amorphous carbon films by inductively coupled CH4 plasmas

电感耦合 CH4 等离子体沉积非晶碳膜

• 作者: 難波晃平;横水康伸;松村年郎;Takashi Kimura
• 通讯作者: Takashi Kimura

高出力パルスマグネトロンスパッタリングによるカーボンイオンの高密度生成

高功率脉冲磁控溅射高密度生成碳离子

• 发表时间: 2013
• 作者: Masato Nakamura;Junya Sekikawa;木村高志
• 通讯作者: 木村高志

Properties of inductively coupled rf CH_4/H_2 plasmas : experiments and global model

电感耦合射频CH_4/H_2等离子体的特性：实验和全局模型

• 发表时间: 2012
• 期刊: Japanese Journal of Applied Physics
• 影响因子: 1.5
• 作者: 中村真人;関川純哉;T. Kimura and H. Kasugai
• 通讯作者: T. Kimura and H. Kasugai

Deposition of diamond-like-carbon films by high power pulsed magnetron sputtering

高功率脉冲磁控溅射沉积类金刚石碳薄膜

• 发表时间: 2011
• 作者: 小野 仁;関川純哉;窪野隆能;T. Kimura and M. Iida
• 通讯作者: T. Kimura and M. Iida

Deposition of amorphous carbon films by inductively coupled CH_4 plasmas

电感耦合CH_4等离子体沉积非晶碳薄膜

• 发表时间: 2012
• 作者: Masato Nakamura;Junya Sekikawa;Takashi Kimura and Ryotaro Nishimura;Junya Sekikawa;Takashi Kimura
• 通讯作者: Takashi Kimura