Bipolar resistance switching in magnetic films for the memristive device application

最近，金属氧化物的双极电阻切换已经被识别为忆阻器和/或忆阻器件的物理示例。忆阻开关行为的基本机制仍然知之甚少，尽管已经提出了各种电阻开关机制的模型。为了满足下一代忆阻器件的应用需求，需要对忆阻开关的起源有一个全面的了解。本文研究了钙钛矿锰氧化物薄膜在忆阻器件中的双极电阻开关机理。阻抗谱测量表明，界面电阻显着依赖于在膜中的掺杂浓度。通过椭圆偏振光谱分析发现了介电函数与电阻开关行为之间的相关性。通过等离子体辅助减少膜表面，降低了电阻切换所需的电压。

Recently, bipolar resistance switching of metal oxide has been identified as being physical examples of memristors and/or memristive devices. The underlying mechanism of the memristive switching behavior is still poorly understood, although there have been various proposed models of the resistance switching mechanism. The comprehensive understanding for the origin of the memristive switching is required to meet the requirement for the next-generation memristive device application. In this work, the mechanism of bipolar resistance switching was investigated in perovskite manganite films for memristive devices. Impedance spectroscopic measurements indicated that the interface resistance significantly depends on the dopant concentration in the film. The correlation between dielectric function and resistance switching behavior was found by spectroscopic ellipsometry. The voltage required for resistance switching was reduced by plasma-assisted reduction of the film surface.