Microstructure control of polycrystalline silicon ingot by the vibrating unidirectional solidification method

在氧化铝保护管的下方获得了大的硅晶粒，氧化铝保护管用于对熔融硅施加振动。高凝固速率振动试样在初始凝固区形成大晶粒。当凝固速率提高到20μm/s以上时<211><110>，<100>晶粒尺寸增大，且方向转变为Si的择优生长取向。通过施加振动和控制凝固速度，大的硅晶粒向最终凝固区长大。

Large Si crystal grains were obtained below position of an alumina protective tube which was used to apply vibration to melted Si. The vibrated samples with high-solidification rate formed large crystal grains in initial solidification area. When the solidification rate was increased over 20μm/sec, <211>, <110> and <100> direction turned into preferential growth orientations of Si, and the crystal grains grew larger in initial solidification area. By adding vibration and controlling the solidification rate, large Si crystal grains grew up toward the final solidification area.