Formation of dislocation-free germanium on strain-induced silicon substrate

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A method to decrease the dislocation density in Ge grown on Si substrate was examined. Introducing a tensile lattice strain at the Si surface with a stressor of patterned SiN_x film, the lattice mismatch between Ge and Si was reduced, leading to a possible decrease of the dislocation density in Ge. Using a double layer mask of a SiO_2 layer on the SiN_x stressor, a perfect selective growth of Ge was realized on the exposed region of Si surface, although the threading dislocation density was10^9 cm^-2, being similar to those for the growth with SiO_2 masks.