Zinc oxide transparent transistor and its application to stacked image sensor

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The aim of this research is to achieve transparent thin-film transistor by using wide-gap oxide semiconductors. Based on the analysis of the influence of lattice defects existing in an oxide semiconductor bulk and at an interface between insulator and oxide semiconductor on electrical properties and reliability of the transistor, we investigated the defect passivation method of oxide semiconductors.As a consequence of this research, transparent thin-film transistor, which was not influenced by visible light irradiation, could be achieved, and the stacked organic image sensor has been successively demonstrated with transparent signal readout circuits.