Development of light emitting devices in 1. 5μm range using germanium epitaxial layers on silicon

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Using Ge epitaxial layers on Si substrate, light-emitting devices were studied in the 1. 55μm range by a current injection. Light emission was observed in the 1. 55μm range due to the direct transition induced by a current injection into Ge pin diodes on Si. In order to increase the efficiency of light emission, it should be important to realize an injection of electrons into the conduction band at theΓvalley of Ge, followed by the recombination with holes in the valence band. A structure of n-GaAs/i-Ge/p-Si was investigated, where GaAs with the conduction band minimum at theΓvalley can be used for the electron injection.