Nitrogen δ doping into GaAs and development of efficient surface emitting devices

半导体中的稀杂质掺杂由于其独特的电子结构，可以应用于制造最终均匀的量子点。这些点有望用于基于激子和光子之间相互作用的设备中。我们开发了氮δ掺杂GaAs的新技术，并阐明了与氮对结合的激子精细结构的光学性质。此外，还提出了实现高效光子发射的器件结构。

Dilute impurity doping in semiconductors can be applied to fabricate ultimately uniform quantum dots because of their unique electronic structure. These dots are expected to be used in devices based on the interactions between excitons and photons. We developed a novel technique of nitrogen delta-doping into GaAs and clarify the optical properties of the exciton fine structure bound to nitrogen pairs. Furthermore, the device structure achieving efficient photon emission has been proposed.