Construction of advanced observation system for semiconductor defect using scanning positron microbeam and electron beam induced current method

利用扫描电子显微镜(SPM)和电子束感应电流法(EBIC)对同一样品和同一腔室中的Si衬底中的空位缺陷进行了互补研究。在离子注入引入空位缺陷的区域，S参数和EBIC对比度都得到了增强。也就是说，SPM提供了EBIC方法的空间分辨载流子复合中心是否起源于空位缺陷的判据。

A complementary study of vacancy defects in Si substrates by using scanning positron microscope (SPM) and electron beam induced current (EBIC) method were demonstrated for the same samples and in the same chamber. Both the S parameter and EBIC contrast were found to be enhanced in the regions containing vacancy defects introduced by ion implantation. That is, the SPM provides a criterion if the spatially resolved carrier recombination centres by the EBIC method are originating from vacancy defects or not.