Development of cathodoluminescence nanospectroscopy for the insulating nanostructures

在分析电子显微镜中使用低能电子束（~1 keV）显著降低了半绝缘宽带隙材料的表面电荷，并实现了高空间分辨率。研制了1 keV的阴极发光扫描电镜系统，实现了无金属涂层半绝缘材料的阴极发光纳米光谱研究。我们也观察到氧化锌奈米棒单晶的生长方向区域，并观察到应变引起的氧化锌能带收缩。

Use of low energy electron beam (~1 keV) in analytical electron microscopy significantly reduces the surface charge-up of semi-insulating wide bandgap materials and realizes high spatial resolution. We developed SEM-cathodoluminescence (CL) system for 1keV observation and realized CL nanospectroscopy of semi-insulating materials without metal-coating. We also visualized growth direction domains within ZnO nanorod single crystal and observed strain-induced bandgap shrinkage of ZnO.