Displacive and Conductive Phenomenas in Ferroelectric Thin Films - Scaling effects and switching properties

铁电薄膜中的位移和导电现象 - 缩放效应和开关特性

• 批准号: 5411221
• 负责人: Professor Dr.-Ing. Rainer Waser
• 金额: --
• 依托单位: Arbeitsgruppe Nanoelektronik
• 依托单位国家: 德国
• 项目类别: Research Grants
• 财政年份: 2003
• 资助国家: 德国
• 起止时间: 2002-12-31 至 2005-12-31
• 项目状态: 已结题
• 来源: https://gepris.dfg.de/gepris/projekt/5411221?language=en
• 关键词: Displacive; Conductive; Phenomenas; Ferroelectric; Thin

Polarisation switching of ferroelectric thin films can be influenced by electronic conduction. This joint NSF-DFG proposal will investigate the interactin between switching and conduction, emphasizing the scaling behavior of this interaction. The vertical scaling will be accomplished by ultrathin epitaxial films, which include thicknesses within the tunneling regime. The lateral scaling will be performed by state-of-the-art nanolithography (such as focused ion beam milling and e-beam lithography). The investigation will include correlated conductivity and domain mapping using Scanning Probe Microscopy, dynamic switching studies, piezoelectric characterization, as well as noise measurements and tunneling current studies. The results of this study will contribute to answering the question of the scaling behavior of the coercive voltage, which is crucial for future generations of ferroeletric random access memories.

铁电薄膜的极化转换可以受到电子传导的影响。这个NSF-DFG联合提案将研究开关和传导之间相互作用，强调这种相互作用的标度行为。垂直缩放将通过包括隧穿范围内的厚度的外延膜来实现。横向缩放将通过最先进的纳米光刻（如聚焦离子束铣削和电子束光刻）进行。调查将包括相关的电导率和域映射使用扫描探针显微镜，动态开关研究，压电特性，以及噪声测量和隧道电流的研究。这项研究的结果将有助于回答这个问题的矫顽电压的标度行为，这是至关重要的未来几代的铁电随机存取存储器。