Displacive and Conductive Phenomenas in Ferroelectric Thin Films - Scaling effects and switching properties

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Polarisation switching of ferroelectric thin films can be influenced by electronic conduction. This joint NSF-DFG proposal will investigate the interactin between switching and conduction, emphasizing the scaling behavior of this interaction. The vertical scaling will be accomplished by ultrathin epitaxial films, which include thicknesses within the tunneling regime. The lateral scaling will be performed by state-of-the-art nanolithography (such as focused ion beam milling and e-beam lithography). The investigation will include correlated conductivity and domain mapping using Scanning Probe Microscopy, dynamic switching studies, piezoelectric characterization, as well as noise measurements and tunneling current studies. The results of this study will contribute to answering the question of the scaling behavior of the coercive voltage, which is crucial for future generations of ferroeletric random access memories.